High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

作     者：ZHANG ZhiYong WANG Sheng PENG LianMao 

作者机构：Key Laboratory for the Physics and Chemistry of Nanodevices and Department of ElectronicsPeking UniversityBeijing 100871China 

出 版 物：《Chinese Science Bulletin》 (中国科学通报)

年 卷 期：2012年第57卷第2期

页      面：135-148页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the Ministry of Science and Technology of China (2011CB933001,2011CB933002) the Fundamental Research Funds for Central Universities the National Natural Science Foundation of China (61071013,61001016) 

主　　题：单壁碳纳米管 CMOS器件 集成电路制造 互补金属氧化物半导体 兴奋剂 性能 MOS场效应管 场效应晶体管 

摘      要：Ballistic n-type carbon nanotube(CNT)-based field-effect transistors(FETs) have been fabricated by contacting semiconducting single-walled CNTs(SWCNTs) using Sc or *** n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and *** CNT FETs outperformed n-type Si metal-oxide-semiconductor(MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS *** with the demonstration of ballistic p-type CNT FETs using Pd contacts,this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor(CMOS) devices and integrated *** full advantage of the perfectly symmetric band structure of the semiconductor SWCNT,a perfect SWCNT-based CMOS inverter was demonstrated,which had a voltage gain of over *** adjacent n-and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons(3000 cm2 V-1 s-1) and holes(3300 cm2 V-1 s-1).The CNT FETs also had excellent potential for high-frequency applications,such as a high-performance frequency doubler.