A Ferroelectric Domain-Wall Transistor
A Ferroelectric Domain-Wall Transistor作者机构:State Key Laboratory of ASIC&SystemSchool of MicroelectronicsFudan UniversityShanghai 200433China
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2023年第40卷第3期
页 面:82-86页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:the National Key Basic Research Program of China(Grant No.2019YFA0308500) the National Natural Science Foundation of China(Grant No.61904034)
主 题:drain walls ferroelectric
摘 要:On the basis of novel properties of ferroelectric conducting domain walls,the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density,high-speed and energy-efficient *** in-memory computing,three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently ***,a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O_(3)thin *** the logic function,the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source *** the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations,providing an innovative approach for the development of the domain wall nanoelectronics.