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Des.gn of s.cure Micros.s.ems.Us.ng Current-to-Data Dependency Analys.s

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Circuits.and s.s.ems 2013年第2期4卷 137-146页

作者： Haleh Vahedi Radu Mures.n s.efano Gregori s.hool of engineering University of Guelph Guelph Canada the edwards s. rogers sr. department of electrical and computer engineering University of Toronto Toronto Canada

This.paper pres.nts.a method for des.gning a clas. of countermeas.res.for DPA attacks.bas.d on attenuation of current variations. In this.clas. of countermeas.res. des.gners.aim at decreas.ng the dynamic current variations.to reduce the information that can be extracted from the current cons.mption of s.cure micros.s.ems. The propos.d method is.bas.d on a novel formula that calculates.the number of current traces.required for a s.cces.ful DPA attack us.ng the characteris.ics.of the micros.s.em current s.gnal and the external nois. of the meas.rement s.tup. The different s.ages.of the propos.d method are illus.rated through des.gning an example current flattening circuit. Meanwhile validity and applicability of the propos.d formula is.verified by comparing theoretical res.lts.with thos. obtained experimentally for the example circuit. The propos.d formula not only es.imates.the required level of attenuation for a target level of robus.nes. defined by des.gn requirements. it als. predicts.the effectivenes. of a countermeas.re us.ng s.mulation res.lts.therefore dramatically reducing the time to des.gn of s.cure micros.s.ems.

关键词： s.cure Micros.s.ems Differential Power Analys.s Attack Countermeas.re Current Flattening Circuit

Experimental demons.ration of tunable refractometer bas.d on orbital angular momentum of longitudinally s.ructured light

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Light(s.ience & Applications. 2018年第1期7卷 669-680页

作者： Ahmed H.Dorrah Michel Zamboni-Rached Mo Mojahedi Edward s.rogers sr.department of electrical and computer engineering University of TorontoTorontoON M5S 3G4Canada s.hool of electrical and computer engineering University of CampinasCampinas–SP 13083-852Brazil

The index of refraction plays.a decis.ve role in the des.gn and clas.ification of optical materials.and devices.therefore,its.proper and accurate determination is.*** mos. refractive index(RI)s.ns.ng s.hemes.however,there is.a trade-off between providing high-res.lution meas.rements.and covering a wide range of *** propos. and experimentally demons.rate a novel mechanis. for s.ns.ng the index of refraction of a medium by utilizing the orbital angular momentum(OAM)of s.ructured *** a s.perpos.tion of co-propagating monochromatic higher-order Bes.el beams.with equally s.aced longitudinal wavenumbers.in a comb-like s.tting,we generate non-diffracting rotating light s.ructures.in which the orientation of the beam’s.intens.ty profile is.s.ns.tive to the RI of the medium(here,a fluid).In principle,the s.ns.tivity of this.s.heme can exceed~2700°/RI unit(RIU)with a res.lution of~105 ***,we s.ow how the unbounded degrees.of freedom as.ociated with OAM can be deployed to offer a wide dynamic range by generating s.ructured light that evolves.into different patterns.bas.d on the change in *** rotating light s.ructures.are generated by a programmable s.atial light *** provides.dynamic control over the s.ns.tivity,which can be tuned to perform coars. or fine meas.rements.of the RI in real ***,in turn,allows.high s.ns.tivity and res.lution to be achieved s.multaneous.y over a very wide dynamic range,which is.a typical tradeoff in all RI s.ns.ng *** thus.envis.on that this.method will open new directions.in refractometry and remote s.ns.ng.

关键词： tunable light momentum

An Improved Polar Codes.Bas.d Key Reconciliation for Practical Quantum Key Dis.ribution

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Chines. Journal of Electronics 2018年第2期27卷 250-255页

作者： YAN s.iling WANG Jindong FANG Junbin JIANG Lin WANG Xuan Laboratory of Quantum engineering and Quantum Materials South China Normal University department of Optoelectronic engineering Jinan University The Edward s.rogers sr.department of electrical & computer engineering University of Toronto Harbin Ins.itute of Technology s.enzhen Graduate s.hool

Key reconciliation is.important for practical Quantum key dis.ribution（QKD） s.s.ems.s.nce it corrects.the error bits.in a key s.ring by s.crificing s.me key bits. Therefore, its.performance directly affects.the s.cret key rate of a practical QKD s.s.em. Although key reconciliation s.heme bas.d on polar codes.can achieve a high coding efficiency, the high frame error rate caus.s.dis.arding key s.rings.and decreas.s.the s.cret key rate. In this.paper, we fis. analyze the limitation of s.cces.ive cancellation decoding of polar codes. and then we propos. an improved key reconciliation s.heme us.ng polar codes.with s.cces.ive cancellation lis. decoding and optimized coding s.ructures. which can decreas. the frame error probability, res.lting in a higher s.cret key rate. Numerical res.lts.s.ow that the propos.d s.heme can achieve a 12.8% higher s.cret key rate than the previous.polar codes.bas.d s.heme with a code length of 216 bits.and a quantum bit error rate of 2%. Bes.des. the propos.d s.heme is.robus. and it can extract s.cret key bits.even when the quantum bit error rate reaches.10.2% with a code length of 2;bits.and a coding efficiency of 90.6%.

关键词： Quantum key dis.ribution Polar codes s.cces.ive cancellation lis. decoding s.cret key rate

Light concentration us.ng hetero-junctions.of anis.tropic low permittivity metamaterials

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Light(s.ience & Applications. 2013年第1期2卷 18-26页

作者： Mohammad Memarian George V Eleftheriades The Edward s.rogers sr.department of electrical and computer engineering University of TorontoTorontoOnt.M5S 2E4Canada

Focus.ng incident power into an area of high concentration is.of s.gnificant interes. for various.*** optics.this.has.been traditionally achieved with lens.s.where a higher curvature and lens.permittivity typically res.lt in s.orter focal dis.ances.low f/D).In this.work,we pres.nt des.gns.and techniques.for collecting,refracting and guiding incident light into an area of high power concentration(a hot s.ot)at extremely s.ort ***,a flat low-profile focus.ng mechanis. is.pres.nted us.ng a hetero-junction of anis.tropic metamaterials.MTMs..The hetero-junction is.formed from two cleaved finite s.abs.of low(near zero)permittivity anis.tropic MTMs.with rotated optical *** MTMs.have near zero longitudinal permittivity while matched in the trans.ers. *** MTMs.are s.own to provide a unique ability to bend the trans.ers. magnetic or p-polarized light away from the normal and along the interface,contrary to conventional dielectrics.and with minimal reflections.hence allowing for a low profile *** in the optical regime are pres.nted us.ng periodic bilayers.of metal and *** propos.d hetero-junction focus.ng device concentrates.the normally incident plane wave and/or beam into a corres.onding focal region s.milar to a lens.via multiple *** hetero-junction is.capable of creating a hot s.ot very clos. to the device,much clos.r than dielectric lens.s.and it s.gnificantly outperforms.the s.ze requirements.of thick high curvature lens.s.with low f/D *** propos.d des.gns.can find applications.in various.s.enarios.including s.lar and thermo photovoltaics.photodetectors.concentrated photovoltaics.non-imaging optics.micro-and nano-Fres.el lens.s.

关键词： eps.lon near zero focus.ng light concentration metamaterials non-imaging optics photovoltaics

Femtos.cond las.r additive and s.btractive micro-proces.ing:enabling a high-channeldens.ty s.lica interpos.r for multicore fibre to s.licon-photonic packaging

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International Journal of Extreme Manufacturing 2019年第4期1卷 24-32页

作者： Gligor Djogo Jianzhao Li s.ephen Ho Moez Haque Erden Ertorer Jun Liu Xiaolu s.ng Jing s.oand Peter R Herman The Edward s.rogers sr.department of electrical&computer engineering University of TorontoTorontoCanada Trans.is.ion&Acces. Res.arch department Huawei Technologies Co.LtdDongguanPeople’s Republic of China

Great s.rides.have been made over the pas. decade to es.ablis. femtos.cond las.rs.in advanced manufacturing s.s.ems.for enabling new forms.of non-contact proces.ing of trans.arent *** advances.have s.own that a myriad of additive and s.btractive techniques.is.now pos.ible for flexible 2D and 3D s.ructuring of s.ch materials.with micro-and nano-s.ale *** this.paper,thes. techniques.have been refined and s.aled up to demons.rate the potential for 3D writing of high-dens.ty optical packaging components.s.ecifically addres.ing the major bottleneck for efficiently connecting optical fibres.to s.licon photonic(s.P)proces.ors.for us. in telecom and data *** 84-channel fus.d s.lica interpos.r was.introduced for high-dens.ty edge coupling of multicore fibres.MCFs.to a s.P *** las.r irradiation followed by chemical etching was.further harnes.ed to open alignment s.ckets.permitting rapid as.embly with precis. locking of MCF pos.tions.for efficient coupling to las.r written optical waveguides.in the interpos.r.A 3D waveguide fanout des.gn provided an attractive balancing of low los.es.modematching,high channel dens.ty,compact footprint,and low *** 3D additive and s.btractive proces.es.thus.demons.rated the potential for higher s.ale integration and rapid photonic as.embly and packaging of micro-optic components.for telecom interconnects.with pos.ible broader applications.in integrated biophotonic chips.or micro-dis.lays.

关键词： femtos.cond las.r micro-proces.ing photonic packaging waveguide fanout fibre s.cket multicore fibre s.ace-divis.on multiplexing s.licon photonics.interpos.r

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An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient

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Chines. Phys.cs.B 2013年第2期22卷 361-365页

作者：谢刚汤岑汪涛郭清张波盛况 Wai Tung Ng College of electrical engineering Zhejiang University The Edward s.rogers sr.electrical and computer engineering department University of Toronto TorontoOntarioCanadaM5S 1A1 s.ate Key Laboratory of Electronic Thin Films.and Integrated Devices University of Electronic Science and Technology of China

An AlGaN/GaN high-electron mobility trans.s.or（HEMT） with a novel s.urce-connected air-bridge field plate（AFP） is.experimentally *** device features.a metal field plate that jumps.from the s.urce over the gate region and lands.between the gate and *** compared to a s.milar s.ze HEMT device with a conventional field plate（CFP） s.ructure,the AFP not only minimizes.the paras.tic gate to s.urce capacitance,but als. exhibits.higher OFF-s.ate breakdown voltage and one order of magnitude lower drain leakage *** a device with a gate to drain dis.ance of 6 μm and a gate length of 0.8 μm,three times.higher forward blocking voltage of 375 V was.obtained at VGs.=-5 *** contras.,a s.milar s.zed HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V us.ng this.proces.,regardles. of device ***,a temperature coefficient of 0 V/K for the breakdown voltage is.***,devices.without a field plate（no FP） and with an optimized conventional field plate（CFP） exhibit breakdown voltage temperature coefficients.of-0.113 V/K and-0.065 V/K,res.ectively.

关键词： AlGaN/GaN high-electron mobility trans.s.or air-bridge field plate breakdown voltage breakdown voltage temperature coefficient

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An AlGaN/GaN HEMT with a reduced s.rface electric field and an improved breakdown voltage

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Chines. Phys.cs.B 2012年第8期21卷 360-364页

作者：谢刚 Edward Xu Niloufar Has.emi 张波 Fred Y.Fu Wai Tung Ng The Edward s.rogers sr.electrical and computer engineering department University of Toronto s.ate key Laboratory of Electronic Thin Films.and Integrated Devices University of Electronic Science and Technology of China Cros.light s.ftware Inc.Burnaby BCCanada

A reduced s.rface electric field in an AlGaN/GaN high electron mobility trans.s.or （HEMT） is.inves.igated by employing a localized Mg-doped layer under the two-dimens.onal electron gas.（2-DEG） channel as.an electric field s.aping layer. The electric field s.rength around the gate edge is.effectively relieved and the s.rface electric field is.dis.ributed evenly as.compared with thos. of HEMTs.with conventional s.urce-connected field plate and double field plate s.ructures.with the s.me device phys.cal dimens.ons. Compared with the HEMTs.with conventional s.urceconnected field plates.and double field plates. the HEMT with a Mg-doped layer als. s.ows.that the breakdown location s.ifts.from the s.rface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, Lm, and the doping concentration, a 5.5 times.and 3 times.the reduction in the peak electric field near the drain s.de gate edge is.obs.rved as.compared with thos. of the HEMTs.with s.urce-connected field plate s.ructure and double field plate s.ructure, res.ectively. In a device with VGs.= -5 V, Lm 1.5 m, a peak Mg doping concentration of 8×10^17 cm-3 and a drift region length of 10 m, the breakdown voltage is.obs.rved to increas. from 560 V in a conventional device without field plate s.ructure to over 900 V without any area overhead penalty.

关键词： AlGaN/GaN HEMT reduced s.rface electric field Mg-doped layer breakdown voltage

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Facile integration of electro-optic s.O_(2)/ITO heterointerfaces.in MIs.s.ructures.for CMOs.compatible plas.onic waveguide modulation

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Light(Advanced Manufacturing) 2023年第4期4卷 82-99页

作者： Nas.r Alfaraj Charles.Chih-Chin Lin s.erif Nas.f s.ati Rajput Amr s.Helmy The Edward s.rogers sr.department of electrical and computer engineering University of Toronto10 King’s College RoadTorontoONM5S 3G4Canada

By taking advantage of the abs.nce of diffraction limit res.rictions.in plas.onic s.ructures.s.rong modal confinement is.made pos.ible,paving the way for improved optical proces.es.and miniaturized photonic circuit *** tin oxide(ITO)has.emerged as.a promis.ng plas.onic material that s.rves.as.a relatively low-carrier dens.ty Drude metal by its.electro-optic tunability and vers.tility as.an integrative *** herein demons.rate the facile integration of s.O_(2)/ITO heterointerfaces.into metal-ins.lator-s.miconductor(MIs.electro-optic *** firs. MIs.device employs.a s.O_(2)/ITO heteros.ructure grown on thin polycrys.alline titanium nitride(poly-TiN)and capped at the ITO s.de with thin aluminum(Al)film contact *** TiN interlayer acts.as.a bottom electrode,forming a metal-ins.lator-s.miconductor-metal(MIs.)heterojunction device,and grows.directly on(100)-oriented s.licon(s.).This.MIs. device enables.one to examine the electrical properties.of s.miconductive ITO *** s.cond MIs.device incorporates.a s.miconductive ITO layer with a s.O_(2)dielectric s.acer implemented on a s.licon-on-ins.lator(s.I)platform,forming a graded-index coupled hybrid plas.onic waveguide(CHPW)*** device architecture repres.nts.a crucial s.ep towards.realizing plas.onic modulation us.ng oxide *** CHPW device performance pres.nted herein provides.a proof-of-concept that demons.rates.the advantages.offered by s.ch device topology to perform optical modulation via charge carrier *** graded-index CHPW can be dynamically reconfigured for amplitude,phas.,or 4-quadrature amplitude modulation utilizing a triode-like bias.ng *** exhibited extinction ratio(ER)and ins.rtion los.(IL)levels.of around 1 dB/μm and 0.128 dB/μm,res.ectively,for a 10μm waveguide length.

关键词： Indium tin oxide(ITO) Modulators Oxide s.miconductors Plas.onics Telecom frequency Titanium nitride(TiN)

Large Intelligent s.rface/Antennas.(LIs.): Making Reflective Radios.s.art

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Journal of Communications.and Information Networks 2019年第2期4卷 40-50页

作者： Ying-Chang Liang Ruizhe Long Qianqian Zhang Jie Chen Hei Victor Cheng Huayan Guo Center for Intelligent Networking and Communications.CINC) University of Electronic Science and Technology of China(UESTC)Chengdu 611731China National Key Laboratory of s.ience and Technology on Communications University of Electronic Science and Technology of ChinaChengdu 611731China The Edward s.rogers sr.department of electrical and computer engineering University of TorontoToronto ON M5S 3G4Canada

Large intelligent s.rface/antennas.LIs.),a two-dimens.onal artificial s.ructure with a large number of reflective-s.rface/antenna elements.is.a promis.ng reflective radio technology to cons.ruct programmable wireles. environments.in a s.art ***,each element of the LIs. adjus.s.the reflection of the incident electromagnetic waves.with unnatural properties.s.ch as.negative refraction,perfect abs.rption,and anomalous.reflection,thus.the wireles. environments.can be s.ftware-defined according to various.des.gn *** this.paper,we introduce the reflective radio bas.cs.including backs.attering principles.backs.atter communication,reflective relay,the fundamentals.and implementations.of LIs. ***,we pres.nt an overview of the s.ate-of-the-art res.arch on emerging applications.of LIs.-aided wireles. ***,the limitations.challenges.and open is.ues.as.ociated with LIs. for future wireles. applications.are dis.us.ed.

关键词： reflective radio technology backs.atter communication ambient backs.atter communication LIs.,reflective relay intelligent reflective s.rface s.mbiotic radio