Silicon-based optoelectronic heterogeneous integration for optical interconnection
Silicon-based optoelectronic heterogeneous integration for optical interconnection作者机构:Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Material Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2024年第33卷第2期
页 面:1-9页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学]
基 金:Project supported in part by the National Key Research and Development Program of China(Grant No.2021YFB2206504) the National Natural Science Foundation of China(Grant No.62235017) the China Postdoctoral Science Foundation(Grant No.2021M703125)
主 题:silicon-based heterogeneous integration heterogeneous integrated materials heterogeneous integrated packaging optical interconnection
摘 要:The performance of optical interconnection has improved dramatically in recent ***-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated *** paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical *** research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.