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Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

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chinese Physics B 2012年第3期21卷 365-370页

作者：黄小辉刘建平范亚明孔俊杰杨辉王怀兵 suzhou institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences

The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates （PSSes） with different values of fill factor （f） and slanted angle （0） are investigated in detail. The threading dislocation （TD） density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency （IQE）. Also the ability of the LED to withstand the electrostatic discharge （ESD） increases as the fill factor decreases. The illumination output power of the LED is affected by both 0 and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan 0 and f is higher than that with a higher production of tan 0 and f.

关键词： GaN Patterned sapphire substrate light emitting diode

Optoelectronic platform and technology

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Frontiers of Information Technology & Electronic Engineering 2019年第4期20卷 439-457页

作者： Wen-hua SHI Wei-ming LV Tian-yu SUN Bao-shun ZHANG suzhou institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences

Optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.

关键词： Optoelectronic technology Optoelectronic platform Process technology Development and challenges

Optimize Purcell filter design for reducing influence of fabrication variation

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chinese Physics B 2024年第6期33卷 589-594页

作者：蔡晓周翼彪于文龙熊康林冯加贵 Gusu Laboratory of Materials Suzhou 215123China suzhou institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

To protect superconducting qubits and enable rapid readout, optimally designed Purcell filters are essential. To suppress the off-resonant driving of untargeted readout resonators, individual Purcell filters are used for each readout ***, achieving consistent frequency between a readout resonator and a Purcell filter is a significant challenge. A systematic computational analysis is conducted to investigate how fabrication variation affects filter performance, through focusing on the coupling capacitor structure and coplanar waveguide(CPW) transmission line specifications. The results indicate that the T-type enclosing capacitor(EC), which exhibits lower structural sensitivity, is more advantageous for achieving target capacitance than the C-type EC and the interdigital capacitor(IDC). By utilizing a large-sized CPW with the T-type EC structure, fluctuations in the effective coupling strength can be reduced to 10%, given typical micro-nanofabrication variances. The numerical simulations presented in this work minimize the influence of fabrication deviations, thereby significantly improving the reliability of Purcell filter designs.

关键词： superconducting circuit Purcell filter coplanar waveguide capacitor structure

Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition

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chinese Physics Letters 2020年第6期37卷 115-118页

作者： Yu Zhao Yan Teng Jing-Jun Miao Qi-Hua Wu Jing-Jing Gao Xin Li Xiu-Jun Hao Ying-Chun Zhao Xu Dong Min Xiong Yong Huang Key Lab of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China Nano-fabrication Facility Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China

Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal-organic chemical vapor deposition *** formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and itsⅠ-Ⅴcharacteristics.A cut-off wavelength around 5μm was determined in 77 K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640μm *** preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.

关键词： InAs/GaSb dopant planar

Asymmetric Synthesis of Chiral Trifluoromethyl Containing Heterocyclic Amino Acids

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chinese Journal of Chemistry 2017年第10期35卷 1540-1548页

作者： Liang Zhao Shengbin Zhou Junhua Tong Jiang Wang Hong Liu Nano Science and Technology institute University of Science and Technology of China Suzhou Jiangsu 215123 China State Key Laboratory of Drug Research Shanghai Institute ofMateria Medica Chinese Academy of Sciences Shanghai 201203 China CAS Key Laboratory of Receptor Research Shanghai institute ofMateria Medica Chinese Academy of Sciences Shanghai 201203 China

An operationally convenient, asymmetric synthesis of cbiral trifluoromethyl containing heterocyclic amino ac- ids has been developed via Michael addition reaction of chiral equivalent of Ni（II）-complex of glycine and ]Ltrifluoromethylated-α,β-unsaturated ketones. The simplicity of the experimental procedures and high stereochem- ical outcome of the presented method render these heterocyclic amino acids readily available for systematic medicinal chemistry studies and de novo peptide design.

关键词： trifluoromethyl containing heterocyclic amino acids Ni(II)-complex of glycine asymmetric Michaeladdition α,β-unsaturated ketones

A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator

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chinese Physics Letters 2011年第10期28卷 199-202页

作者： ZHOU Bin WANG Jin-Yan MENG Di LIN Shu-Xun FANG Min DONG Zhi-Hua YU Min HAO Yi-Long Cheng PWEN institute of Microelectronics Peking UniversityBeijing 100871 suzhou institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123

Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors(MOSHEMTs/HEMTs)is successfully *** devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage(V br=490 V vs 88 V for normal HEMT)improvement,compared with conventional Schottky-gate ***,the transconductance of the MOSHEMT is only slightly lower(2.6%)than that of Schottky-gate HEMTs and have a wider full width of half *** notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.

关键词： AlGaN/GaN HEMTs MOSHEMT

Growth and doping of bulk GaN by hydride vapor phase epitaxy

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chinese Physics B 2020年第2期29卷 31-44页

作者： Yu-Min Zhang Jian-Feng Wang De-Min Cai Guo-Qiang Ren Yu Xu Ming-Yue Wang Xiao-Jian Hu Ke Xu suzhou institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China suzhou Nanowin Science and Technology Co. Ltd.Suzhou 215123China

Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based *** progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this *** growth technology and precursors of each type of doping are ***,the influence of doping on the optical and electrical properties of GaN are presented in ***,the problems caused by doping,as well as the methods to solve them are also *** last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.

关键词： GaN hydride vapor phase epitaxy(HVPE) doping

Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN

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chinese Physics Letters 2012年第1期29卷 220-223页

作者： ZENG Chang ZHANG Shu-Ming WANG Hui LIU Jian-Ping WANG Huai-Bing LI Zeng-Cheng FENG Mei-Xin ZHAO De-Gang LIU Zong-Shun JIANG De-Sheng YANG Hui State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 suzhou institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123

We report on the formation of Ohmic contacts with low resistance and high thermal stability to N-face n-GaN for vertical structure light emitters using a Ti(50nm)/Pt(50nm)/Au(50nm)metal scheme,where the Pt layer is introduced as a blocking layer to suppress the diffusion of Au onto the N-face n-GaN *** is shown that unlike the conventional Ti/A1/Ti/Au contacts,the Ti/Pt/Au contacts exhibit an Ohmic behavior with a relatively low specific contact resistivity of 1.1×10^(-4)Ω.cm^(2) even after annealing at 350℃.X-ray diffraction(XRD)measurements by synchrotron radiation and Auger electron spectroscopy(AES)examination are performed to understand the effects of heat treatment.

关键词： Ohmic emitter resistivity

Inhibitory effect of quercetin on proliferation of human microvascular endothelial cells in vitro

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Acta Pharmacologica Sinica 2003年第12期24卷 57-60页

作者： FAN Pan-Sheng, GU Zhen-Lun SHENG Rui, LIANG Zhong-Qin, WANG Xiao-Xia, ZHU Yi Department of Pharmacology, institute of chinese Materia medica, Soochow University, suzhou 215007, China Department of Pharmacology Institute of Chinese Materia Medica Soochow University Suzhou 215007

AIM: To investigate the role of quercetin (Que) in the proliferation of cultured human skin microvascular endothelial cells (MVEC). METHODS: Cell count and [methyl-~3H]thymidine ([~3H]TdR) uptake assay were used to measure the effect of Que in the proliferation of cultured MVEC. Cytotoxicity of Que on MVEC was also evaluated by51Cr release assay. RESULTS: When MVEC were treated with Que, the proliferation was significantly inhibited in a time-course and dose-dependent manner. Que 5 μmol/L did not inhibit the proliferation of MVEC. When the concentration of Que increased to 20, 40, 80, and 160μmol/L, the cell numbers per well were decreased and the inhibition rate was 12.2％, 23.5％, 35.3％, and 54.1％ respectively with IC50of 138 μmol/L. The inhibitory rate of [~3H]-TdR uptake was 18.7％, 34.4％, 48.9％, and 62.5％ respectively (IC50=87.5 μmol/L).51Cr release assay showed that Que 160μmol/L incubated with MVEC from 1 to 16h had no clear cytotoxicity compared with control group. CONCL

关键词： quercetin vascular endothelium cell division cytotoxicity human