Etching mechanism of barium strontium titanate (BST) thin films in CHF_3/Ar plasma

作     者：DAI LiPing WANG ShuYa SHU Ping ZHONG ZhiQin WANG Gang ZHANG GuoJun 

作者机构：State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu 610054China 

出 版 物：《Chinese Science Bulletin》 (Chinese Science Bulletin)

年 卷 期：2011年第56卷第21期

页      面：2267-2271页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the University of Electronic Science and Technology of China (Y02002010301045) the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (kFJJ200909) 

主　　题：钛酸锶钡薄膜 等离子蚀刻 BST 机制 X射线光电子能谱 反应离子刻蚀 BaF2晶体 金属氟化物 

摘      要：Reactive ion etching was used to etch barium strontium titanate thin films in a CHF3/Ar *** surfaces before and after etching were analyzed by X-ray photoelectron spectroscopy to investigate the reaction ion etching mechanism,and chemical reactions had occurred between the F plasma and the Ba,Sr and Ti metal *** of these metals were formed and remained on the surface during the etching *** was almost completely removed because the TiF4 by-product is *** quantities of Ti?F could still be detected by narrow scan X-ray photoelectron spectra,and Ti?F was thought to be present in the form of a *** species were investigated from O1s spectra,and a fluoride-rich surface was formed during ***2 and SrF2 residues were difficult to remove because of their high boiling *** etching rate was limited to 12.86 nm/min.C?F polymers were not found on the surface,indicating that the removal of BaF2 and SrF2 was important for further etching.A 1-min Ar/15 plasma physical sputtering was carried out for every 4 min of surface etching,which effectively removed remaining surface *** chemical reaction and sputtered etching is an effective etching method for barium strontium titanate films.