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Recent progresses in thermal treatment of β-Ga_(2)O_(3) single crystals and devices

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International Journal of Minerals,Metallurgy and Materials 2024年第7期31卷 1659-1677页

作者： Yuchao Yan Zhu Jin Hui Zhang Deren Yang state key laboratory of Silicon and Advanced semiconductor Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Zhejiang Provincial key laboratory of power semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation CenterHangzhou 311200China

In recent years,ultra-wide bandgap β-Ga_(2)O_(3) has emerged as a fascinating semiconductor material due to its great potential in power and photoelectric *** semiconductor industrial,thermal treatment has been widely utilized as a convenient and effective approach for substrate property modulation and device ***,a thorough summary of β-Ga_(2)O_(3) substrates and devices behaviors after high-temperature treatment should be *** this review,we present the recent advances in modulating properties of β-Ga_(2)O_(3) substrates by thermal treatment,which include three major applications:(ⅰ)tuning surface electrical properties,(ⅱ)modifying surface morphology,and(ⅲ)oxidating ***,regulating electrical contacts and handling with radiation damage and ion implantation have also been discussed in device *** each category,universal annealing conditions were speculated to figure out the corresponding problems,and some unsolved questions were proposed *** review could construct a systematic thermal treatment strategy for various purposes and applications of β-Ga_(2)O_(3).

关键词： β-gallium oxide thermal treatment substrates devices

Generation and regulation of electromagnetic pulses generated by femtosecond lasers interacting with multitargets

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Nuclear Science and Techniques 2024年第1期35卷 96-107页

作者： Ya-Dong Xia De-Feng Kong Qiang-You He Zhen Guo Dong-Jun Zhang Tong Yang Hao Cheng Yu-Ze Li Yang Yan Xiao Liang Ping Zhu Xing-Long Xie Jian-Qiang Zhu Ting-Shuai Li Chen Lin Wen-Jun Ma Xue-Qing Yan state key laboratory of Nuclear Physics and Technology and Key Laboratory of HEDP of the Ministry of EducationCAPTPeking UniversityBeijing 100871China Beijing laser Acceleration Innovation Center Beijing 101407China Institute of Guangdong laser Plasma Technology Guangzhou 510540China National laboratory on high power laser and Physics Shanghai Institute of Optics and FineChinese Academy of SciencesShanghai 201800China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731China

Ultrashort and powerful laser interactions with a target generate intense wideband electromagnetic pulses(EMPs).In this study,we report EMPs generated by the interactions between petawatt(30 fs,1.4×10^(20) W/cm^(2))femtosecond(fs)lasers with metal flat,plastic flat,and plastic nanowire-array(NWA)*** analyses are conducted on the EMPs in terms of their spatial distribution,time and frequency domains,radiation energy,and *** results indicate that EMPs from metal targets exhibit larger amplitudes at varying angles than those generated by other types of targets and are enhanced significantly for NWA *** a plastic target holder and increasing the laser focal spot can significantly decrease the radiation energy of the ***,the composite shielding materials indicate an effective shielding effect against *** simulation results show that the NWA targets exert a collimating effect on thermal electrons,which directly affects the distribution of *** study provides guidance for regulating EMPs by controlling the laser focal spot,target parameters,and target rod material and is beneficial for electromagnetic-shielding design.

关键词： Electromagnetic pulses laser plasma interaction Electromagnetic shielding Electron distribution

Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer

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Journal of semiconductors 2024年第7期45卷 70-75页

作者： Bosen Liu Guohao Yu Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang state key laboratory of high-power semiconductor laser School of PhysicsChangchun University of Science and TechnologyChangchun 130022China Nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Suzhou powerhouse Electronics Technology Co. Ltd.Suzhou 215123China

In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.

关键词： AlGaN/GaN MIS HEMTs gate dielectric layer depletion-mode gate reliability I_(on)/I_(off)ratio

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Long-wave infrared emission properties of strain-balanced InAs/In_(x)Ga_(1-x)As_(y)Sb_(1-y)type-Ⅱsuperlattice on different substrates

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Rare Metals 2024年第7期43卷 3194-3204页

作者： Chao Shi Xuan Fang Hong-Bin Zhao Deng-Kui Wang Xi Chen Dan Fang Dong-Bo Wang Xiao-Hua Wang Jin-Hua Li state key laboratory of high power semiconductor lasers School of PhysicsChangchun University of Science and TechnologyChangchun 130022China state key laboratory of Advanced Materials for Smart Sensing China General Research Institute for Nonferrous MetalsBeijing 100088China Department of Opto-Electronic Information Science School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin 150001China

high-performance type-Ⅱsuperlattices ofⅢ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic *** the quality of epitaxial materials and clarifying the luminescent mechanism are of great significance for practic al applic *** this work,strain-balanced and high-quality In As/In_(x)Ga_(1-x)As_(y)Sb_(1-y)superlattices without lattice mismatch were achieved on InAs and GaSb substrates *** grown on In As substrate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'***,the strain distribution phenomenon from geometric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more *** addition,the optical properties of superlattices grown on different substrates are discussed *** of the difference in fluctuations of element composition and interface roughness of superlattices on different substrates,the superlattices grown on In As substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared ***,the thermal quenching of emission intensity indicates that the superlattices grown on the In As substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

关键词： Photoluminescence Alloy compositions fluctuations InAs(Sb)/In_(x)Ga_(1-x)As_(y)Sb_(1-y) Type-Ⅱsuperlattice Substrate

Intermediate phase-assisted growth of CsPbBr_(3) for high performance of carbon-based perovskite solar cells

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Rare Metals 2024年第5期43卷 2222-2229页

作者： Bo-Yan Liu He-Ming Yang Yu-Dong Zuo Zhi-Hao Tao Jun-Chun Li Ya-Jing Chang Guo-Qing Tong Yang Jiang School of Materials Science and Engineering Hefei University of TechnologyHefei 230009China state key laboratory of Pulsed power laser Technology National University of Defense TechnologyHefei 230037China

CsPbBr_(3)inorganic perovskites have been regarded as the promising materials in the field of photo-voltaics because of the high tolerance against *** high energy barrier of phase transition from lead bromide(PbBr_(2))to CsPbBr_(3)perovskite and low solubility of perovskite in organic solvent impede the further improvement of device performance in terms of CsPbBr_(3)solar ***,an intermediate phase-assisted growth of CsPbBr_(3)perovskite was proposed by introducing tetraphenylphosphonium bromide(TPPB)as *** TPPB is expected to react with PbBr_(2)in organic solvent to form an intermediate phase of[***]-PbBr_(2),which not only effectively improves the crystallinity of PbBr2 crystals,but also greatly reduces the phase transition energy barrier,leading to uniform and compact CsPbBr_(3)perovskite films with large grain size and high *** combination with carbon electrode,the CsPbBr_(3)solar cells yield a champion device performance of 9.57%in comparison of pristine CsPbBr_(3)solar cells showing a low efficiency of 8.17%.Furthermore,the intermediate phaseassisted growth of CsPbBr_(3)-based solar cells displays an outstanding storage over720 h.

关键词： CsPbBr_(3) Perovskite solar cells Carbon electrode Hole transport layer free Intermediate phase

highly efficient 1D p-Te/2D n-Bi_(2)Te_(3) heterojunction self-driven broadband photodetector

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Nano Research 2024年第3期17卷 1864-1874页

作者： Chenchen Zhao Dongbo Wang Jiamu Cao Zhi Zeng Bingke Zhang Jingwen Pan Donghao Liu Sihang Liu Shujie Jiao Tianyuan Chen Gang Liu Xuan Fang Liancheng Zhao Jinzhong Wang School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China School of Astronautics Harbin Institute of TechnologyHarbin 150001China Center for high Pressure Science and Technology Advanced Research Shanghai 201203China state key laboratory of high power semiconductor lasers Changchun University of Science and TechnologyChangchun 130022China

Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical ***,high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension ***,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)photodetectors,with their high performance attributed to the good interfacial contacts reducing interface *** device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as *** R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of *** is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.

关键词： topological insulating states interfacial recombination self-driven 1D p-Te/2D n-Bi_(2)Te_(3) photodetector

Short-term prediction for chaotic time series based on photonic reservoir computing using VCSEL with a feedback loop

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Photonics Research 2024年第6期12卷 1222-1230页

作者： XINGXING GUO HANXU ZHOU SHUIYING XIANG QIAN YU YAHUI ZHANG YANAN HAN TAO WANG YUE HAO state key laboratory of Integrated Service Networks Xidian UniversityXi'an 710071China state key Discipline laboratory of Wide Bandgap semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

Chaos,occurring in a deterministic system,has permeated various fields such as mathematics,physics,and life ***,the prediction of chaotic time series has received widespread attention and made signifi-cant ***,many problems,such as high computational complexity and difficulty in hardware im-plementation,could not be solved by existing *** overcome the problems,we employ the chaotic system of a vertical-cavity surface-emitting laser(VCSEL)mutual coupling network to generate chaotic time series through optical system simulation and experimentation in this ***,a photonic reservoir com-puting based on VCSEL,along with a feedback loop,is proposed for the short-term prediction of the chaotic time *** relationship between the prediction difficulty of the reservoir computing(RC)system and the differ-ence in complexity of the chaotic time series has been studied with ***,the attention coefficient of injection strength and feedback strength,prediction duration,and other factors on system perfor-mance are considered in both simulation and *** use of the RC system to predict the chaotic time series generated by actual chaotic systems is significant for expanding the practical application scenarios of the RC.

关键词： loop chaotic prediction

Synergic action of linear dispersion, second-order nonlinearity, and third-order nonlinearity in shaping the spectral profile of a femtosecond pulse transporting in a lithium niobate crystal

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Photonics Research 2024年第4期12卷 774-783页

作者： LIHONG HONG YUANYUAN LIU ZHI-YUAN LI state key laboratory of high Field laser Physics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China School of Physics and Optoelectronics South China University of TechnologyGuangzhou 510640China

We present a detailed theoretical and numerical analysis on the temporal-spectral-spatial evolution of a highpeak-power femtosecond laser pulse in two sets of systems:a pure lithium niobate(LN)plate and a periodically poled lithium niobate(PPLN)*** develop a modified unidimensional pulse propagation model that considers all the prominent linear and nonlinear processes and carried out the simulation process based on an improved split-step Fourier transformation *** theoretically analyze the synergic action of the linear dispersion effect,the second-order nonlinearity(2nd-NL)second-harmonic generation(SHG)effect,and the third-order nonlinearity(3rd-NL)self-phase modulation(SPM)effect,and clarify the physical mechanism underlying the peculiar and diverse spectral broadening patterns previously reported in LN and PPLN thin plate *** analysis and discussion provides a deeper insight into the synergetic contribution of these linear and nonlinear effects brought about by the interaction of a femtosecond laser pulse with the LN nonlinear crystal and helps to draw a picture to fully understand these fruitful optical physical processes,phenomena,and laws.

关键词： pulse nonlinearity lithium

Defects evolution in n-type 4H-SiC induced by electron irradiation and annealing

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Journal of semiconductors 2024年第7期45卷 77-83页

作者： Huifan Xiong Xuesong Lu Xu Gao Yuchao Yan Shuai Liu Lihui Song Deren Yang Xiaodong Pi state key laboratory of Silicon and Advanced semiconductor Materials&School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China key laboratory of power semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced semiconductors ZJU-Hangzhou Global Scientific and Technological Innovation CenterZhejiang UniversityHangzhou 311200China

Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation ***, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.

关键词： 4H-SiC deep level transient spectroscopy(DLTS) photoluminescence(PL) defects