Growth and doping of bulk GaN by hydride vapor phase epitaxy

作     者：Yu-Min Zhang Jian-Feng Wang De-Min Cai Guo-Qiang Ren Yu Xu Ming-Yue Wang Xiao-Jian Hu Ke Xu 张育民;王建峰;蔡德敏;任国强;徐俞;王明月;胡晓剑;徐科

作者机构：Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Suzhou Nanowin Science and Technology Co.Ltd.Suzhou 215123China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2020年第29卷第2期

页      面：31-44页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0404100 and 2016YFA0201101) the National Natural Science Foundation of China(Grant Nos.61574164,61704187,and 61604170) the Key Research Program of the Frontier Science of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH042) the State Key Program of the National Natural Science Foundation of China(Grant Nos.61734008and 11435010) the National Key Scientific Instrument and Equipment Development Project,China(Grant No.11327804) 

主　　题：GaN hydride vapor phase epitaxy(HVPE) doping 

摘      要：Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based *** progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this *** growth technology and precursors of each type of doping are ***,the influence of doping on the optical and electrical properties of GaN are presented in ***,the problems caused by doping,as well as the methods to solve them are also *** last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.