Growth of large scale PtTe,PtTe_(2) and PtSe_(2) films on a wide range of substrates

作     者：Kenan Zhang Meng Wang Xue Zhou Yuan Wang Shengchun Shen Ke Deng Huining Peng Jiaheng Li Xubo Lai Liuwan Zhang Yang Wu Wenhui Duan Pu Yu Shuyun Zhou Kenan Zhang;Meng Wang;Xue Zhou;Yuan Wang;Shengchun Shen;Ke Deng;Huining Peng;Jiaheng Li;Xubo Lai;Liuwan Zhang;Yang Wu;Wenhui Duan;Pu Yu;Shuyun Zhou

作者机构：State key Laboratory of Low Dimensional Quantum Physics and Department of PhysicsTsinghua UniversityBeijing100084China Department of Mechanical Engineering and Tsinghua-Foxconn Nanotechnology Research CenterTsinghua UniversityBeijing100084China Collaborative Innovation Center of Quantum MatterBeijing100084China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第6期

页      面：1663-1667页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China(Nos.11725418 and 21975140) the National Key Basic Research Program of China(Nos.2015CB921001,2016YFA0301001 and 2016YFA0301004) Science Challenge Project(No.TZ20164500122) the Basic Science Center Program of NSFC(No.51788104) Beijing Advanced Innovation Center of Future Chip(ICFC)and Tsinghua University Initiative Scientific Research Program 

主　　题：transition metal dichalcogenides(TMDCs) selenization tellurization PtSe2 PtTe2 PtTe 

摘      要：1T phase of transition metal dichalcogenides(TMDCs)formed by group 10 transition metals(***,Pd)have attracted increasing interests due to their novel properties and potential device *** of large scale thin films with controlled phase is critical especially considering that these materials have relatively strong interlayer interaction and are difficult to *** we report the growth of centimeter-scale PtTe,1T-PtTe2 and 1T-PtSe2 films via direct deposition of Pt metals followed by tellurization or *** find that by controlling the Te flux,a hitherto-unexplored PtTe phase can also be obtained,which can be further tuned into PtTe2 by high temperature annealing under Te *** films with different thickness can be grown on a wide range of substrates,including NaCl which can be further dissolved to obtain free-standing PtTe2 or PtSe2 ***,a systematic thickness dependent resistivity and Hall conductivity measurements show that distinguished from the semiconducting PtSe2 with hole carriers,PtTe2 and PtTe films are *** work opens new opportunities for investigating the physical properties and potential applications of group 10 TMDC films and the new monochalcogenide PtTe film.