Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

作     者：刘飞 杨森 周东 陆海 张荣 郑有炓 

作者机构：Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing University Nanjing 210093 Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2015年第32卷第8期

页      面：196-199页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB301900 and 2011CB922100 the Priority Academic Program Development of Jiangsu Higher Education Institutions 

主　　题：SiC APD Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes 

摘      要：In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode （APD） is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed.