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Tunable near-infrared light emission from layered TiS_(3) nanoribbons

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Frontiers of physics 2024年第4期19卷 103-111页

作者： Junrong Zhang Cheng Chen Yanming Wang Yang Lu Honghong Li Xingang Hou Yaning Liang Long Fang Du Xiang Kai Zhang Junyong Wang School of nano-tech and nano-bionics University of Science and Technology of ChinaHefei 230026China cas key laboratory of nanophotonic materials and devices&key laboratory of nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Frontier institute of Chip and System Fudan UniversityShanghai 200438China School of materials Science and Engineering Shanghai UniversityShanghai 200444China College of Energy&Power Engineering Inner Mongolia University of TechnologyHohhot 010051China

The low-dimensional light source shows promise in photonic integrated *** layered van der Waals material that exhibits luminescence in the near-infrared optical communication waveband is an essential component in on-chip light ***,the tunable near-infrared photoluminescence(PL)of the air-stable layered titanium trisulfide(TiS3)is *** with iodine particles as a transport agent,TiS3 grown by chemical vapor transport using sulfur powder as a transport agent has fewer sulfur vacancies,which increases the luminescence intensity by an order of *** PL emission wavelength can be regulated in the near-infrared regime by thickness *** addition,we observed an interesting anisotropic strain response of PL in layered TiS3 nanoribbon:a blue shift of PL was achieved when the uniaxial tensile strain was applied along the b-axis,while a negligible shift was observed when the strain was applied along the *** work reveals the tunable nearinfrared luminescent properties of TiS3 nanoribbons,suggesting their potential applications as near-infrared light sources in photonic integrated circuits.

关键词： titanium trisulfide near-infrared luminescence S-vacancy tunability strain engineering

Electron delocalization-enhanced sulfur reduction kinetics on an MXene-derived heterostructured electrocatalyst

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nano Research 2024年第8期17卷 7153-7162页

作者： Yunmeng Li Yinze Zuo Xiang Li Yongzheng Zhang Cheng Ma Xiaomin Cheng Jian Wang Jitong Wang Hongzhen Lin Licheng Ling State key laboratory of Chemical Engineering Key Laboratory of Specially Functional Polymeric Materials and Related Technology(Ministry of Education)East China University of Science and TechnologyShanghai 200237China institute of New Energy materials and Engineering College of Materials Science and EngineeringFuzhou UniversityFuzhou 350108China key laboratory of Specially Functional Polymeric materials and Related technology(Ministry of Education) School of Materials Science and EngineeringEast China University of Science and TechnologyShanghai 200237China i-lab&cas key laboratory of nanophotonic materials and device suzhou institute of nano-tech and nano-bionics Chinese Academy of SciencesSuzhou 215123China Helmholtz institute Ulm(HiU) D89081 UlmGermany

Lithium-sulfur(Li-S)batteries mainly rely on the reversible electrochemical reaction of between lithium ions(Li^(+))and sulfur species to achieve energy storage and conversion,therefore,increasing the number of free Li^(+)and improving the Li^(+)diffusion kinetics will effectively enhance the cell ***,Mo-based MXene heterostructure(MoS_(2)@Mo_(2)C)was developed by partial vulcanization of Mo_(2)C MXene,in which the introduction of similar valence S into Mo-based MXene(Mo_(2)C)can create an electron delocalization *** theoretical simulations and electrochemical characterisation,it is demonstrated that the MoS_(2)@Mo_(2)C heterojunction can effectively promote ion desolvation,increase the amount of free Li^(+),and accelerate Li^(+)transport for more efficient polysulfide *** addition,the MoS_(2)@Mo_(2)C material is also capable of accelerating the oxidation and reduction of polysulfides through its sufficient defects and vacancies to further enhance the catalytic ***,the Li-S battery with the designed MoS_(2)@Mo_(2)C electrocatalyst performed for 500 cycles at 1 C and still maintained the ideal capacity(664.7 mAh·g^(−1)),and excellent rate performance(567.6 mAh·g^(−1)at 5 C).Under the extreme conditions of high loading,the cell maintained an excellent capacity of 775.6 mAh·g^(−1)after 100 *** also retained 838.4 mAh·g^(−1)for 70 cycles at a low temperature of 0℃,and demonstrated a low decay rate(0.063%).These results indicate that the delocalized electrons effectively accelerate the catalytic conversion of lithium polysulfide,which is more practical for enhancing the behaviour of Li-S batteries.

关键词： delocalized electron lithium sulfur batteries MXene-based heterostructures catalytic desolvation multi-catalytic sites

油墨粘度对卷对卷印刷有机光活性层的油墨转移速率和薄膜缺陷的影响机理

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Science China materials 2024年第8期67卷 2600-2610页

作者：刘媛琪王振国潘雅琴刘天宇张亚宾张青莫黎昕骆群马昌期 Beijing Engineering Research Center of Printed Electronics Beijing Institute of Graphic CommunicationBeijing 102600China i-lab&Printable Electronics Research Center Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences(CAS)Suzhou 215123China Vacuum interconnected nanotech Workstation(nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences(CAS)Suzhou 215123China

卷对卷(R2R)凹版印刷具有高的边缘分辨率、可图案化、高加工速度等优势,是制备大面积柔性有机太阳能电池(FOSCs)的一种可行技术.有机光活性层的薄膜质量是决定有机太阳能电池器件性能的关键.对于凹版印刷过程而言,墨水的转移是影响印刷... 详细信息

卷对卷(R2R)凹版印刷具有高的边缘分辨率、可图案化、高加工速度等优势,是制备大面积柔性有机太阳能电池(FOSCs)的一种可行技术.有机光活性层的薄膜质量是决定有机太阳能电池器件性能的关键.对于凹版印刷过程而言,墨水的转移是影响印刷薄膜厚度和质量的关键.本文深入研究了有机光活性层的墨水粘度对墨水转移率和薄膜缺陷的影响.我们开发了紫外可见光谱法,量化凹版印刷过程中墨水的转移率.通过对墨水的流变行为分析、流体动力学模拟和实验验证,深入研究了油墨粘度与油墨转移率、膜厚和膜均匀性之间的关系.结果表明,油墨粘度约为25 m Pa·s是R2R凹版印刷有机光活性层薄膜的适合粘度.通过对油墨配方的优化,我们制备了全R2R印刷FOSCs,其中1 cm^(2);电池的效率超过12%.

关键词：凹版印刷油墨粘度油墨转移率有机太阳能电池油墨配方紫外可见光谱法流体动力学模拟活性层

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Ultrafast laser state active controlling based on anisotropic quasi-1D material

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Light(Science & Applications) 2024年第4期13卷 717-726页

作者： Zixin Yang Qiang Yu Jian Wu Haiqin Deng Yan Zhang Wenchao Wang Tianhao Xian Luyi Huang Junrong Zhang Shuai Yuan Jinyong Leng Li Zhan Zongfu Jiang Junyong Wang Kai Zhang Pu Zhou College of Advanced interdisciplinary Studies National University of Defense TechnologyChangsha 410073China. Nanhu Laser laboratory National University of Defense TechnologyChangsha 410073China. i-lab&key laboratory of nanodevices and Applications&key laboratory of nanophotonic materials and devices Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China. School of Applied and Engineering Physics Cornell UniversityIthacaNY 14853USA. State key laboratory of Advanced Optical Communication Systems and Networks School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China. Shanghai key lab of Modern Optical System University of Shanghai for Science and TechnologyShanghai 200093China

Laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast *** an extension of degree of freedom in optical devices based on low-dimensional materials may be a way ***,the anisotropic quasi-one-dimensional layered material Ta2PdS6 was utilized as a saturable absorber to modulate the nonlinear parameters effectively in an ultrafast system by polarization-dependent *** polarization-sensitive nonlinear optical response facilitates the Ta2PdS6-based mode-lock laser to sustain two types of laser states,i.e.,conventional soliton and noise-like *** laser state was switchable in the single fiber laser with a mechanism revealed by numerical *** coding was further demonstrated in this platform by employing the laser as a codable light *** work proposed an approach for ultrafast laser state active controlling with low-dimensional material,which offers a new avenue for constructing tunable on-fiber devices.

关键词： polarization fiber controlling

Spin transport of half-metal Mn_(2)X_(3) with high Curie temperature:An ideal giant magnetoresistance device from electrical and thermal drives

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Frontiers of physics 2024年第4期19卷 125-135页

作者： Bin Liu Xiaolin Zhang Jingxian Xiong Xiuyang Pang Sheng Liu Zixin Yang Qiang Yu Honggen Li Sicong Zhu Jian Wu Hubei Province key laboratory of Systems Science in Metallurgical Process The State Key Laboratory for Refractories and MetallurgyCollaborative Innovation Center for Advanced SteelsInternational Research Institute for Steel TechnologyWuhan University of Science and TechnologyWuhan 430081China key laboratory of Artificial Micro-and nano-structures of Ministry of Education and School of Physical and technology Wuhan UniversityWuhan 430072China College of Advanced interdisciplinary Studies Nanhu Laser LaboratoryNational University of Defense TechnologyChangsha 410073China Department of Mechanical Engineering National University of SingaporeSingapore 117575Singapore i-lab&key laboratory of nanodevices and Applications&key laboratory of nanophotonic materials and devices Suzhou Institute of Nano-Tech and NanoBionicsChinese Academy of SciencesSuzhou 215123China institute of Optical Science and technology School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China

Currently,magnetic storage devices are encountering the problem of achieving lightweight and high integration in mobile computing devices during the information *** a result,there is a growing urgency for twodimensional half-metallic materials with a high Curie temperature(TC).This study presents a theoretical investigation of the fundamental electromagnetic properties of the monolayer hexagonal lattice of Mn_(2)X_(3)(X=S,Se,Te).Additionally,the potential application of Mn_(2)X_(3) as magneto-resistive components is *** three of them fall into the category of ferromagnetic *** particular,the Monte Carlo simulations indicate that the TC of Mn2S3 reachs 381 K,noticeably greater than room *** findings present notable advantages for the application of Mn2S3 in spintronic ***,a prominent spin filtering effect is apparent when employing non-equilibrium Green’s function simulations to examine the transport *** resulting current magnitude is approximately 2×10^(4) nA,while the peak gigantic magnetoresistance exhibits a substantial value of 8.36×10^(16)%.it is noteworthy that the device demonstrates a substantial spin Seebeck effect when the temperature differential between the electrodes is *** brief,Mn_(2)X_(3) exhibits outstanding features as a highTC half-metal,exhibiting exceptional capabilities in electrical and thermal drives spin ***,it holds great potential for usage in spintronics applications.

关键词： half-metals Mn_(2)X_(3) high Curie temperature electrical and thermal GMR

Two-dimensional materials for future information technology: status and prospects

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Science China(information Sciences) 2024年第6期67卷 1-147页

作者： Hao QiU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng Li Taotao Li Wenzhong BAO Yang CHAi Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAi Zengfeng Di Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali iMRAN Ziqiang KONG Jia Li Qian Li Weisheng Li Lei LiAO Bilu LiU Can LiU Chunsen LiU Guanyu LiU Kaihui LiU Liwei LiU Sheng LiU Yuan LiU Donglin LU Likuan MA Feng MiAO Zhenhua Ni Jing NiNG Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TiAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State key laboratory of infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and key lab of Quantum materials and devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University suzhou laboratory State key laboratory of integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied Physics The Hong Kong Polytechnic University key laboratory for Micro-nano Physics and technology of Hunan Province College of Materials Science and EngineeringHunan University College of integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State key laboratory of Extreme Photonics and instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National key laboratory of materials for integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences cas key laboratory of nanophotonic materials and devices & key laboratory of nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of Ai in material growth, characterizations, and circuit design will be essential. it is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

Enhanced charge collection of AgNWs-based top electrode to realize high-performance,all-solution processed organic solar cells

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Science China Chemistry 2024年第10期67卷 3347-3356页

作者： Juanyong Wan Yang Chen Weijie Chen Jinfeng Xia Guang Zeng Jianlei Cao Chuang Jin Yunxiu Shen Xiaoxiao Wu Haiyang Chen Junyuan Ding Xue-mei Ou Yaowen Li Yongfang Li laboratory of Advanced Optoelectronic materials Suzhou Key Laboratory of Novel Semiconductor-Optoelectronics Materials and DevicesCollege of ChemistryChemical Engineering and Materials ScienceSoochow UniversitySuzhou 215123China Jiangsu key laboratory of Advanced Negative Carbon technologies Soochow UniversitySuzhou 215123China State and Local Joint Engineering laboratory for Novel Functional Polymeric materials Jiangsu Key Laboratory of Advanced Functional Polymer Design and ApplicationCollege of ChemistryChemical Engineering and Materials ScienceSoochow UniversitySuzhou 215123China Beijing National laboratory for Molecular Sciences CAS Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China Jiangsu Sidike New materials Science and technology Co. Ltd.Suqian 215400China

All-solution processed organic solar cells are the ultimate aim of printable photovoltaics,but their electrical losses arising from poor contact of top electrodes greatly limit efficiency *** solve the problem,a solution-processed hybrid top electrode was constructed using silver nanowires(AgNWs)as the skeleton and ZnO nanoparticles(ZnO-NPs)as the *** constructing the skeleton,a spin-rinsing treatment was first used to reduce the amount of the residual insulating polyvinylpyrrolidone wrapped around the AgNWs to promote intimate contact among the AgNWs in the ***,the ZnO-NPs matrix was deposited onto the AgNWs skeleton,bridging the AgNWs skeleton with the underlayer ZnO-NPs electron transporting layer(ETL).The underlayer ZnO-NPs ETL can also induce the growth of the ZnO-NPs matrix to minimize lattice mismatch,which creates additional transport channels from the ETL to the AgNWs skeleton for charge *** a result,the obtained electrode significantly enhances the electrical contact in the device,thus delivering record power conversion efficiencies of 16.04%and 14.54%for rigid and flexible all-solution processed OSCs,respectively.

关键词： solution-processed top electrode organic solar cells AgNWs electrical contact

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Phase-stable wide-bandgap perovskites enabled by suppressed ion migration

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Journal of Energy Chemistry 2024年第9期96卷 120-128页

作者： Zhiyu Gao Yu Zhu Jingwei Zhu Cong Chen Zongjin Yi Yi Luo Yuliang Xu Kai Wu Tianshu Ma Fangfang Cao Zijun Chen Fang Yao Juncheng Wang Wenwu Wang Chuanxiao Xiao Hao Huang Hongxiang Li Qianqian Lin Pei Cheng Changlei Wang Xia Hao Guanggen Zeng Dewei Zhao College of materials Science and Engineering&institute of New Energy and Low-Carbon technology&Engineering Research Center of Alternative Energy materials and devices Ministry of EducationSichuan UniversityChengdu 610065SichuanChina School of Optoelectronic Science and Engineering&Collaborative innovation Center of suzhou nano Science and technology Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province&Key Lab of Modern Optical Technologies of Education Ministry of ChinaSoochow UniversitySuzhou 215006JiangsuChina Ningbo institute of materials technology and Engineering Chinese Academy of SciencesNingbo 315201ZhejiangChina Ningbo New materials Testing and Evaluation Center Co.Ltd Ningbo 315201ZhejiangChina State key laboratory of Featured Metal materials and Life-cycle Safety for Composite Structure&School of Resources Environment and MaterialsGuangxi UniversityNanning 530004GuangxiChina key lab of Artificial Micro-and nano-Structures of Ministry of Education of China School of Physics and TechnologyWuhan UniversityWuhan 430072HubeiChina College of Polymer Science and Engineering State Key Laboratory of Polymer Materials EngineeringSichuan UniversityChengdu 610065SichuanChina

Wide-bandgap(>1.7 eV)perovskites suffer from severe light-induced phase segregation due to high bromine content,causing irreversible damage to devices ***,the strategies of suppressing photoinduced phase segregation and related mechanisms have not been fully ***,we report a new passivation agent 4-aminotetrahydrothiopyran hydrochloride(4-ATpHCl)with multifunctional groups for the interface treatment of a 1.77-eV wide-bandgap perovskite film.4-ATpH^(+)impeded halogen ion migration by anchoring on the perovskite surface,leading to the inhibition of phase segregation and thus the passivation of defects,which is ascribed to the interaction of 4-ATpH^(+)with perovskite and the formation of low-dimensional ***,the champion device achieved an efficiency of 19.32%with an open-circuit voltage(V_(OC))of 1.314 V and a fill factor of 83.32%.Moreover,4-ATpHCl modified device exhibited significant improved stability as compared with control *** target device maintained 80%of its initial efficiency after 519 h of maximum power output(MPP)tracking under 1 sun illumination,however,the control device showed a rapid decrease in efficiency after 267 ***,an efficiency of 27.38%of the champion 4-terminal all-perovskite tandem solar cell was achieved by mechanically stacking this wide-bandgap top subcell with a 1.25-eV low-bandgap perovskite bottom subcell.

关键词： Wide-bandgap perovskite Phase segregation lon migration interface post-treatment All-perovskite tandems

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Growth of uniformly doped black phosphorus films through versatile atomic substitution

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Science China(information Sciences) 2023年第6期66卷 78-86页

作者： Cheng CHEN Yang LU Chang Li Xingang HOU Yongjie WANG Junrong ZHANG Junyong WANG Kai ZHANG School of nano-tech and nano-bionics University of Science and Technology of China cas key laboratory of nanophotonic materials and devices & key laboratory of nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences nano Science and technology institute University of Science and Technology of China

For the emerging excellent two-dimensional semiconductor black phosphorus(BP), doping has been proven as an effective way to tune its intrinsic properties. For the further development and expansion of BP-based research and application, the direct growth of doped BP films is highly desirable but still remains a challenge. in this work, the direct growth of uniformly doped-BP films on silicon substrates is achieved by a simple one-step vapor growth. The proposed decoupled feeding strategy significantly improves the effectiveness of doping and enables uniform dopant distribution in the grown films. The substitutional doping nature and high crystal quality of the grown doped films are confirmed by microscopy and crystal structural determination. Electrical transport measurement results reveal that Se and Te dopants perform mild electron doping effect and enable improve the electron mobility relative to pristine BP, while As dopant performs mild hole doping effect. it is believed that the direct growth of doped BP films in this work will facilitate the research development of BP in electronics and optoelectronics.

关键词： black phosphorus dope vapor growth thin film two-dimensional materials