H2S Gas Sensor Based on Cu Doped SnO2 Nanostructure

作     者：Gyanendra Prakash Shukla Mukesh Chander Bhatnagar 

作者机构：Thin Film Sensor Lab Physics Department Indian Institute of Technology New Delhi 110016 India 

出 版 物：《材料科学与工程（中英文A版）》 (Journal of Materials Science and Engineering A)

年 卷 期：2014年第4卷第3期

页      面：99-104页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080202[工学-机械电子工程] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0802[工学-机械工程] 

主　　题：SnO2薄膜 气体传感器 纳米结构 铜掺杂 硫化氢 X射线衍射 气体检测 蒸发技术 

摘      要：Sensor based on Cu doped SnO 2 thin films is found most suitable sensor for H 2 S gas detection. As the nanostructures have high surface to volume ratio, they show relatively high selectivity and sensitivity for different gases. In the present work, the nanostructures of 5 wt% and 10 wt% of Cu doped SnO 2 were prepared by thermal evaporation technique. The precursor powder of Cu doped SnO 2 was prepared by sol gel solution method. The structural and surface morphology of nanostructures grown on gold coated silicon substrates were characterized by X-ray diffraction, SEM and EDX technique. The gas response of the sensors at different temperature and at different concentration of H2S and NO2 gases is investigated. The results show high response at room temperature.