Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate

作     者：吴承龙 杨建红 蔡雪原 单晓锋 

作者机构：Institute of MicroelectronicsSchool of Physical Science and TechnologyLanzhou University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第3期

页      面：50-53页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：pentacene OTFT device optimization Pool-Frenkel mobility simulation 

摘      要：The structure of organic thin film transistors （OTFTs） is optimized by introducing a floating gate into the gate dielectric to reduce the threshold voltage of OTFTs. Then the optimized device is simulated, and the simulation results show that the threshold voltage of optimized device is reduced by about 10 V. The reduction of the threshold voltage is helpful and useful for the application of OTFTs in many areas. In addition, this way of reducing the threshold voltage of OTFT is compatible with traditional silicon technology and can be used in manufacturing.