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Preparation of CuInSe_2 films by ultrasonic electrodeposition-selenization and the improvement of their surface morphology

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Rare Metals 2010年第5期29卷 519-523页

作者： WANG Yanlai NIE Hongbo GUO Shiju Key Laboratory of Semiconductor Photovoltaic Technology at Universities of Inner Mongofia Autonomous Region School of Physical Science and Technology lnnerMongolia University Hohhot 010021 China China National R＆D Center for Tungsten Technology .Yiamen 361006 China School of Materials Science andEngineering University of Science and Technology Belting Beifing 100083 China

The CulnSe2 compound was prepared by selenization of Cu-In precursor, which was ultrasonic electrodeposited at constant current. CulnSe2 films were compacted to improve surface morphology. The films were characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. It is indicated that ideal stoichiometrie CulnSe2 films can be obtained by the selenization of Cu-In precursor deposited at a current density of 20 mA/cm^2. Single-phase CulnSe2 is formed in the selenization proeess, and it exhibits preferred orientation along the （112） plane. The CulnSe2 films with smooth surface can be obtained under the pressure of 500 MPa at 60℃.

关键词： photovoltaic cells CulnSe2 thin films electrodeposition selenization compaction

Using graphene to suppress the selenization of Pt for controllable fabrication of monolayer PtSe2

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Nano Research 2020年第12期13卷 3212-3216页

作者： Zhong-Liu Liu Zhi-Li Zhu Xu Wu Jin-An Shi Wu Zhou Li-Wei Liu Ye-Liang Wang Hong-Jun Gao Institute of Physics and University of Chinese Academy of Sciences Chinese Academy of SciencesBeijing100190China School of Information and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing100081China CAS Center for Excellence in Topological Quantum Computation Beijing100049China

Platinum diselenide(PtSe2)is a promising transition metal dichalcogenide(TMDC)material with unique properties.It is necessary to find a controllable fabrication method to bridge PtSe2 with other two-dimensional(2D)materials for practical applications,which has rarely been reported so far.Here,we report that the selenization of Pt(111)can be suppressed to form a Se intercalated layer,instead of a PtSe2 monolayer,by inducing confined conditions with a precoating of graphene.Experiments with graphene-island samples demonstrate that the monolayer PtSe2 can be controllably fabricated only on the bare Pt surface,while the Se intercalated layer is formed underneath graphene,as verified by atomic-resolution observations with scanning transmission electron microscopy(STEM)and scanning tunneling microscopy(STM).In addition,the orientation of the graphene island shows a negligible influence on the Se intercalated layer induced by the graphene coating.By extending the application of 2D confined reactions,this work provides a new method to control the fabrication and pattern 2D materials during the fabrication process.

关键词： PtSe2 graphene confined reaction selenization intercalation

Realization of semiconducting Cu_(2)Se by direct selenization of Cu(111)

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Chinese Physics B 2021年第11期30卷 112-116页

作者：杨雨沐吴奇龙邓嘉琦王静夏雨富晓帅田麒玮张力殷隆晶田园谢声意张利杰秦志辉 Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China

Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics.However,a layered two-dimensional form of these materials has been rarely reported.Here,we realize semiconducting Cu_(2)Se by direct selenization of Cu(111).Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure.X-ray photoelectron spectroscopy data reveal chemical composition of the sample,which is Cu_(2)Se.The observed moire pattern indicates a lattice mismatch between Cu_(2)Se and the underlying Cu(111)-√3×√3 surface.Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu_(2)Se exhibits a band gap of 0.78 eV.Furthermore,the calculated density of states and band structure demonstrate that the isolated Cu_(2)Se is a semiconductor with an indirect band gap of-0.8 eV,which agrees quite well with the experimental results.Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.

关键词： Cu_(2)Se scanning tunneling microscopy scanning tunneling spectroscopy semiconducting selenization

Effects of silver-doping on properties of Cu(In,Ga)Se_(2) films prepared by Cu In Ga precursors

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Journal of Energy Chemistry 2022年第3期31卷 218-225,I0007页

作者： Chen Wang Daming Zhuang Ming Zhao Yuxian Li Liangzheng Dong Hanpeng Wang Jinquan Wei Qianming Gong School of Materials Science and Engineering Tsinghua UniversityBeijing 100084China Key Lab.for Advanced Materials Processing Technology of Ministry of Education Tsinghua UniversityBeijing 100084China State Key Lab.of New Ceramics and Fine Processing Tsinghua UniversityBeijing 100084China

The AgCuInGa alloy precursors with different Ag concentrations are fabricated by sputtering an Ag target and a CuInGa target.The precursors are selenized in the H_(2)Se-containing atmosphere to prepare(Ag,Cu)(In,Ga)Se_(2)(ACIGS)absorbers.The beneficial effects of Ag doping are demonstrated and their mechanism is explained.It is found that Ag doping significantly improves the films crystallinity.This is believed to be due to the lower melting point of chalcopyrite phase obtained by the Ag doping.This leads to a higher migration ability of the atoms that in turn promotes grain boundary migration and improves the film crystallinity.The Ga enrichment at the interface between the absorber and the back electrode is also alleviated during the selenization annealing.It is found that Ag doping within a specific range can passivate the band tail and improve the quality of the films.Therefore,carrier recombination is reduced and carrier transport is improved.The negative effects of excessive Ag are also demonstrated and their origin is revealed.Because the atomic size of Ag is different from that of Cu,for the Ag/(Ag+Cu)ratio(AAC)≥0.030,lattice distortion is aggravated,and significant micro-strain appears.The atomic radius of Ag is close to those of In and Ga,so that the continued increase in AAC will give rise to the Ag;or Ag;defects.Both the structural and compositional defects degrade the quality of the absorbers and the device performance.An excellent absorber can be obtained at AAC of 0.015.

关键词： CIGS solar cell Ag doping selenization Sputtering Cu-Ag-In-Ga precursor Defects

Access to 3-alkylselenindoles by multicomponent reaction of indoles,selenium powder and unactivated alkyl halides under transition-metal-free conditions

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Chinese Chemical Letters 2022年第9期33卷 4303-4305页

作者： Huan Liu Zhong-Jian Cai Shun-Jun Ji Key Laboratory of Organic Synthesis of Jiangsu Province College of ChemistryChemical Engineering and Materials Science&Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow UniversitySuzhou 215123China

Herein,we reported a convenient and efficient multicomponent reaction of indoles,selenium powder and unactivated alkyl halides.This protocol provides a practical,and facile approach for the synthesis of 3-alkylselenindole derivatives.The advantages of this strategy include mild and transition-metal-free conditions,broad functional group tolerance,the use of simple and easily accessible seleniium powder and alkyl halides as coupling partners.More importantly,the reaction proceeded smoothly with a large scale(>10 g,>90%yield),which further highlighted the potential application of this selenation strategy.

关键词： Selenium 3-Alkylselenindole Indole selenization

Effect of selenization Temperature on The Properties of CuInSe2 Films Prepared by selenization of Metallic Cu-In Alloy Precursors

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Effect of Selenization Temperature on The Properties of CuIn...

Cu(In,Ga)Se2 absorbers prepared by electrodeposition for low-cost thin-film solar cells

第十五届国际光伏科学与工程大会

作者： Fangdan Jiang~1, Jiayou Feng~2 1 Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R.China 2 Corresponding Author, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R.China

In this study, CuInSe films were prepared by selenization of metallic Cu-In alloy precursors, which were deposited on Mo film coated sodalime glass substrates by dc-magnetron sputtering. The effect of selenization temperature on properties of CulnSe films was investigated. The as-deposited Cu-In alloy precursors were consisted of mainly CuIn and elemental In phases. The crystalline structure of selenized CuInSe films at various selenization temperatures was examined by XRD analysis, and it appeared that single phase CuInSe films with random orientation and chalcopyrite structure were prepared in the selenization temperature range of 400-500℃. Furthermore, the reaction pathway of selenization process is demonstrated.

关键词： magnetron sputtering selenization precursor band gap

来源： cnki会议评论

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Rare Metals 2017年第9期36卷 729-736页

作者： Jing-Yu Qu Zheng-Fei Guo Kun Pan Wei-Wei Zhang Xue-Jin Wang College of Science China Agricultural UniversityBeijing 100083China

Reducing the manufacturing cost of solar cells is necessary to their industrial production. Electrodepositing is an effective, non-vacuum method which is very suitable for cutting the manufacturing cost of thin films as well as developing its large-scale industrial production. In this study, about 1-μm-thick Cu（In,Ga）Se2（CIGS） precursors were electrodeposited on Mo/glass substrates in aqueous solution utilizing a three-electrode potentiostatic system.Triethanolamine was used as complexing agent, and all parameters of electrodeposition were precisely controlled.After that, the electrodeposited precursors were selenized in a Se atmosphere with different heating ramp rates（60 and 600℃·min^（-1））. High-quality CIGS films were obtained, and their characteristics were investigated by X-ray fluorescence, scanning electron microscopy, energydispersive spectroscopy, X-ray diffraction, Raman spectra and near-infrared-visible（NIR-Vis） spectra. The results reveal that there are many differences between the properties of the films under different heating rates. Finally,CIGS solar cells were fabricated using a fast and a slow heating rate. The maximum efficiencies achieved for the films selenized at 60 and 600℃-min^（-1） are 3.15% and 0.71%, respectively.

关键词： Cu（In,Ga）Se2 Thin films Electrodeposition selenization Heating rates

Preparation of CuInSe_2 thin films by paste coating

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Rare Metals 2008年第6期27卷 591-597页

作者： NIE Hongbo WANG Yanlai NI Peiran GUO Shiju School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China WuxiASICMicro Electronics Co. Ltd Wuxi 214028 China

Precursor pastes were obtained by milling Cu-In alloys and Se powders. CulnSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The pastes were tested by laser particle diameter analyzer, simultaneous thermogravimetric and differential thermal analysis instruments （TG-DTA）, and X-ray diffractometry （XRD）. Selenized films were characterized by XRD, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicate that chalcopyrite CuInSe2 is formed at 180℃ and the crystallinity of this phase is improved as the temperature rises. All the CuInSe2 thin films, which were annealed at various temperatures, exhibit the preferred orientation along the （112） plane. The compression of precursor layers before selenization step is one of the most essential factors for the preparation of perfect CuInSe2 thin films.

关键词： inorganic non-metal material CulnSe2 thin films selenization coating Cu-In alloys

Preparation of CuInSe_2 thin films by four-step process

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International Journal of Minerals,Metallurgy and Materials 2009年第4期16卷 439-443页

作者： Yan-lai Wang Hong-bo Nie Pei-ran Ni Yi-min Wang Shi-ju Guo School of Materials Science and Technology University of Science and Technology Beijing Beijing 100083 China Wuxi ASIC Micro Electronics Co. Ltd. Wuxi 214028 China

A simple process for the deposition of CulnSe2 thin films was described. The CulnSe2 compound was prepared by selenization of Cu-In alloy precursors, which were electrodeposited at a constant current. The selenized precursors were compacted and then annealed. The films were characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM） and energy dispersive spectroscopy （EDS）. The results indicate that single-phase CulnSe2 is formed at 250℃ and its crystallinity of this phase is improved as the annealing temperature rises. The losses of In occur in selenization process. The dense CulnSe2 film with comparatively smooth surface can be obtained by compaction under the pressure of 200 MPa.

关键词： CulnSe2 electrodeposition selenization compaction