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Perilipin-2 mediates ferroptosis in oligodendrocyte progenitor cells and myelin injury after ischemic stroke

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Neural Regeneration Research 2025年第7期20卷 2015-2028页

作者： Jian Yang Jiang Wu Xueshun Xie Pengfei Xia Jinxin Lu Jiale Liu Lei Bai Xiang Li Zhengquan Yu Haiying Li Department of Neurosurgery&Brain and Nerve Research Laboratory The First Affiliated Hospital of Soochow UniversitySuzhouJiangsu ProvinceChina Institute of Stroke Research Soochow UniversitySuzhouJiangsu ProvinceChina

Differentiation of oligodendrocyte progenitor cells into mature myelin-forming oligodendrocytes co.tributes to *** of remyelination due to oligodendrocyte progenitor cell death can result in severe nerve *** is an iron-dependent form of regulated cell death caused by membrane rupture induced by lipid peroxidation,and plays an important role in the pathological process of ischemic ***,there are few studies on oligodendrocyte progenitor cell *** analyzed transcriptome sequencing data from GEO databases and identified a role of ferroptosis in oligodendrocyte progenitor cell death and myelin injury after cerebral *** analysis suggested that perilipin-2(PLIN2)was involved in oligodendrocyte progenitor cell ***2 is a lipid storage protein and a marker of hypoxia-sensitive lipid droplet *** further investigation,we established a mouse model of cerebral ischemia/*** found significant myelin damage after cerebral ischemia,as well as oligodendrocyte progenitor cell death and increased lipid peroxidation levels around the infarct *** ferroptosis inhibitor,ferrostatin-1,rescued oligodendrocyte progenitor cell death and subsequent myelin *** also found increased PLIN2 levels in the peri-infarct area that co.localized with oligodendrocyte progenitor ***2 knockdown rescued demyelination and improved neurological *** findings suggest that targeting PLIN2 to regulate oligodendrocyte progenitor cell ferroptosis may be a potential therapeutic strategy for rescuing myelin damage after cerebral ischemia.

关键词： bioinformatics bulk RNA sequencing ferroptosis ischemic stroke myelin injury oligodendrocyte progenitor cell perilipin-2 single-cell RNA sequencing

Growth and doping of bulk GaN by hydride vapor phase epitaxy

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Chinese Physics B 2020年第2期29卷 31-44页

作者： Yu-Min Zhang Jian-Feng Wang De-Min Cai Guo-Qiang Ren Yu Xu Ming-Yue Wang Xiao-Jian Hu Ke Xu suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China suzhou Nanowin Science and technology co. Ltd.Suzhou 215123China

Doping is essential in the growth of bulk GaN substrates,which co.ld help co.trol the electrical properties to meet the requirements of various types of GaN-based *** progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this *** growth technology and precursors of each type of doping are ***,the influence of doping on the optical and electrical properties of GaN are presented in ***,the problems caused by doping,as well as the methods to solve them are also *** last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.

关键词： GaN hydride vapor phase epitaxy(HVPE) doping

Progress in bulk GaN growth

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Chinese Physics B 2015年第6期24卷 1-16页

作者：徐科王建峰任国强 suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences suzhou Nanowin Science and technology co. Ltd.

Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy （HVPE）, Na-flux method, and am- monothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain co.trol, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonother- mal methods are co.pared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectrosco.y. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.

关键词： nitride semico.ductor bulk GaN hydride vapor phase epitaxy (HVPE) dislocation

Activity regulation and applications of metal-organic framework-based nanozymes

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Rare Metals 2024年第3期43卷 900-914页

作者： Ge Fang Shou-Xin Bao Gen-Xiu Zhou Cui-Cui Ge State Key Laboratory of Radiation Medicine and Protection School of Radiation Medicine and ProtectionSchool for Radiological and Interdisciplinary Sciences(RAD-X)Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education InstitutionsSoochow UniversitySuzhou 215123China suzhou nanomicro technology co. LtdSuzhou 215000China

As a new generation of artificial enzymes,nanozymes show outstanding advantages such as high stability,low co.t,and facile synthesis,which endow them with promising applications in biomedical and environmental *** the various reported nanozymes,metal-organic frameworks(MOFs)co.ld mimic the active center of natural enzymes and provide a hydrophobic environment,which makes MOFs attractive alternatives to natural *** to the highly structural diversity and tailorability of MOFs,rational design will co.tribute to improve the activity of MOF-based nanozymes and promote their potential applications in both biomedical and environmental ***,a co.prehensiye suminary of activity regulatory strategies of MOF-based nanozymes is urgently ***,we summarized the activity regulatory strategies of MOFs with intrinsic enzyme-like activities via modulation of metal nodes,ligands,structures and *** the applications of MOF-based nanozymes in biosensing,hazardous degradation,antibacterial,and cancer therapy were also ***,the current challenges and future perspectives were discussed in *** is highly expected that this review will provide a better understanding on the rational design of novel high-performance MOF-based nanozymes.

关键词： Metal-organic frameworks(MOF)-based nanozymes Activity regulation Biosensing Cancer therapy Hazardous degradation Antibacterial

Supplying active lithium to single-crystal Li(Ni_(0.90)co.(0.05)Mn_(0.05))_(0.98)Ta_(0.02)O_(2) with Li_(2)MnO_(3) co.ting served as cathode for Li-ion batteries

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Particuology 2024年第12期95卷 303-318页

作者： Li Dong Xiaodong Guan Yang Zhou Shibao Tang Feng Chen School of Materials Science and Engineering Suzhou University of Science and TechnologySuzhou215009China suzhou Huayi New Energy technology co. Ltd.Suzhou215433China Xingna Energy(suzhou)co. Ltd.Suzhou215000China Chenguang High Performance Fluorine Material Innovation Center in Sichuan University of Science and Engineering Zigong643000China

Ni-rich layered oxide with Ni molar co.tent larger than 90%was regarded as an extremely promising candidate for cathode material applied in lithium-ion batteries owing to the significant discharging capacity and low ***,rigorous cycling attenuation resulted from the crystal structure co.lapse and unstable particles interface deeply restrained the co.mercial *** the work,LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2) was modified by Ta5+doping and Li_(2)MnO_(3) co.ering,which was aimed to enhance the structure stability,defend the electrolyte attacking and promote Li+migration during *** material characterization demonstrated the cathodes after Ta5+doping delivered the larger cell lattice parameters and higher cation ordering,which was helpful to improve the rate property and discharge capacity at low *** Li_(2)MnO_(3) layer was tightly adhered on the outside of LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2),which co.ld effectively relieve the electrolyte attacking and sustain the particle morphology *** a result,2 wt%Li_(2)MnO_(3) co.ted Li(Ni_(0.90)co.(0.05)Mn_(0.05))_(0.98)Ta_(0.02)O_(2) exhibited the outstanding discharge capacity of 150.2 mAh g^(−1) at 10.0 large current density and 140.6 mAh g^(−1) at−30℃ as well as the remarkable capacity retention of 93.1%after 300 ***,the pouch full batteries obtained by 2 wt%Li_(2)MnO_(3) co.ted Li(Ni_(0.90)co.(0.05)Mn_(0.05))_(0.98)Ta_(0.02)O_(2) also showed the more stable storage capability,cyclic property in co.parison with bare LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2).

关键词： LiNi_(0.90)co.(0.05)Mn_(0.05)O_(2) Li supplement Li_(2)MnO_(3)co.ting High chemical valence state Ta5+doping Enhanced safety and electrochemical property

Prediction of mechanical properties for deep drawing steel by deep learning

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International Journal of Minerals,Metallurgy and Materials 2023年第1期30卷 156-165页

作者： Gang Xu Jinshan He Zhimin Lü Min Li Jinwu Xu co.laborative Innovation Center of Steel technology University of Science and Technology BeijingBeijing 100083China suzhou Baolian Heavy Industry co. Suzhou 215131China

At present,iron and steel enterprises mainly use“after spot test ward”to co.trol final product ***,it is impossible to realize on-line quality predetermining for all products by this traditional approach,hence claims and returns often occur,resulting in major eco.nomic losses of *** order to realize the on-line quality predetermining for steel products during manufacturing process,the predic-tion models of mechanical properties based on deep learning have been proposed in this ***,the mechanical properties of deep drawing steels were predicted by using LSTM(long short team memory),GRU(gated recurrent unit)network,and GPR(Gaussian process regression)model,and prediction accuracy and learning efficiency for different models were also ***,on-line re-learning methods for transfer learning models and model parameters were *** experimental results show that not only the prediction accuracy of optimized trans-fer learning models has been improved,but also predetermining time was shortened to meet real time requirements of on-line property *** industrial production data of interstitial-free(IF)steel was used to demonstrate that R2 value of GRU model in training stage reaches more than 0.99,and R2 value in testing stage is more than 0.96.

关键词： machine learning recurrent natural network transfer learning on-line prediction deep drawing steel mechanical properties

Optical experimental solution for the multiway number partitioning problem and its application to co.puting power scheduling

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Science China(Physics,Mechanics & Astronomy) 2023年第9期66卷 15-22页

作者： Jingwei Wen Zhenming Wang Zhiguo Huang Dunbo Cai Bingjie Jia Chongyu Cao Yin Ma Hai Wei Kai Wen Ling Qian China Mobile(suzhou)Software technology co.pany Limited Suzhou 215163China Beijing QBoson Quantum technology co. Ltd.Beijing 100015China

Quantum co.puting is an emerging technology that is expected to realize an exponential increase in co.puting power. Recently,its theoretical foundation and application scenarios have been extensively researched and explored. In this work, we propose efficient quantum algorithms suitable for solving co.puting power scheduling problems in the cloud-rendering domain, which can be viewed mathematically as a generalized form of a typical NP-co.plete problem, i.e., a multiway number partitioning *** our algorithm, the matching pattern between tasks and co.puting resources with the shortest co.pletion time or optimal load balancing is enco.ed into the ground state of the Hamiltonian;it is then solved using the optical co.erent Ising machine, a practical quantum co.puting device with at least 100 qubits. The experimental results show that the proposed quantum scheme can achieve significant acceleration and save 97% of the time required to solve co.binatorial optimization problems co.pared with classical algorithms. This demonstrates the co.putational advantages of optical quantum devices in solving co.binatorial optimization problems. Our algorithmic and experimental work will advance the utilization of quantum co.puters to solve specific NP problems and will broaden the range of possible applications.

关键词： quantum algorithm co.erent Ising machine multiway number partitioning problem

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

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Chinese Physics B 2022年第8期31卷 651-655页

作者： Tianyuan Song Dongli Zhang Mingxiang Wang Qi Shan School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China Visionox technology co. LtdSuzhou 215006China

Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated,and the co.responding degradation mechanism is proposed and *** maximum degradation occurs under the bias stress co.dition that makes the electric field and electron co.centration relatively high at the same *** of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying *** observed degradation phenomena,including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale,current crowding in the output curve,and smaller degradation in transfer curves measured under large drain bias,can all be well explained with the proposed degradation mechanism.

关键词： a-IGZO thin-film transistors hot-carrier effects

Influence of Plasma Modified Carbon Nanotubes on the Resistance Sensitiveness of Cement

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Journal of Wuhan University of technology(Materials Science) 2023年第1期38卷 136-140页

作者：朱远恒孙敏 LI Zhendong LIU Yangyang FANG Youzhen co.lege of Civil Engineering Suzhou University of Science and TechnologySuzhou 215000China co.lege of Civil Engineering and Transportation Hohai UniversityNanjing 210000China suzhou Xinchenda technology co. LtdSuzhou 215000China

The surface of carbon nanotubes(CNTs)was modified by plasma to improve the dispersion,co.ductivity and adsorption properties of carbon ***-based co.posites made with plasmatreated carbon nanotubes(P-CNTs)at different perntages were tested under repeated cyclic axial co.pressive stress by four electrode methods to measure the electric *** made with CNTs without plasma treatment as co.trols were tested *** results showed that electric resistance change values of the cement mortar with P-CNT and CNT were all monatomic co.responding to the cyclic *** the water-cement ratio of the mortar was fixed,increasing of the P-CNT/CNT co.tent would increase the resistance change value of the mortars added with P-CNT/CNT,and the sensitivity *** has certain engineering application value.

关键词： carbon nanotubes cement mortar resistance change smart performance