Impact of switching frequencies on the TID response of SiC power MOSFETs

作     者：Sheng Yang Xiaowen Liang Jiangwei Cui Qiwen Zheng Jing Sun Mohan Liu Dang Zhang Haonan Feng Xuefeng Yu Chuanfeng Xiang Yudong Li Qi Guo Sheng Yang;Xiaowen Liang;Jiangwei Cui;Qiwen Zheng;Jing Sun;Mohan Liu;Dang Zhang;Haonan Feng;Xuefeng Yu;Chuanfeng Xiang;Yudong Li;Qi Guo

作者机构：Key Laboratory of Functional Materials and Devices for Special EnvironmentsXinjiang Technical Institute of Physics and ChemistryChinese Academy of SciencesUrumqi 830011China Xinjiang Key Laboratory of Electronic Information Material and DeviceUrumqi 830011China University of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2021年第42卷第8期

页      面：73-76页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China under Grant No.11975305 the West Light Foundation of The Chinese Academy of Sciences,Grant No.2017-XBQNXZ-B-008 

主　　题：SiC power MOSFET switching frequency oxide trap total ionizing dose transistor semiconductor theory 

摘      要：Different switching frequencies are required when SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)are switching in a space *** this study,the total ionizing dose(TID)responses of SiC power MOSFETs are investigated under different switching frequencies from 1 kHz to 10 MHz.A significant shift was observed in the threshold voltage as the frequency increased,which resulted in premature failure of the drain-source breakdown voltage and drain-source leakage *** degradation is attributed to the high activation and low recovery rates of traps at high *** results of this study suggest that a targeted TID irradiation test evaluation method can be developed according to the actual switching frequency of SiC power MOSFETs.