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Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

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Journal of semiconductors 2024年第5期45卷 90-98页

作者： Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State Key Discipline Laboratory of wide band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device

Theoretical understanding of correlation between magnetic phase transition and the superconducting dome in high-Tc cuprates

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Science China(Physics,Mechanics & Astronomy) 2024年第2期67卷 167-173页

作者： Chen Zhang Cai-Xin Zhang Su-Huai Wei Haiqing Lin Hui-Xiong Deng State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Computational Science research center Beijing 100193China

Many issues concerning the origin of high-temperature superconductivity(HTS)are still under *** example,how the magnetic order varies with doping and its relationship with the superconducting temperature(Tc);and why Tcalways peaks near the quantum critical *** this paper,taking hole-doped La_(2)CuO_(4)as a classical example,we employ the first-principles band structure and total energy calculations with Monte Carlo simulations to explore how the symmetry-breaking magnetic ground state evolves with hole doping and the origin of a dome-shaped superconductivity region in the phase *** demonstrate that the local antiferromagnetic order and doping play key roles in determining the electron-phonon coupling,thus ***,the La_(2)CuO_(4)possesses a checkerboard local antiferromagnetic ground *** the hole doping increases,Tcincreases with the enhanced electron-phonon coupling *** as the doping increases further,the strength of the antiferromagnetic interaction weakens and spin fluctuation *** the critical doping level,a magnetic phase transition occurs that reduces the local antiferromagnetism-assisted electron-phonon coupling,thus diminishing the *** superconductivity disappears in the heavily overdoped region when the ferromagnetic order *** observations could account for why cuprates have a dome-shaped superconductivity region in the phase *** study,thus,contributes to a fundamental understanding of the correlation between doping,local magnetic order,and superconductivity of HTS.

关键词： high-temperature superconductivity antiferromagnetic order electron-phonon coupling doping effect cuprates

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Science China(Information Sciences) 2024年第6期67卷 459-460页

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO State Key Laboratory of wide bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University Guangzhou wide bandgap Semiconductor Innovation center Guangzhou Institute of TechnologyXidian University State Key Laboratory of Integrated Services Networks School of Communication EngineeringXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and Ga As counterparts,and are prime candidates for applications in communicat...

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Silicon-based optoelectronic heterogeneous integration for optical interconnection

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Chinese Physics B 2024年第2期33卷 1-9页

作者：李乐良李贵柯张钊刘剑吴南健王开友祁楠刘力源 Institute of semiconductors Chinese Academy of SciencesBeijing 100083China center of Material Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The performance of optical interconnection has improved dramatically in recent ***-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated *** paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical *** research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.

关键词： silicon-based heterogeneous integration heterogeneous integrated materials heterogeneous integrated packaging optical interconnection

980 nm Near-Infrared Light-Emitting Diode Using All-Inorganic Perovskite Nanocrystals Doped with Ytterbium Ions

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Tsinghua Science and Technology 2024年第1期29卷 207-215页

作者： Zhenglan Ye Taoran Liu Dan Chen Yazhou Yang Jiayi Li Yaqing Pang Xiangquan Liu Yuhua Zuo Jun Zheng Zhi Liu Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Intelligent Network research Institute Zhejiang LabHangzhou 311100China

All-inorganic perovskite(CsPbX3)nanocrystals(NCs)have recently been widely investigated as versatile solution-processable light-emitting *** to its wide-bandgap nature,the all-inorganic perovskite NC Light-Emitting Diode(LED)is limited to the visible region(400-700 nm).A particularly difficult challenge lies in the practical application of perovskite NCs in the infrared-spectrum *** this work,a 980 nm NIR all-inorganic perovskite NC LED is demonstrated,which is based on an efficient energy transfer from wide-bandgap materials(CsPbCl3 NCs)to ytterbium ions(Yb3+)as an NIR emitter doped in perovskite *** optimized CsPbCl3 NC with 15 mol%Yb3+doping concentration has the strongest 980 nm photoluminescence(PL)peak,with a PL quantum yield of 63%.An inverted perovskite NC LED is fabricated with the structure of ITO/PEDOT:PSS/poly-TPD/CsPbCl3:15 mol%Yb3+NCs/TPBi/LiF/*** LED has an External Quantum Efficiency(EQE)of 0.2%,a Full Width at Half Maximum(FWHM)of 47 nm,and a maximum luminescence of 182 cd/m?.The introduction of Yb3+doping in perovskite NCs makes it possible to expand its working wavelength to near-infrared band for next-generation light sources and shows potential applications for optoelectronic integration.

关键词： perovskite nanocrystals rare-earth doping Light-Emitting Diode(LED) near-infrared optical interconnection

Enhanced visible-light photocatalytic hydrogen evolution using two-dimensional carbon nitride sheets with the removal of amine groups

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Chinese Chemical Letters 2024年第2期35卷 446-450页

作者： Yu Zhang Liting Wu Shaopeng Wang Dingyi Yang Huan Liang Yizhang Wu Jian Hao Youqing Wang Jianke Liu Yong Wang Department of Physics Shaanxi University of Science and TechnologyXi'an 710021China School of Advanced Materials and Nanotechnology Academy of Advanced Interdisciplinary ResearchXidian UniversityXi'an 710126China The State Key Discipline Laboratory of wide band Gap Semiconductor Technology Xidian UniversityXi'an 710126China Collaborative Innovation center of Advanced Microstructures National Laboratory of Solid State MicrostructuresNanjing UniversityNanjing 210093China State Key Laboratory of High-Efficiency Utilization of Coal and Green Chemical Engineering Ningxia UniversityYinchuan 750021China

Two-dimensional(2D)carbon nitride sheets(CNs)with atomically thin structures are regarded as one of the most promising materials for solar energy ***,due to their substantially enlarged bandgap caused by the strong quantum size effect and their incomplete polymerisation with a large number of non-condensed surface amino groups,the practical applicability of CNs in photocatalysis is *** this study,CNs with broad visible-light absorption were synthesised using a 5-min fast thermal *** removal of uncondensed amine groups reduces the bandgap of CNs from 3.06 eV to 2.60 eV,increasing their absorption of visible ***,the CNs were distorted after annealing,which can differentiate the spatial positions of electrons and holes,enhancing the visible-light absorption *** a result,when exposed to visible light,the photocatalytic hydrogen production activity of atomically thin 2D CNs rose by 8.38 *** research presents a dependable and speedy method for creating highly effective visible-light photocatalysts with narrowed bandgaps and improved visible-light absorption.

关键词： 2D carbon nitride sheets Rapid thermal annealing DFT calculations Visible-light absorption visible-light photocatalysis

阻变行为可调控的物理瞬态异质结构忆阻器及安全神经网络构建（英文）

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Science China Materials 2024年

作者：孙静王湛王欣媛周颖王晏婷何云龙雷毅敏王宏马晓华 School of Advanced Materials and Nanotechnology Xidian University National Engineering research center of wide band-gap Semiconductor Xidian University School of Electronic Engineering Xi'an University of Posts & Telecommunications

作为生物体的重要指挥中心,大脑能够通过神经网络执行多种智能交互,包括记忆、学习和认知.近年来,基于忆阻器实现的人工突触和人工神经元构建神经网络作为一种极具前景的技术,已经得到了广泛的研究.然而,人工智能设备中的多重信息交互...

作为生物体的重要指挥中心,大脑能够通过神经网络执行多种智能交互,包括记忆、学习和认知.近年来,基于忆阻器实现的人工突触和人工神经元构建神经网络作为一种极具前景的技术,已经得到了广泛的研究.然而,人工智能设备中的多重信息交互对信息安全构成潜在威胁.本文提出了物理瞬态形式的异质结构Ag/MgO/SiNx/W忆阻器,通过调整SiNx层的厚度分别实现了可重构阻变特性和易失性阈值开关特性,并从导电细丝的形成及其界面迁移特点出发阐述了该忆阻器的阻变机制.代表性的神经功能包括短时可塑性、短时可塑性向长期可塑性的转化以及神经元的整合-放电等神经拟态功能均可基于该忆阻器进行形象模拟.此外,我们还探索了与器件瞬态行为相关的溶解动力学,并利用水辅助转移法在可溶于水的聚乙烯醇衬底上构建了瞬态形式的神经形态器件阵列,其在室温下的去离子水中浸泡10 s后就可完成物理形态的完全消失.该物理瞬态忆阻式神经形态器件对于人工神经网络应用中的信息安全加固具有重要意义.

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High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system

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Photonics research 2024年第4期12卷 767-773页

作者： JINLAI CUI JUN ZHENG YUPENG ZHU XIANGQUAN LIU YIYANG WU QINXING HUANG YAZHOU YANG ZHIPENG LIU ZHI LIU YUHUA ZUO BUWEN CHENG Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single *** this study,GeSn resonance cavity enhanced(RCE)photodetectors(PDs)with an active layer Sn component of 9%–10.8%were designed and fabricated on an SOI *** GeSn RCE PDs present a responsivity of 0.49 A/W at 2μm and a 3-dB bandwidth of approximately 40 GHz at 2μ***,Si-based 2μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE *** work demonstrates the considerable potential of the Si-based 2μm band photonics in future high-speed and high-capacity optical communication.

关键词： resonance system approximate

Multifunctional solar-blind ultraviolet photodetectors based on p-PCDTBT/n-Ga_(2)O_(3)heterojunction with high photoresponse

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InfoMat 2024年第2期6卷 118-130页

作者： Yifei Wang Zhenhua Lin Jingli Ma Yongyi Wu Haidong Yuan Dongsheng Cui Mengyang Kang XingGuo Jie Su Jinshui Miao Zhifeng Shi Tao Li Jincheng Zhang Yue Hao Jingjing Chang State Key Discipline Laboratory of wide band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'anthe People's Republic of China School of Physics and Microelectronics Key Laboratory of Material PhysicsMinistry of EducationZhengzhou UniversityZhengzhouthe People's Republic of China center for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of MaterialsDepartment of Materials Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China Advanced Interdisciplinary research center for Flexible Electronics Xidian UniversityXi'anthe People's Republic of China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghaithe People's Republic of China

Solar-blind ultraviolet(UV)photodetectors based on p-organic/n-Ga_(2)O_(3) hybrid heterojunctions have attracted extensive attention ***,the multifunctional solar-blind photodetector based on p-type poly[N-90-heptadecanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)](PCDTBT)/n-type amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))is fabricated and investigated,which can work in the phototransistor mode coupling with self-powered *** the introduction of PCDTBT,the dark current of such the a-Ga_(2)O_(3)-based photodetector is decreased to 0.48 ***,the photoresponse parameters of the a-Ga_(2)O_(3)-based photodetector in the phototransistor mode to solar-blind UV light are further increased,that is,responsivity(R),photo-detectivity(D*),and external quantum efficiency(EQE)enhanced to 187 A W^(-1),1.3×10^(16) Jones and 9.1×10^(4)% under the weak light intensity of 11μW cm^(-2),*** to the formation of the built-in field in the p-PCDTBT/n-Ga_(2)O_(3) type-Ⅱ heterojunction,the PCDTBT/Ga_(2)O_(3) multifunctional photodetector shows self-powered *** responsivity of p-PCDTBT/n-Ga_(2)O_(3) multifunctional photodetector is 57.5 mA W^(-1) at zero *** multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga_(2)O_(3) heterojunction-based photodetectors.

关键词： amorphous Ga_(2)O_(3) heterojunction multifunctional PCDTBT solar-blind photodetectors