Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

作     者：Seongjae Kim Juhyung Seo Junhwan Choi Hocheon Yoo Seongjae Kim;Juhyung Seo;Junhwan Choi;Hocheon Yoo

作者机构：Department of Electronic EngineeringGachon University1342 Seongnam-daeroSujeong-guSeongnamGyeonggi-do 13120Republic of Korea Center of Bio-Integrated ElectronicsNorthwestern UniversityEvanstonIL 60208USA Querrey Simpson Institute for BioelectronicsNorthwestern UniversityEvanstonIL 60208USA Present Address:Department of Chemical EngineeringDankook University152 Jukjeon-roSuji-guYonginGyeonggi-do 16890Republic of Korea 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2022年第14卷第12期

页      面：195-223页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by the National Research Foundation of Korea(NRF)grants by the Korean Government(MSIT)(NRF-2021R1A6A3A14038580,NRF-2020R1A2C1101647) This work was supported by the Technology Innovation Program(00144300,Interface Technology of 3D Stacked Heterogeneous System for SCM-based Process-in-Memory)funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea) 

主　　题：Vertical stacking Three-dimensional integration Metal routing Via-hole Two-dimensional semiconductors 

摘      要：Vertical three-dimensional(3D)integration is a highly attractive strategy to integrate a large number of transistor devices per unit *** approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation.A huge number of research efforts have been attempted to demonstrate vertically stacked electronics in the last two *** this review,we revisit materials and devices for the vertically integrated electronics with an emphasis on the emerging semiconductor materials that can be processable by bottom-up fabrication methods,which are suitable for future flexible and wearable *** vertically stacked integrated circuits are reviewed based on the semiconductor materials:organic semiconductors,carbon nanotubes,metal oxide semiconductors,and atomically thin two-dimensional materials including transi-tion metal *** features,device performance,and fabrication methods for 3D integration of the transistor based on each semiconductor are ***,we highlight recent advances that can be important milestones in the vertically integrated elec-tronics including advanced integrated circuits,sensors,and display *** are remaining challenges to overcome;however,we believe that the vertical 3D integration based on emerging semiconductor materials and devices can be a promising strategy for future electronics.