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High-performance piezoresistive sensors based on transfer-free large-area PdSe_(2) films for human motion and health care monitoring

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InfoMat 2024年第1期6卷 139-149页

作者： Rui Zhang Jie Lin Tao He Jiafang Wu Zhuojun Yang Liwen Liu Shaofeng Wen Yimin Gong Haifeng Lv Jing Zhang Yi Yin Fangjia Li Changyong Lan Chun Li State Key Laboratory of Electronic Thin films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengduthe People's Republic of China School of Physics University of Electronic Science and Technology of ChinaChengduthe People's Republic of China Sichuan Academy of Medical Sciences and Sichuan People's Hospital Chengduthe People's Republic of China School of Medicine University of Electronic Science and Technology of ChinaChengduthe People's Republic of China

Two-dimensional transition metal dichalcogenides(TMDs)are needed in highperformance piezoresistive sensors due to their strong strain-induced bandgap modification and thereby large gauge ***,integrating a conventional high-temperature chemical vapor deposition(CVD)-grown TMD with a flexible substrate necessitates a transfer process that inevitably degrades the sensing properties of the TMDs and increases the overall fabrication *** present a high-performance piezoresistive strain sensor that employs largearea PdSe_(2) films grown directly on polyimide(PI)substrates via plasma-assisted selenization of a sputtered Pd *** reliable strain transfer from the substrate to the PdSe_(2) film ensures an outstanding strain-sensing capability of the ***,the sensors have a gauge factor of up to315±2.1,a response time under 25 ms,a detection limit of 8×10^(-6),and an exceptional stability of over 104 loadingunloading *** attaching the sensors to the skin surface,we demonstrate their application for measuring physiological parameters in health care monitoring,including motion,voice,and arterial pulse ***,using the PdSe_(2) film sensor combined with deep learning technology,we achieved intelligent recognition of artery temperature from arterial pulse signals with only a 2%difference between predicted and actual *** excellent sensing performance,together with the advantages of low-temperature fabrication and simple device structure,make the PdSe_(2) film sensor promising for wearable electronics and health care sensing systems.

关键词： layered crystal PdSe_(2) piezoresistive effect strain sensor

反应溅射TiW_yN_x薄膜扩散势垒特性研究

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Journal of Semiconductors 1993年第11期14卷 702-707,T001页

作者：张国炳武国英徐立郝一龙隋小平 A.P.Clarke P.J.Clarke M.D.Strathman T.Gates S.Baumann 北京大学微电子学研究所北京100871 sputtered films incorporated USA Chales Evans & Associates USA

本文利用XRD、RBS、AES、SEM和电学测量技术系统地研究了反应溅射制备的TiW_yN_x薄膜的组份、结构和扩散势垒特性,实验结果表明,膜的组份、结构和特性受溅射时N_2流量影响和溅射功率的影响,这种TiW_yN_x膜经550℃30分钟退火后,仍能有效... 详细信息

本文利用XRD、RBS、AES、SEM和电学测量技术系统地研究了反应溅射制备的TiW_yN_x薄膜的组份、结构和扩散势垒特性,实验结果表明,膜的组份、结构和特性受溅射时N_2流量影响和溅射功率的影响,这种TiW_yN_x膜经550℃30分钟退火后,仍能有效防止Al-Si扩散,从而改善了Al/TiW_yN_x/CoSi_2/Si浅结接触的热稳定性。

关键词： TiWN薄膜扩散反应溅射集成电路

Co-occurrence of Dominant Direct and Indirect Transitions in Low Temperature sputtered Indium Tin Oxide Thin films on Polymers

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Chinese Physics Letters 2010年第8期27卷 186-189页

作者：殷学松唐武翁小龙邓龙江 State Key Laboratory of Electronic Thin films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054

Indium tin oxide （ITO） layers are prepared on polymethylmethacrylate and polyethylene terephthalate by rf- magnetron sputtering at room temperature. Their 3D-AFM images and visible transmittance spectra are contrastively characterized and studied. An interesting morphological effect of the polymer substrates on their top ITO layers is observed. Dominant direct and indirect transition types deduced from optical spectra are surprisingly found in ITO films on different polymers. Furthermore, qualitative band structures are figured, and some theoretical discussions about the correlation of optical band structure, interface/surface morphology and carrier density are also presented.

关键词： Layering Polymerization Polymers

Effect of Al_2O_3 Buffer Layers on the Properties of sputtered VO_2 Thin films

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Nano-Micro Letters 2017年第3期9卷 52-59页

作者： Dainan Zhang Tianlong Wen Ying Xiong Donghong Qiu Qiye Wen State Key Laboratory of Electronic films and Integrated Devices University of Electronic Science and Technology of China Department of Electrical and Computer Engineering University of Delaware

VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.

关键词： Al2O3 Buffer layers Atomic layer deposition VO2 thin films Heterostructure

Fabrication and Properties of DC Magnetron sputtered Indium Tin Oxide on Flexible Plastic Substrate

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Journal of Materials Science & Technology 2009年第1期25卷 119-122页

作者： Hui Lin Junsheng Yu Nana Wang Shuangling Lou Yadong Jiang State Key Laboratory of Electronic Thin films and Integrated Devices School of Optoelectronic Information University of Electronic Science and Technology of China （UESTC） Chengdu 610054 China

Indium tin oxide （ITO） thin films deposited on flexible polyethylene terephthalate （PET） substrates at low temperature by DC magnetron sputtering from an In-Sn （90-10 wt pct） alloy target were studied. The correla- tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes （FOLEDs）. The fabricated FOLEDs with a structure of PET/ITO/NPB （50 nm）/Alq （20 nm）/Mg：Ag （100 nm） showed a maximum luminance of 2125 cd/m^2 at 13 V.

关键词： Flexible Organic light-emitting diodes Indium tin oxide DC sputtering

Optical and electrical properties of InGaZnON thin films

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Chinese Physics B 2020年第1期29卷 475-481页

作者： Jian Ke Yao Fan Ye Ping Fan Shenzhen Key Laboratory of Advanced Thin films and Applications College of Physics and EnergyShenzhen UniversityShenzhen 518060China

The substrate temperature(Ts)and N2 partial pressure(PN2)dependent optical and electrical properties of sputtered InGaZnON thin films are *** the increased Ts and PN2,the thin film becomes more crystallized and *** Hall mobility,free carrier concentration(Ne),and electrical conductivity increase with the lowered interfacial potential barrier during crystal *** photoluminescence(PL)intensity decreases with the increased *** band gap(Eg)narrows and the linear refractive index(n1)increases with the increasing concentration of N in the thin *** Stokes shift between the PL peak and absorption edge decreases with *** n1,dispersion energy,average oscillator wavelength,and oscillator length strength all increase with *** single oscillator energy decreases with *** nonlinear refractive index and third order optical susceptibility increase with *** Seebeck coefficient,electron effective mass,mean free path,scattering time,and plasma energy are all Ne dependent.

关键词： InGaZnON thin films linear and nonlinear optical properties Seebeck coefficient electron effective mass

Numerical shaper optimization for sputtered optical precision filters

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Chinese Optics Letters 2013年第13期11卷 36-39页

作者： Andreas Pflug Michael Siemers Thomas Melzig Daniel Rademacher Tobias Zickenrott Michael Vergohl Fraunhofer Institute for Surface Engineering and Thin films IST Bienroder Weg 54e 38108 Braunschweig Germany

A novel optimization procedure for optical precision sputter coaters with respect to the film homogeneity is demonstrated. For a coater concept based on dual cylindrical sputtering sources and a rotating turn-table as sample-holder, the inherent radial decay of the film thickness must be compensated by shaper elements. For that purpose, a simulation model of the particle flux within such a coater is set up and validated against experimental data. Subsequently, the shaper design is optimized according to the modeled metal flux profile. The resulting film thickness deviations are minimized down to ±0.3.5%

关键词： 000.3860 Mathematical methods in physics 000.4430 Numerical approximation and analysis 240.0310 Thin films 310.1860 Deposition and fabrication

Metal Organic Deposition of Lanthanum Zirconate Buffer Layer on Biaxially Textured Ni-5%W Substrate

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稀有金属材料与工程 2011年第S3期40卷 306-310页

作者： Guo Pei, Zhao Xiaohui, Xiong Jie, Xia Yudong, Jing Tongguo, Chen Jue,Zhang Ning, Zhang Fei, Tao Bowan, Li Yanrong State Key Laboratory of Electronic Thin films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu,610054,China Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Peoples R China

In this study,a simple template consisted of Y2O3 and La2Zr2O7 (LZO) layers was fabricated on rolling assisted biaxially textured Ni-5at%W substrates for YBa2Cu3O7-δ (YBCO) coated conductors.A thin sputtered Y2O3 layer (～20 nm) was introduced as a seed layer in order to induce epitaxial growth of metal organic deposited LZO *** effects of Y2O3 layer,annealing temperature and dwelling time on the phase and texture of the LZO films were systematically investigated.X-ray diffraction exhibited that the LZO films were purely c-axis-oriented with full width at half maximum value of out-of-plane and in-plane less than 4° and 6° *** force microscope analysis indicated the surface of such films was smooth,dense and crack-free.1.2μm-thick YBCO films were prepared directly on this 2-layer template with a critical current density of 0.58 MA/cm2 at 77 K and self field and Ic value of 70 A/cm-width,indicating a combination of LZO/Y2O3 is a promising buffer architecture for low cost production of high performance coated conductors.

关键词： La2Zr2O7 buffer layer MOD YBCO coated conductors

Etching mechanism of barium strontium titanate (BST) thin films in CHF_3/Ar plasma

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Chinese Science Bulletin 2011年第21期56卷 2267-2271页

作者： DAI LiPing WANG ShuYa SHU Ping ZHONG ZhiQin WANG Gang ZHANG GuoJun State Key Laboratory of Electronic Thin films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

Reactive ion etching was used to etch barium strontium titanate thin films in a CHF3/Ar *** surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism,and chemical reactions had occurred between the F plasma and the Ba,Sr and Ti metal *** of these metals were formed and remained on the surface during the etching *** was almost completely removed because the TiF4 by-product is *** quantities of Ti?F could still be detected by narrow scan X-ray photoelectron spectra,and Ti?F was thought to be present in the form of a *** species were investigated from O1s spectra,and a fluoride-rich surface was formed during ***2 and SrF2 residues were difficult to remove because of their high boiling *** etching rate was limited to 12.86 nm/min.C?F polymers were not found on the surface,indicating that the removal of BaF2 and SrF2 was important for further etching.A 1-min Ar/15 plasma physical sputtering was carried out for every 4 min of surface etching,which effectively removed remaining surface *** chemical reaction and sputtered etching is an effective etching method for barium strontium titanate films.

关键词：钛酸锶钡薄膜等离子蚀刻 BST 机制 X射线光电子能谱反应离子刻蚀 BaF2晶体金属氟化物