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Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures

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Journal of semiconductors 2024年第9期45卷 7-27页

作者： Bo Cao Ye Tian Huan Fei Wen Hao Guo xiaoyu Wu Liangjie Li Zhenrong Zhang Lai Liu Qiang Zhu Jun Tang Jun Liu State Key Laboratory of Dynamic Measurement Technology School of Semiconductors and PhysicsNorth University of ChinaTaiyuan 030051China Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement North University of ChinaTaiyuan 030051China School of Instrument Science and Technology Xi'an Jiaotong UniversityXi'an 710049China

One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons,nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.

关键词： Sn-doped CdS micro-nano structure superlattices optical microcavity

A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver with 1/4 rate reconfigurable 4-tap FFE and half-rate slicer in a 28-nm CMOS

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Journal of semiconductors 2024年第6期45卷 35-46页

作者： Yukun He Zhao Yuan Kanan Wang Renjie Tang Yunxiang He xian Chen Zhengyang Ye xiaoyan Gui School of Microelectronics Xi’an Jiaotong UniversityXi’an 710049China

A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver(TRx)designed in a 28-nm complementary metal-oxide-semiconduc-tor(CMOS)process is presented in this article.A voltage-mode(VM)driver featuring a 4-tap reconfigurable feed-forward equal-izer(FFE)is employed in the quarter-rate transmitter(TX).The half-rate receiver(RX)incorporates a continuous-time linear equal-izer(CTLE),a 3-stage high-speed slicer with multi-clock-phase sampling,and a clock and data recovery(CDR).The experimen-tal results show that the TRx operates at a maximum speed of 56 Gb/s with chip-on board(COB)*** 28 Gb/s NRZ eye diagram shows a far-end vertical eye opening of 210 mV with an output amplitude of 351 mV single-ended and the 56 Gb/s PAM-4 eye diagram exhibits far-end eye opening of 33 mV(upper-eye),31 mV(mid-eye),and 28 mV(lower-eye)with an output amplitude of 353 mV *** recovered 14 GHz clock from the RX exhibits random jitter(RJ)of 469 fs and deterministic jitter(DJ)of 8.76 *** 875 Mb/s de-multiplexed data features 593 ps horizontal eye opening with 32.02 ps RJ,at bit-error rate(BER)of 10-5(0.53 UI).The power dissipation of TX and RX are 125 and 181.4 mW,respectively,from a 0.9-V sup-ply.

关键词： transceiver(TRx) feed-forward equalizer(FFE) clock and data recovery(CDR) continuous time linear equalizer(CTLE)

Preface to Special Topic on Integrated Circuits, Technologies and Applications

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Journal of semiconductors 2024年第6期45卷 1-2页

作者： Zheng Wang xiaoyan Gui Lin Cheng Nanjian Wu School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of ChinaChengdu 611731China School of Microelectronics Xi’an Jiaotong UniversityXi’an 710049China School of Microelectronics University of Science and Technology of ChinaHefei 230026China Institute of semiconductors Chinese Academy of SciencesBeijing 100083China

This Special Topic of the Journal of semiconductors(JoS)features expanded versions of key articles presented at the 2023 IEEE International Conference on Integrated Circuits Technologies and Applications(ICTA),which was held in Hefei,Anhui,China,from October 27 to 29,*** ICTA is an IEEE flagship conference in the field of integrated circuits(IC)in China,which provides a communication platform for sharing the state-of-the-art techniques from experts in the field of *** the 93 papers presented at ICTA 2023,the Technical Program Committee and the Award Committee have selected 4 high-quality articles to recommend to the Special Topic of JoS,covering a wide range of technical fields,including one paper on RF ICs,two papers on Analog ICs and one paper on Wireline ICs.

关键词： communication ICT Anhui

A 16-bit 18-MSPS flash-assisted SAR ADC with hybrid synchronous and asynchronous control logic

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Journal of semiconductors 2024年第6期45卷 3-12页

作者： Junyao Ji xinao Ji Ziyu Zhou Zhichao Dai Xuhui Chen Jie Zhang Zheng Jiang Hong Zhang School of Microelectronics Xi'an Jiaotong UniversityXi'an 710049China Qingdao Hi-image Tech.Co.Ltd. Qingdao 266100China

This paper presents a 16-bit,18-MSPS(million samples per second)flash-assisted successive-approximation-register(SAR)analog-to-digital converter(ADC)utilizing hybrid synchronous and asynchronous(HYSAS)timing control logic based on an on-chip delay-locked loop(DLL).The HYSAS scheme can provide a longer settling time for the capacitive digital-to-analog converter(CDAC)than the synchronous and asynchronous SAR ***,the issue of incomplete settling or ringing in the DAC voltage for cases of either on-chip or off-chip reference voltage can be solved to a large *** addition,the fore-ground calibration of the CDAC’s mismatch is performed with a finite-impulse-response bandpass filter(FIR-BPF)based least-mean-square(LMS)algorithm in an off-chip FPGA(field programmable gate array).Fabricated in 40-nm CMOS process,the proto-type ADC achieves 94.02-dB spurious-free dynamic range(SFDR),and 75.98-dB signal-to-noise-and-distortion ratio(SNDR)for a 2.88-MHz input under 18-MSPS sampling rate.

关键词： SAR ADC control logic reference ringing DAC incomplete settling

Step-edge-guided nucleation and growth mode transition of α-Ga_(2)O_(3) heteroepitaxy on vicinal sapphire

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Chinese Physics B 2024年第8期33卷 397-403页

作者：郝景刚张彦芳张贻俊徐科韩根全叶建东 Test&Analysis Platform Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Electronic Science and Engineering Nanjing UniversityNanjing 210023China Wuxi Institute of Technology Wuxi 214121China School of Microelectronics Xidian UniversityXi'an 710071China Suzhou National Laboratory for Materials Science Jiangsu Institute of Advanced SemiconductorsSuzhou 215123China

Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device *** this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by tuning miscut angles(θ)from 0°to 7°off the(1010)direction of sapphire(0002)*** flat sapphire surfaces,the growth undergoes a typical three-dimensional(3D)growth mode due to the random nucleation on wide substrate terraces,as evidenced by the hillock morphology and high dislocation *** the miscut angle increases toθ=5°,the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei,and consequently,the nucleation is guided by terrace edges,which energetically facilitates the growth mode transition into the desirable two-dimensional(2D)coherent ***,the mean surface roughness decreases to only 0.62 nm,accompanied by a significant reduction in screw and edge dislocations to 0.16×10^(7) cm^(-2)and 3.58×10^(9) cm^(-2),***,the further increment of miscut angles toθ=7°shrink the terrace width less than nucleation distance,and the step-bunching growth mode is *** this circumstance,the misfit strain is released in the initial growth stage,resulting in surface morphology degradation and increased dislocation densities.

关键词： growth mode miscut angle crystalline quality surface morphology

Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

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Journal of semiconductors 2024年第5期45卷 90-98页

作者： Haifeng Chen xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device

10 × 10 Ga_(2)O_(3)-based solar-blind UV detector array and imaging characteristic

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Journal of semiconductors 2024年第9期45卷 61-69页

作者： Haifeng Chen Zhanhang Liu Yixin Zhang Feilong Jia Chenlu Wu Qin Lu xiangtai Liu Shaoqing Wang Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecom-municationsXi’an 710121China

A 10 × 10 solar-blind ultraviolet(UV) imaging array with double-layer wire structure was prepared based on Ga_(2)O_(3) film grown by atomic layer deposition. These single detection units in the array exhibit excellent performance at 3 V: photo-todark current ratio(PDCR) of 5.5 × 10^(5), responsivity(R) of 4.28 A/W, external quantum efficiency(EQE) of 2.1 × 10^(3)%, detectivity(D*) of 1.5 × 10^(14) Jones, and fast response time. The photodetector array shows high uniformity under different light intensity and low operating bias. The array also has good temperature stability. Under 300 ℃, it still presents clear imaging and keeps high R of 34.4 and 6.45 A/W at 5 and 1 V, respectively. This work provides a new insight for the large-scale array of Ga_(2)O_(3) solarblind UV detectors.

关键词： Ga_(2)O_(3) solar-blind ultraviolet photodetector array photo-to-dark current ratio

Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors

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Journal of semiconductors 2024年第10期45卷 1-2页

作者： Youla Yang Daixuan Wu He Tian Tian-Ling Ren School of Integrated Circuit Tsinghua UniversityBeijing 100083China School of Instrument Science and Technology Xi'an Jiaotong UniversityXi'an 710049China

In recent years,there has been a significant increase in research focused on the growth of large-area single *** et al.[1]recently achieved the growth of large-area monolayers of transition-metal chalcogenides through assisted *** quality of molecular beam epitaxy(MBE)-grown two-dimensional(2D)materials can be greatly enhanced by using sacrificial species deposited simultaneously from an electron beam evaporator during the growth *** technique notably boosts the nucleation rate of the target epitaxial layer,resulting in large,homogeneous monolayers with improved quasiparticle lifetimes and fostering the development of epitaxial van der Waals ***,micrometer-sized silver films have been formed at the air-water interface by directly depositing electrospray-generated silver ions onto an aqueous dispersion of reduced graphene oxide under ambient conditions[2].

关键词： silver epitaxial dimensional

Machine learning-assisted smart epitaxy ofⅢ-Ⅴsemiconductors

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Science China Materials 2024年第9期67卷 3041-3042页

作者： Yue Hao Key Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an710071China

Semiconductor epitaxial growth is the front-end process for manufacturing microelectronic and optoelectronic *** beam epitaxy(MBE),capable of precisely controlling atomic layer deposition,has emerged as a crucial technique in chip atomic-level manufacturing[1].However,in semiconductor epitaxy,the heterogeneous nature of materials is complicated,and the growth condition fluctuations poses significant challenges in defect suppression[2],substantially impacting chip performance and yield.

关键词： optoelectronic smart semiconductors