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A Ferroelectric Domain-Wall Transistor

A Ferroelectric Domain-Wall Transistor

作     者:欧阳俊 孙杰 李一鸣 江安全 Yang-Jun Ou;Jie Sun;Yi-Ming Li;An-Quan Jiang

作者机构:State Key Laboratory of ASIC&SystemSchool of MicroelectronicsFudan UniversityShanghai 200433China 

出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))

年 卷 期:2023年第40卷第3期

页      面:82-86页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:the National Key Basic Research Program of China(Grant No.2019YFA0308500) the National Natural Science Foundation of China(Grant No.61904034) 

主  题:drain walls ferroelectric 

摘      要:On the basis of novel properties of ferroelectric conducting domain walls,the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density,high-speed and energy-efficient *** in-memory computing,three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently ***,a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O_(3)thin *** the logic function,the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source *** the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations,providing an innovative approach for the development of the domain wall nanoelectronics.

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