Conductance of metallic nanoribbons with defects

作     者：邓诗贤 梁世东 

作者机构：State Key Laboratory of Optoelectronic Material and Technology and Guangdong Province Key Laboratory of Display Material and TechnologySchool of Physics and EngineeringSun Yat-Sen UniversityGuangzhou 510275China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第4期

页      面：496-504页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China (Grants Nos. 10774194 and 51072236) the Elite Student Program from National Education Department the Fundamental Research Funds for the Central Universities 

主　　题：conductance graphene nanoribbon defects 

摘      要：The conductances of two typical metallic graphene nanoribbons with one and two defects are studied using the tight binding model with the surface Green＇s function method. The weak scattering impurities, U - 1 eV, induce a dip in the conductance near the Fermi energy for the narrow zigzag graphene nanoribbons. As the impurity scattering strength increases, the conductance behavior at the Fermi energy becomes more complicated and depends on the impurity location, the AA and AB sites. The impurity effect then becomes weak and vanishes with the increase in the width of the zigzag graphene nanoribbons （150 nm）. For the narrow armchair graphene nanoribbons, the conductance at tile Fermi energy is suppressed by the impurities and becomes zero with the increase in impurity scattering strength, U 〉 100 eV, for two impurities at the AA sites, but becomes constant for the two impurities at the AB sites. As the width of the graphene nanoribbons increases, the impurity effect on the conductance at the Fermi energy depends sensitively on the vacancy location at the AA or AB sites.