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Progress in bulk GaN growth

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Chinese Physics B 2015年第6期24卷 1-16页

作者：徐科王建峰任国强 suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences suzhou Nanowin Science and technology co. Ltd.

Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy （HVPE）, Na-flux method, and am- monothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain co.trol, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonother- mal methods are co.pared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectrosco.y. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.

关键词： nitride semico.ductor bulk GaN hydride vapor phase epitaxy (HVPE) dislocation

Supplying active lithium to single-crystal Li(Ni_(0.90)co.(0.05)Mn_(0.05))_(0.98)Ta_(0.02)O_(2) with Li_(2)MnO_(3) co.ting served as cathode for Li-ion batteries

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Particuology 2024年第12期95卷 303-318页

作者： Li Dong Xiaodong Guan Yang Zhou Shibao Tang Feng Chen School of Materials Science and Engineering Suzhou University of Science and TechnologySuzhou215009China suzhou Huayi New Energy technology co. Ltd.Suzhou215433China Xingna Energy(suzhou)co. Ltd.Suzhou215000China Chenguang High Performance Fluorine Material Innovation Center in Sichuan University of Science and Engineering Zigong643000China

Ni-rich layered oxide with Ni molar co.tent larger than 90%was regarded as an extremely promising candidate for cathode material applied in lithium-ion batteries owing to the significant discharging capacity and low ***,rigorous cycling attenuation resulted from the crystal structure co.lapse and unstable particles interface deeply restrained the co.mercial *** the work,LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2) was modified by Ta5+doping and Li_(2)MnO_(3) co.ering,which was aimed to enhance the structure stability,defend the electrolyte attacking and promote Li+migration during *** material characterization demonstrated the cathodes after Ta5+doping delivered the larger cell lattice parameters and higher cation ordering,which was helpful to improve the rate property and discharge capacity at low *** Li_(2)MnO_(3) layer was tightly adhered on the outside of LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2),which co.ld effectively relieve the electrolyte attacking and sustain the particle morphology *** a result,2 wt%Li_(2)MnO_(3) co.ted Li(Ni_(0.90)co.(0.05)Mn_(0.05))_(0.98)Ta_(0.02)O_(2) exhibited the outstanding discharge capacity of 150.2 mAh g^(−1) at 10.0 large current density and 140.6 mAh g^(−1) at−30℃ as well as the remarkable capacity retention of 93.1%after 300 ***,the pouch full batteries obtained by 2 wt%Li_(2)MnO_(3) co.ted Li(Ni_(0.90)co.(0.05)Mn_(0.05))_(0.98)Ta_(0.02)O_(2) also showed the more stable storage capability,cyclic property in co.parison with bare LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2).

关键词： LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2) Li supplement Li_(2)MnO_(3)co.ting High chemical valence state Ta5+doping Enhanced safety and electrochemical property

Growth and doping of bulk GaN by hydride vapor phase epitaxy

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Chinese Physics B 2020年第2期29卷 31-44页

作者： Yu-Min Zhang Jian-Feng Wang De-Min Cai Guo-Qiang Ren Yu Xu Ming-Yue Wang Xiao-Jian Hu Ke Xu suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China suzhou Nanowin Science and technology co. Ltd.Suzhou 215123China

Doping is essential in the growth of bulk GaN substrates,which co.ld help co.trol the electrical properties to meet the requirements of various types of GaN-based *** progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this *** growth technology and precursors of each type of doping are ***,the influence of doping on the optical and electrical properties of GaN are presented in ***,the problems caused by doping,as well as the methods to solve them are also *** last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.

关键词： GaN hydride vapor phase epitaxy(HVPE) doping

Optical experimental solution for the multiway number partitioning problem and its application to co.puting power scheduling

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Science China(Physics,Mechanics & Astronomy) 2023年第9期66卷 15-22页

作者： Jingwei Wen Zhenming Wang Zhiguo Huang Dunbo Cai Bingjie Jia Chongyu Cao Yin Ma Hai Wei Kai Wen Ling Qian China Mobile(suzhou)Software technology co.pany Limited Suzhou 215163China Beijing QBoson Quantum technology co. Ltd.Beijing 100015China

Quantum co.puting is an emerging technology that is expected to realize an exponential increase in co.puting power. Recently,its theoretical foundation and application scenarios have been extensively researched and explored. In this work, we propose efficient quantum algorithms suitable for solving co.puting power scheduling problems in the cloud-rendering domain, which can be viewed mathematically as a generalized form of a typical NP-co.plete problem, i.e., a multiway number partitioning *** our algorithm, the matching pattern between tasks and co.puting resources with the shortest co.pletion time or optimal load balancing is enco.ed into the ground state of the Hamiltonian;it is then solved using the optical co.erent Ising machine, a practical quantum co.puting device with at least 100 qubits. The experimental results show that the proposed quantum scheme can achieve significant acceleration and save 97% of the time required to solve co.binatorial optimization problems co.pared with classical algorithms. This demonstrates the co.putational advantages of optical quantum devices in solving co.binatorial optimization problems. Our algorithmic and experimental work will advance the utilization of quantum co.puters to solve specific NP problems and will broaden the range of possible applications.

关键词： quantum algorithm co.erent Ising machine multiway number partitioning problem

Experimental and numerical study on atmospheric-pressure air dielectric barrier discharge via 50 Hz/5000 Hz dual-frequency excitation

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High Voltage 2024年第2期9卷 391-402页

作者： Junwen He Bangfa Peng Guanglin Yu Ronggang Wang Nan Jiang Jie Li Yan Wu School of Electrical Engineering Dalian University of TechnologyDalianChina Canmax Technologies co. Ltd.SuzhouChina

A dual-frequency(DF)dielectric barrier discharge,excited by the superposition of a 50 Hz low frequency(LF)and a 5000 Hz intermediate frequency(IF),is proposed to enhance *** effect of the LF voltage co.ponent on the breakdown behaviour of the DF discharge during different periods has been studied both experimentally and *** number of high-current pulses rises as the LF voltage *** statistical analysis shows that the number of the current pulse amplitude above 80 mA in the DF discharge reaches nearly 6 times that in the IF ***,the total discharge energy in the DF discharge is significantly higher than that in the IF *** simulation re-produces the temporal variation of the breakdown behaviours in the DF *** simulated results reveal that the maximal electric field strength of the breakdown process is greater in the DF discharge co.pared to the IF discharge during a half-period of ***,the co.parison between the IF and DF discharges exhibits that the LF voltage regulates the accumulation of residual charged species on the dielectric surface after the breakdown by modulating the residual voltage between the air gap.

关键词： dielectric excitation excited

co.parative Study about Degradation of High-purity Magnesium Screw in Intact Femoral Intraco.dyle and in Fixation of Femoral Intraco.dylar Fracture

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Journal of Materials Science & technology 2017年第3期33卷 305-310页

作者： Pei Han Pengfei Cheng Changli Zhao Shaoxiang Zhang Runhua Zhou Xiaonong Zhang Yimin Chai Orthopaedic Department ShanghaiJiao Tong University Affiliated Sixth People's Hospital Shanghai 200233 China State Key Laboratory of Metal Matrix co.posites School of Materials Science and Engineering ShanghaiJiao Tong University Shanghai 200240 China suzhou origin medical technology co. ltd. Suzhou 215513 China

Bone screws enco.nter co.plex mechanical environment in fracture fixation of weight-bearing *** the present study, high-purity magnesium（HP Mg） screws were applied in fixation of rabbit femoral intraco.dylar fracture with 3 mm gap. In the co.trol group, HP Mg screws of the same design were implanted at co.responding position of co.tralateral leg. At 4, 8 and 16 weeks after surgery, retrieved femurs went through micro-co.puted tomography（micro-CT） scanning and hard tissue processing. Under mechanical stress involved in fracture fixation, bending of screw bolt was observed at the portion exposed to facture gap at 4 weeks. Then local co.rosion at the same portion was detected 16 weeks after surgery,which indicated the accumulation effect of mechanical stress on Mg co.rosion. HP Mg screws in the fracture group had no significant difference with the co.trol group in screw volume, surface area, surfaceto-volume ratio（S/V）. And peri-implant bone volume/tissues volume（BV/TV） and bone volume density（BMD） in the fracture group was co.parable to that in the co.trol group. Furthermore, histological analysis showed new formed bone tissues in fracture gap and fracture healing 16 weeks after surgery. Under mechanical stress, HP Mg screw suffered bolt bending and local co.rosion at the portion exposed to fracture gap. But it had no influence on the integral co.rosion behaviors, osseointegration of HP Mg screw and the fracture healing. Therefore, HP Mg screws possessed good potential in fracture fixation of weightbearing bones.

关键词： High-purity magnesium Fracture fixation Femoral intraco.dylar co.rosion Osseointegration

Review on Metallization Approaches for High-Efficiency Silico. Heterojunction Solar Cells

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Transactions of Tianjin University 2022年第5期28卷 358-373页

作者： Yulian Zeng Chen-Wei Peng Wei Hong Shan Wang Cao Yu Shuai Zou Xiaodong Su School of Physical Science and technology Jiangsu Key Laboratory of Thin FilmsSoochow UniversitySuzhou 215006China suzhou Maxwell Technologies co. Ltd.Suzhou 215200China suzhou Isilver Materials co. Ltd.Suzhou 215129China

Crystalline silico.(c-Si)heterojunction(HJT)solar cells are one of the promising technologies for next-generation industrial high-efficiency silico. solar cells,and many efforts in transferring this technology to high-volume manufacturing in the photovoltaic(PV)industry are currently *** is of vital importance to the PV performance and long-term reliability of HJT solar *** this review,we summarize the development status of metallization approaches for highefficiency HJT solar *** co.ventional screen printing technology,to avoid the degradation of the passivation properties of the amorphous silico. layer,a low-temperature-cured(co.tact resistances and high paste *** improve the co.ductivity of electrodes and reduce the metallization co.t,multi-busbar,fine-line printing,and low-temperature-cured silver-co.ted co.per pastes have been *** addition,several potential metallization technologies for HJT solar cells,such as the Smart Wire co.tacting technology,pattern transfer printing,inkjet/FlexTrailprinting,and co.per electroplating,are discussed in detail.B ased on the summary,the potential and challenges of these metallization technologies for HJT solar cells are analyzed.

关键词： Silico. solar cells Passivating-co.tact Heterojunction Metallization Electrode

Influence of co.e box vents distribution on flow dynamics of co.e shooting process based on experiment and numerical simulation

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China Foundry 2016年第1期13卷 22-29页

作者： Chang-jiang Ni Gao-chun Lu Qing-dong Zhang Tao Jing Jun-jiao Wu Lin-long Yang Qin-fang Wu School of Materials Science and Engineering Tsinghua University suzhou Mingzhi technology co. Ltd.

co.e shooting process plays a decisive role in the quality of sand co.es, and co.e box vents distribution is one of the most important factor determining the effectiveness of co.e shooting process. In this paper, the influence of co.e box vents distribution on the flow dynamics of co.e shooting process was investigated based on in situ experimental observations with transparent co.e box, high-speed camera and pressure measuring system. Attention was focused on the variation of both the flow behavior of sand and pressure curves due to different vents distribution. Taking both kinetic and frictional stress into acco.nt, a kinetic-frictional co.stitutive model was established to describe the internal momentum transfer in the solid phase. Two-fluid model(TFM) simulation was then performed and good agreement was achieved between the experimental and simulated results on both the flow behavior of sand and the pressure curves. It was found that vents distribution has direct effect on the pressure difference of different locations in the co.e box, which determines the buoyancy force exerting on the sand particles and significantly influences the filling process of co.e sand.

关键词： vents distribution flow dynamics pressure variation co.e shooting process kinetic-frictional model two-fluid model

Interaction of two symmetric monovacancy defects in graphene

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Chinese Physics B 2019年第4期28卷 300-304页

作者： Wen-Yan Xu Li-Zhi Zhang Li Huang Yan-De Que Ye-Liang Wang Xiao Lin Shi-Xuan Du Institute of Physics & University of Chinese Academy of Sciences Chinese Academy of Sciences suzhou Saibao Calibration technology co. ltd.

We investigate the interactions between two symmetric monovacancy defects in graphene grown on Ru(0001) after silico. intercalation by co.bining first-principles calculations with scanning tunneling microsco.y(STM). First-principles calculations based on free-standing graphene show that the interaction is weak and no scattering pattern is observed when the two vacancies are located in the same sublattice of graphene, no matter how close they are, except that they are next to each other. For the two vacancies in different sublattices of graphene, the interaction strongly influences the scattering and new patterns' emerge, which are determined by the distance between two vacancies. Further experiments on silico. intercalated graphene epitaxially grown on Ru(0001) shows that the experiment results are co.sistent with the simulated STM images based on free-standing graphene, suggesting that a single layer of silico. is good enough to deco.ple the strong interaction between graphene and the Ru(0001) substrate.

关键词： monovacancy defect graphene density functional theory STM