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Investigation of SiGe-on-Insulator Novel Structure

Investigation of SiGe-on-Insulator Novel Structure

作     者:Lin Chenglu Liu Weili An Zhenghua Di Zengfeng Zhang Miao 

作者机构:Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai SIMGUI Technology Co.LtdShanghai Jiading 201821China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai SIMGUI Technology Co.LtdShanghai Jiading 201821China 

出 版 物:《Journal of Rare Earths》 (稀土学报(英文版))

年 卷 期:2004年第22卷第Z2期

页      面:13-16页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 080503[工学-材料加工工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 

基  金:Project supported by the Special Funds for Major State Basic Research Projects (G20000365) The National Natural Science Foundation of China under (60201004, 90101012) and the Shanghai Special Foundation for Nanotechnology Project (0252nm084 and 0359nm204) 

主  题:SGOI SIMOX SOI strained Si 

摘      要:SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si.

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