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Reconciled estimation of Antarctic ice sheet mass balance and contribution to global sea level change from 1996 to 2021

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Science China Earth sciences 2024年

作者： Rongxing LI Guojun LI Gang HAI Huan XIE Yuan CHENG Wei CHEN Xiangbin CUI Minghu DING Chunchun GAO Tong HAO Changqing KE Chuanjin LI Jin LI Yan LIU Jiangjun RAN Jiawen REN Qiang SHEN Yunzhong SHEN Hongling SHI Songyun WANG Zemin WANG Jingang ZHAN Baojun ZHANG Min ZHONG Chunxia ZHOU State Key Laboratory of Remote Sensing Science Faculty of Geographical Science Beijing Normal University Department of Earth and Space sciences Southern University of Science and Technology State Key Laboratory of Cryospheric Science Northwest Institute of Eco-Environment and Resources Chinese Academy of Sciences State Key Laboratory of Geodesy and Earth's Dynamics Innovation Academy for Precision Measurement Science and TechnologyChinese Academy of Sciences Center for Space Research University of Texas at Austin chinese Antarctic Center of Surveying and Mapping Wuhan University School of Geospatial Engineering and Science Sun Yat-sen University Center for Spatial information Science and Sustainable Development Applications Tongji University College of Surveying and Geo-informatics Tongji University institute for the Conservation of Cultural Heritage School of Cultural Heritage and Information Management Shanghai University College of Resource Environment and Tourism Hubei University of Arts and Science Polar Research institute of China State Key Laboratory of Severe Weather Chinese Academy of Meteorological Sciences College of Geodesy and Geomatics Shandong University of Science and Technology School of Geography and Ocean Science Nanjing University shanghai Astronomical Observatory Chinese Academy of Sciences

The Antarctic Ice Sheet（AIS） has been losing ice mass and contributing to global sea level rise（GSLR）. Given its mass that is enough to cause ～58 m of GSLR, accurate estimation of mass balance trend is critical for AIS mass loss monitoring and sea level rise forecasting. Here, we present an improved approach to reconciled solutions of mass balance in AIS and its regions from multiple contributing solutions using the input-out, altimetric, and gravimetric methods. In comparison to previous methods, such as IMBIE 2018, this approach utilizes an adaptive data aggregation window to handle the heterogeneity of the contributing solutions, including the number of solutions, temporal distributions, uncertainties, and estimation techniques. We improved the regression-based method by using a two-step procedure that establishes ensembled solutions within each method（input-output, altimetry, or gravimetry） and then estimates the method-independent reconciled solutions. For the first time, 16contributing solutions from 8 chinese institutions are used to estimate the reconciled mass balance of AIS and its regions from1996 to 2021. Our results show that AIS has lost a total ice mass of ～3213±253 Gt during the period, an equivalent of～8.9±0.7 mm of GSLR. There is a sustained mass loss acceleration since 2006, from 88.1±3.6 Gt yr-1during 1996–2005 to 130.7±8.4 Gt yr-1during 2006–2013 and further to 157.0±9.0 Gt yr-1during 2014–2021. The mass loss signal in the West Antarctica and Antarctic Peninsula is dominant and clearly presented in the reconciled estimation and contributing solutions, regardless of estimation methods used and fluctuation of surface mass balance. Uncertainty and challenges remain in mass balance estimation in East Antarctica. This reconciled estimation approach can be extended and applied for improved mass balance estimation in the Greenland Ice Sheet and mountain glacier regions.

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Effect of combinative addition of strontium and rare earth elements on corrosion resistance of AZ91D magnesium alloy

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中国有色金属学会会刊：英文版 2008年第5期18卷 1058-1064页

作者：钮洁欣陈秋荣徐乃欣卫中领 shanghai institute of microsystem and information technology Chinese Academy of Sciences

The influence of strontium(Sr) and rare earth(RE) elements on the corrosion behavior of AZ91D magnesium alloy was investigated by conventional corrosion testing and electrochemical measurements in 3.5% NaCl *** comparing the mass loss and hydrogen evolution of the samples,the microstructures of the alloys and the morphologies of their corrosion product films were characterized by electron probe microanalysis-energy dispersive spectrometry(EPMA-EDS) and Auger electron spectroscopy(AES).Compared with individual addition of Sr or RE to AZ91D,the combinative addition of 0.5% Sr and 1% RE to AZ91D successfully decreases the corrosion rate further,which can be attributed to the depression of micro-galvanic couples,as well as the formation of more protective film due to aluminum *** combinative addition of strontium and rare earth elements to AZ91D magnesium alloy appears to be a promising approach to increase its corrosion resistance.

关键词：锶稀土元素 AZ91D合金腐蚀作用微结构

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A 400MHz Single-Chip CMOS Transceiver for Long Range High Definition Video Transmission in UAV Application

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chinese Journal of Electronics 2020年第3期29卷 554-562页

作者： HUANG Shuigen LIN Min WANG Ruoyu CHEN Zhuojun DONG Yemin shanghai institute of microsystem and information technology Chinese Academy of Sciences shanghai University

A fully-integrated 400MHz transceiver for high definition video transmission in Unmanned aerial vehicle（UAV） is presented. The transceiver integrates a Receiver（RX）, a Transmitter（TX）, a tunable multi-mode complex filter, two sigma-delta fractional-N PLL frequency synthesizers and some baseband calibration circuits, which is applicable for both Time division duplex（TDD） and Frequency division duplex（FDD） systems. In order to meet different data rate and sensitivity requirements for control signal and video signal transmission, the transceiver supports BPSK/QPSK/QAM *** receiver sensitivity is –75dBm and the transmitter provides emission power up to 12dBm. Besides, the Error vector magnitude（EVM） of –35dB is measured under 64QAM modulation with 54Mbps data *** in a standard 130nm CMOS process and operated at 1.2V supply for most circuits excluding PA,3.3V supply for PA, the receiver and the transmitter consume 68.2mW and 164.3mW, including the frequency synthesizer, respectively. The total chip area with pads is 6.25 mm;.

关键词： CMOS Transceiver Unmanned aerial vehicle(UAV) Wireless video transmission

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Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

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chinese Physics B 2015年第8期24卷 605-608页

作者：吕凯陈静罗杰馨何伟伟黄建强柴展王曦 shanghai institute of microsystem and information technology Chinese Academy of Sciences

The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.

关键词： silicon-on-insulator(SOI) back gate bias tunnel diode body contact radio-frequency(RF)

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Total dose radiation effects on SOI NMOS transistors with different layouts

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chinese Physics C 2008年第8期32卷 645-648页

作者：田浩张正选贺威俞文杰王茹陈明 shanghai institute of microsystem and information technology Chinese Academy of Sciences

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor （SOI NMOS） transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen （SIMOX） substrate and tested using 10 keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10^6 rad（Si）. The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

关键词： SIMOX SOI total dose radiation effect MOS transistors

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Impact of substrate bias on radiation-induced edge effects in MOSFETs

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chinese Physics B 2011年第12期20卷 181-186页

作者：胡志远刘张李邵华张正选宁冰旭陈明毕大炜邹世昌 shanghai institute of microsystem and information technology Chinese Academy of Sciences Graduate University of the chinese academy of sciences

This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation （STI） leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias, Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

关键词： ionizing radiation shallow trench isolation trapped charge total dose effects

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COP 28: Challenge of coping with climate crisis

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The Innovation 2024年第1期5卷 21-22页

作者： Tong Jiang Xiaojia He Buda Su Peni Hausia Havea Ke Wei Zbigniew W.Kundzewicz Dong Liu Research institute of Climatic and Environmental Governance/institute for Disaster Risk Management School of Geographical ScienceNanjing University of Information Science&TechnologyNanjing 210044China The Administrative Center for China’s Agenda 21 Beijing 100038China Pacific Global Solution Nuku’alofaTongatapu 000676Tonga Centre for Monsoon System Research Institute of Atmospheric PhysicsChinese Academy of SciencesBeijing 100029China Department of Environmental Engineering and Mechanical Engineering Poznan University of Life Sciences60-637 PoznanPoland The Paper Shanghai United Media GroupShanghai 200040China

The 28th Conference of Parties(COP 28)of the United Nations Framework Convention on Climate Change(UNFCCC)is being held in Dubai,United Arab Emirates,from November 30 to December 12,2023,with the participation of over 160 world leaders(Figure 1).The tone of the COP 28 is set by the observation that,clearly,the nationally determined contributions related to CO_(2) emission reduction are not on track to curb the temperature rise as per the Paris *** order to hold the increase in global mean temperature to well below 2℃ above the pre-industrial level and to pursue efforts to limit the warming to 1.5℃,there is a need for ratcheting up ambition for near-term climate action.

关键词： Figure limit COP

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Investigation of SiGe-on-Insulator Novel Structure

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Journal of Rare Earths 2004年第z2期22卷 13-16页

作者： Lin Chenglu Liu Weili An Zhenghua Di Zengfeng Zhang Miao shanghai institute of microsystem and information technology Chinese Academy of SciencesShanghai 200050China shanghai SIMGUI technology Co. LtdShanghai Jiading 201821China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China shanghai SIMGUI technology Co. LtdShanghai Jiading 201821China

SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si.

关键词： SGOI SIMOX SOI strained Si

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An InGaAs/InP 40 GHz CML static frequency divider

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Journal of Semiconductors 2011年第3期32卷 127-130页

作者：苏永波金智程伟葛霁王显泰陈高鹏刘新宇徐安怀齐鸣 institute of Microelectronics Chinese Academy of Sciences shanghai institute of microsystem and information technology Chinese Academy of Sciences

Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal *** report a 2：1 static frequency divider in InGaAs/InP heterojunction bipolar transistor *** is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic（CML） with 30 *** circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply.

关键词： InP DHBT static frequency divider

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Ultra high-speed InP/InGaAs DHBTs with f_t of 203 GHz

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Journal of Semiconductors 2009年第1期30卷 16-18页

作者：苏永波金智程伟刘新宇徐安怀齐鸣 institute of Microelectronics Chinese Academy of Sciences shanghai institute of microsystem and information technology Chinese Academy of Sciences

InP/InGaAs/InP double heterojunction bipolar transistors （DHBTs） were designed for wide band digital and analog circuits, and fabricated using a conventional mesa structure with benzocyclobutene （BCB） passivation and planarization process techniques. Our devices exhibit a maximum ft of 203 GHz, which is the highest ft for DHBTs in China's Mainland. The emitter size is 1.0 × 20μm^2. The DC current gain β is 166, and BVCEO = 4.34 V. The devices reported here employ a 40 nm highly doped InGaAs base region and a 203 nm InGaAsP composite structure. They are suitable for high speed and intermediate power applications.

关键词： InP DHBT BCB passivation

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