A Comprehensive Study on the Theory of Graphene Solution-Gated Field Effect Transistor: Simulations and Experiments

作     者：HU Shihui ZHANG Jizhao WANG Zhongrong JIA Yunfang HU Shihui;ZHANG Jizhao;WANG Zhongrong;JIA Yunfang

作者机构：College of Electron and Information Engineering Hebei University College of Electronic Information and Optical Engineering Nankai University 

出 版 物：《Chinese Journal of Electronics》 (电子学报(英文))

年 卷 期：2022年第31卷第4期

页      面：652-657页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China (61771260) 

主　　题：field effect transistors output drain-source Chemical sensors graphene materials graphene-liquid interface gate-source basic G-SgFETs' electric features graphene numerically calculating method Other field effect devices molecular biophysics liquid-phase exfoliated graphene biosensors Biosensors nanofabrication Electrochemistry and electrophoresis G-SgFETs' model Insulated gate field effect transistors conceived G-SgFETs' biosensors three-terminal equivalent circuit model Fermi level graphene solution-gated field effect transistor equivalent circuits G-SgFET 

摘      要：Graphene solution-gated field effect transistors(G-Sg FETs) have been widely developed in the field of biosensors, but deficiencies in their theories still exist. A theoretical model for G-Sg FET, including the three-terminal equivalent circuit model and the numerically calculating method, is proposed by the comprehensive analyses of the graphene-liquid interface and the FET principle. Not only the applied voltages on the electrodepairs of gate-source and drain-source, but also the nature of graphene and its derivatives are considered by analysing their influences on the Fermi level, the carriers’ concentration and mobility, which may consequently affect the output drain-source current. To verify whether it is available for G-Sg FETs based on different method prepared graphene, three kinds of graphene materials which are liquid-phase exfoliated graphene, reduced graphene oxide(r GO), and tetra(4-aminophenyl) porphyrin hybridized r GO are used as examples. The coincidences of calculated output and transfer feature curves with the measured ones are obtained to confirm its adaptivity for simulating the basic G-Sg FETs’ electric features, by modulating Fermi level and mobility. Furthermore, the model is exploited to simulate G-Sg FETs’ current responding to the biological functionalization with aptamer and the detections for circulating tumor cells, as a *** calculated current changes are compared with the experimental results, to verify the proposed G-Sg FETs’ model is also suitable for mimicking the bio-electronic responding, which may give a preview of some conceived GSg FETs’ biosensors and improve the design efficiency.