Double-balanced mixer based on monolayer graphene fieldeffect transistors

作     者：Min Wu Weida Hong Guanyu Liu Jiejun Zhang Ziao Tian Miao Zhang Min Wu;Weida Hong;Guanyu Liu;Jiejun Zhang;Ziao Tian;Miao Zhang

作者机构：School of MicroelectronicsUniversity of Science and Technology of ChinaHefei 230022China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2022年第43卷第5期

页      面：79-83页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：National Natural Science Foundation of China(Grant Nos.51925208,61974157,61851401,62122082) Key Research Project of Frontier Science,Chinese Academy of Sciences(QYZDB-SSW-JSC021) Strategic Priority Research Program(B)of the Chinese Academy of Sciences(XDB30030000) National Science and Technology Major Project(2016ZX02301003) Science and Technology Innovation Action Plan of Shanghai Science and Technology Committee(20501130700) Science and Technology Commission of Shanghai Municipality(19JC1415500) 

主　　题：GFET mixer RF simulation IIP3 

摘      要：Graphene field-effect transistors(GFET) have attracted much attention in the radio frequency(RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm is fabricated through the van der Walls(vdW) transfer process, and then the existing large-signal GFET model is described, and the model is implemented in Verilog-A for analysis in RF and microwave circuits. Next a double-balanced mixer based on four GFETs is designed and analyzed in advanced design system(ADS) tools. Finally, the simulation results show that with the input of 300 and 280 MHz,the IIP3 of the mixed signal is 24.5 dBm.