Parylene film for sidewall passivation in SCREAM process

作     者：JI Xu YU HuaiQiang HUANG XianJu LEI YingHua LI ZhiHong 

作者机构：State Key Laboratory of Micro/Nano Fabrication TechnologyInstitute of MicroelectronicsPeking UniversityBeijing 100871China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2009年第52卷第2期

页      面：357-362页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China (Grant No.9060704) National Basic Research Program of China (Grant No.2006AA04Z315) 

主　　题：parylene sidewall passivation stress conformality SCREAM (single crystal reactive etching and metallization) process 

摘      要：Trench sidewall passivation is a key step in the SCREAM (single crystal reactive etching and metallization) process for releasing suspended MEMS structures. In this paper, the parylene thin film is reported to serve as the passivation layer owing to its excellent conformality, chemical inertness, mechanical performance, and especially, low growth temperature. The deposited parylene films are characterized and the test structures are released through SCREAM process utilizing the parylene films as a passivation layer. The results show that as a passivation layer the parylene has more merits than the PECVD SiO2 film.