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Tunable magnetism and band structure in kagome materials RETi3Bi4 family with weak interlayer interactions

science Bulletin 2024年第17期69卷 2660-2664页

作者： Jingwen Guo Liqin Zhou Jianyang Ding Gexing Qu Zhengtai Liu Yu Du Heng Zhang Jiajun Li Yiying Zhang Fuwei Zhou Wuyi Qi Minghui Cui Yongxin Zhang Fengyi Guo Tianqi Wang Fucong Fei Yaobo Huang Tian Qian Dawei Shen You Song Hongming Weng Fengqi Song National Laboratory of Solid State microstructures School of PhysicsSchool of Materials Science and Intelligent EngineeringCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of sciences Beijing 100049China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology(SIMIT)Chinese Academy of SciencesShanghai 200050China Shanghai Synchrotron Radiation Facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201210China State Key Laboratory of Coordination Chemistry School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Atom Manufacturing Institute Nanjing 211806China National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China Songshan Lake Materials Laboratory Dongguan 523808China

Kagome lattice,characterized by two-dimensional honeycomb network of corner-sharing triangles[1],presents flat bands,Dirac cones,and van Hove singularities(VHSs),which have been theoretically predicted and experimentally observed[2-4].When combined with spin-orbit coupling(SOC)and magnetism,novel properties have *** kagome materials vary,most of their strong interlayer interactions make the synthesized crystals not layered,and the properties deviating from the raw two-dimensional kagome *** crystals are difficult to fabricate into thin devices and to tune the physical properties of the materials using gate voltage.

关键词： network interlayer structure

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Observation of Shubnikov-de Haas Oscillations in Large-Scale Weyl Semimetai WTe2 Films

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Chinese Physics Letters 2020年第1期37卷 64-68页

作者： Yequan Chen Yongda Chen Jiai Ning Liming Chen Wenzhuo Zhuang Liang He Rong Zhang Yongbing Xu Xuefeng Wang Jiangsu Provincial Key Laboratory of advanced Photonic and electronic Materials School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093

Topological Weyl semimetal WTe2 with large-scale Him form has a promising prospect for new-generation spintronic ***,it remains a hard task to suppress the defect states in large-scale WTe2 films due to the chemical *** we significantly improve the crystalline quality and remove the Te vacancies in WTe2 films by post *** observe the distinct Shubnikov-de Haas quantum oscillations in WTe2 *** nontrivial Berry phase can be revealed by Landau fan diagram *** Hall mobility of WTe2 films can reach 1245cm^2V^-1s^-1 and 1423cm^2V^-1s^-1 for holes and electrons with the carrier density of 5× 10^19 cm^-3 and 2 × 10^19 cm^-3,*** work provides a feasible route to obtain high-quality Weyl semimetal films for the future topological quantum device applications.

关键词： quantum nontrivial remove

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Passive Quenching electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

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Chinese Physics Letters 2015年第12期32卷 163-166页

作者：刘飞周东陆海陈敦军任芳芳张荣郑有炓 Jiangsu Provincial Key Laboratory of advanced Photonic and electronic Materials and School of Electronic Science and Engineering Nanjing University Nanjing 210093 collaborative innovation center of advanced microstructures Nanjing 210093

We design and fabricate 4H-SiC UV avalanche photodiodes （APDs） ~qth positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.

关键词： SiC APD Passive Quenching electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

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engineering in-plane silicon nanowire springs for highly stretchable electronics

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Journal of Semiconductors 2018年第1期39卷 2-15页

作者： Zhaoguo Xue Taige Dong Zhimin Zhu Yaolong Zhao Ying Sun Linwei Yu National Laboratory of Solid State microstructures/school of electronic science and engineering/collaborative innovation center of advanced microstructures Nanjing University

Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional（1 D） geometry, or the line-shape, of Si nanowire（SiNW） can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1 D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquidsolid（IPSLS） mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited.

关键词： c-Si nanowires in-plane solid-liquid-solid self-assembly stretchable electronics

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High-pressure phases of Weyl semimetals NbP, NbAs, TaP,and TaAs

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science China(Physics,Mechanics & Astronomy) 2018年第3期61卷 47-55页

作者： ZhaoPeng Guo PengChao Lu Tong Chen JueFei Wu Jian Sun DingYu Xing National Laboratory of Solid State microstructures School of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing University

In this study, we used the crystal structure search method and first-principles calculations to systematically explore the highpressure phase diagrams of the TaAs family （NbP, NbAs, TaP, and TaAs）. Our calculation results show that NbAs and TaAs have similar phase diagrams, the same structural phase transition sequence I41md→Pδm2→}P21/c→Pm3m, and slightly different transition pressures. The phase transition sequence of NbP and TaP differs somewhat from that of NbAs and TaAs, in which new structures emerge, such as the Cmcm structure in NbP and the Pmmn structure in TaP. Interestingly, we found that in the electronic structure of the high-pressure phase Pδm2-NbAs, there are coexisting Weyl points and triple degenerate points, similar to those found in high-pressure Pδm2-TaAs.

关键词： high pressure phase transition crystal structure prediction topological materials Dirac/Weyl/node-line semimetals Fermi arc

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Field-effect transistor memories based on ferroelectric polymers

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Journal of Semiconductors 2017年第11期38卷 1-14页

作者： Yujia Zhang Haiyang Wang Lei Zhang Xiaomeng Chen Yu Guo Huabin Sun Yun Li school of electronic science and engineering National Laboratory of Solid-State Microstructures Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China

Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors（Fe-FETs） in non-volatile memory applications.

关键词： ferroelectric polymers field-effect transistor memories ferroelectricity

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Evidence of anisotropic Landau level splitting in topological semimetal ZrSiS under high magnetic fields

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Frontiers of physics 2019年第6期14卷 83-87,F0004页

作者： Jun-Ran Zhang Bo Liu Ming Gao Yong-Bing Xu Rong Zhang Jiangsu Provincial Key Laboratory of advanced Photonic and electronic Materials Collaborative Innovation Center of Advanced MicrostructuresSchool of Electronic Science and EngineeringNanjing UniversityNanjing 210023China

Magneto-transport study has been performed in topological semimetal ZrSiS single crystals under high pulsed magnetic *** dependence of Landau level splitting on temperature and angular was *** strong three-dimensional anisotropic nature of Landau level splitting under high pulsed magnetic fields was revealed by the angular dependent measurements,in which the orbital contribution is more dominant than Zeeman *** studies provide more insights into the physical properties of topological semimetals ZrSiS and shed light on future spintronic applications of ZrSiS.

关键词： topological semimetal Landau level splitting high magnetic field

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From lab to fab: path forward for 2D material electronics

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science China(Information sciences) 2023年第6期66卷 115-121页

作者： Hongkai NING Zhihao YU Taotao LI Haoliang SHEN Gen LONG Yi SHI Xinran WANG National Laboratory of Solid State microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing University school of Integrated Circuits Nanjing University College of Integrated Circuit science and engineering Nanjing University of Posts and Telecommunications Suzhou Laboratory

The increasing demand for computation requires the development of energy-efficient logic devices with reduced dimensions. Owing to their atomic thickness, 2D semiconductors are expected to provide possible solutions at the sub-1 nm technology node. Furthermore, taking advantage of the van der Waals nature, the low-temperature back-end of line integration with silicon may occur in the near future. In this perspective, vital progress in material synthesis, device engineering, and integration technologies toward integrated circuits based on 2D materials is reviewed. The challenges and important milestones on the roadmap for the next decade toward the fab adoption of 2D materials are outlined. Particularly, performance,power, area, cost, and equipment for further technology development in this area are proposed as key metrics and enablers.

关键词： two-dimensional materials transition-metaldichalcogenides equipment integrated circuits roadmap

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Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe

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Chinese Physics Letters 2017年第2期34卷 67-70页

作者： Ke-Jie Wang Wei Wang Min-Hao Zhang Xiao-Qian Zhang Pei Yang Bo Liu Ming Gao Da-Wei Huang Jun-Ran Zhang Yu-Jie Liu Xue-Feng Wang Feng-Qiu Wang Liang He Yong-Bing Xu Rong Zhang Jiangsu Provincial Key Laboratory of advanced Photonic and electronic Materials Jiangsu Provincial Key Laboratory for NanotechnologyCollaborative Innovation Center of Advanced MicrostructuresSchool of Electronic Science and EngineeringNanjing UniversityNanjing 210093

Topological crystalline insulators （TCIs） have attracted worldwide interest since their theoretical predication and have created exciting opportunities for studying topological quantum physics and for exploring spintronic appli- cations. In this work, we successfully synthesize PbTe nanowires via the chemical vapor deposition method and demonstrate the existence of topological surface states by their 2D weak anti-localization effect and Shubnikov-de Haas oscillations. More importantly, the surface state contributes ~61% of the total conduction, suggesting dom- inant surface transport in PbTe nanowires at low temperatures. Our work provides an experimental groundwork for researching TCIs and is a step forward for the applications of PbTe nanowires in spintronic devices.

关键词： Weak Anti-Localization and Quantum Oscillations in Topological Crystalline Insulator PbTe length

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Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

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Chinese Physics Letters 2015年第8期32卷 196-199页

作者：刘飞杨森周东陆海张荣郑有炓 Jiangsu Provincial Key Laboratory of advanced Photonic and electronic Materials and School of Electronic Science and Engineering Nanjing University Nanjing 210093 collaborative innovation center of advanced microstructures Nanjing 210093

In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode （APD） is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.

关键词： SiC APD Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

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