An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient

作     者：谢刚 汤岑 汪涛 郭清 张波 盛况 Wai Tung Ng 

作者机构：College of Electrical EngineeringZhejiang University The Edward S.Rogers Sr.Electrical and Computer Engineering DepartmentUniversity of Toronto TorontoOntarioCanadaM5S 1A1 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第2期

页      面：361-365页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the Delta Science & Technology Educational Development Program (Grant No. DREK2010001) the Zhejiang Provincial Natural Science Foundation of China for Distinguished Young Scholars (Grant No. R1100468) 

主　　题：AlGaN/GaN high-electron mobility transistor air-bridge field plate breakdown voltage breakdown voltage temperature coefficient 

摘      要：An AlGaN/GaN high-electron mobility transistor（HEMT） with a novel source-connected air-bridge field plate（AFP） is experimentally *** device features a metal field plate that jumps from the source over the gate region and lands between the gate and *** compared to a similar size HEMT device with a conventional field plate（CFP） structure,the AFP not only minimizes the parasitic gate to source capacitance,but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage *** a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm,three times higher forward blocking voltage of 375 V was obtained at VGS =-5 *** contrast,a similar sized HEMT with a CFP can only achieve a breakdown voltage no higher than 125 V using this process,regardless of device ***,a temperature coefficient of 0 V/K for the breakdown voltage is ***,devices without a field plate（no FP） and with an optimized conventional field plate（CFP） exhibit breakdown voltage temperature coefficients of-0.113 V/K and-0.065 V/K,respectively.