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Electromagnetic Modeling of a Planar Structure Integrating a via-hole Using the Method FWCIP

Open Journal of Antennas and Propagation 2016年第2期4卷 64-84页

作者： Sameh Toumi Sahli Fethi Mejri Taoufik Aguili Syscom Laboratory National Engineering School of Tunis Tunis Tunisia Faculty of Sciences of Bizerte Bizerte Tunisia

We present in this paper a new formulation of the iterative method FWCIP “Fast Wave Concept Iterative Process” based on the wave concept. It calculates the electromagnetic parameters of a planar structure including a via-hole. This is modelled by the electromagnetic field that it creates in the structure. The validation of results found by this new formulation is ensured by comparison with those obtained by HFSS “high frequency structural simulator” software from Ansoft. They show that they are in good agreement.

关键词： Microstrip Line Iterative Method FWCIP Impedance Input Planar Structure via-hole

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Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices

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Nano-Micro Letters 2022年第12期14卷 195-223页

作者： Seongjae Kim Juhyung Seo Junhwan Choi Hocheon Yoo Department of Electronic Engineering Gachon University1342 Seongnam-daeroSujeong-guSeongnamGyeonggi-do 13120Republic of Korea Center of Bio-Integrated Electronics Northwestern UniversityEvanstonIL 60208USA Querrey Simpson Institute for Bioelectronics Northwestern UniversityEvanstonIL 60208USA Present Address:Department of Chemical Engineering Dankook University152 Jukjeon-roSuji-guYonginGyeonggi-do 16890Republic of Korea

Vertical three-dimensional(3D)integration is a highly attractive strategy to integrate a large number of transistor devices per unit *** approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation.A huge number of research efforts have been attempted to demonstrate vertically stacked electronics in the last two *** this review,we revisit materials and devices for the vertically integrated electronics with an emphasis on the emerging semiconductor materials that can be processable by bottom-up fabrication methods,which are suitable for future flexible and wearable *** vertically stacked integrated circuits are reviewed based on the semiconductor materials:organic semiconductors,carbon nanotubes,metal oxide semiconductors,and atomically thin two-dimensional materials including transi-tion metal *** features,device performance,and fabrication methods for 3D integration of the transistor based on each semiconductor are ***,we highlight recent advances that can be important milestones in the vertically integrated elec-tronics including advanced integrated circuits,sensors,and display *** are remaining challenges to overcome;however,we believe that the vertical 3D integration based on emerging semiconductor materials and devices can be a promising strategy for future electronics.

关键词： Vertical stacking Three-dimensional integration Metal routing via-hole Two-dimensional semiconductors

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