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Influence of selenium evaporation temperature on the structure of Cu_2ZnSnSe_4 thin film deposited by a co-evaporation process

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Journal of Semiconductors 2015年第4期36卷 74-77页

作者：孙顶许盛之张力陈泽葛阳王宁梁雪娇魏长春赵颖张晓丹 Institute of Photo electronics thin film Devices and Technology Nankai UniversityKey Laboratory of Photoelectronic Thin Film Devices and Technology

Cu2ZnSnSe4 （CZTSe） thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatures （TSe） have been investigated using X-ray diffraction spectra, scanning electron microscopy, and atomic force microscopy. A relationship between TSe and the secondary phases deposited in the initial stage is established to explain the experimental observations. The Se flux is not necessarily increased too much to reduce Sn loss and the consumption of Se during fabrication could also be reduced. The best solar cell, with an efficiency of 2.32%, was obtained at a medium Tse of 230 ℃ （active area 0.34 cm2）.

关键词： Cu2ZnSnSe4 one-step co-evaporation selenium flux thin film solar cells Sn loss

Improving metal reflectors by suppressing surface plasmon polaritons: a priori calculation of the internal reflectance of a solar cell

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Light(Science & Applications) 2013年第1期2卷 32-37页

作者： Zachary C Holman Stefaan De Wolf Christophe Ballif Swiss Federal Institute of Technology Lausanne(EPFL)Institute of Microengineering(IMT)Photovoltaics and Thin-Film Electronics LaboratoryCH-2000 NeuchaˆtelSwitzerland

Imperfect internal reflectance of near-bandgap light reduces the performance of all solar cells,and becomes increasingly detrimental as absorbers become *** consider light incident on the silicon/dielectric/metal structure at the back of rear-passivated crystalline silicon solar cells with surface textures that are large enough for geometric *** calculating the absorbance in the metal as a function of the angle of incidence,we discover three results that are important for understanding and improving rear reflectors in many types of solar ***,significant parasitic absorption occurs in the metal layer in two cases:s-and p-polarized propagating modes(near-normal angles of incidence)when the dielectric thickness is adjusted to cause destructive interference of the reflected beams,and p-polarized evanescent modes(angles of incidence above the semiconductor/dielectric critical angle)that excite surface plasmon polaritons at the metal ***,the latter loss dominates;a well-designed rear dielectric passivation layer must suppress the penetration of evanescent waves to the ***,when used as an input in a simple analytical model,the average rear internal reflectance calculated by assuming a Lambertian angular distribution of light accurately predicts the total reflectance and absorbance of a solar cell.

关键词： light trapping photovoltaics plasmon silicon solar cell

Numerical simulation of a triple-junction thin-film solar cell based on μc-Si_(1-x)Ge_x :H

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Chinese Physics B 2013年第9期22卷 680-685页

作者：黄振华张建军倪牮曹宇胡子阳李超耿新华赵颖 Institute of Photo-electronics thin film Devices and Technique Nankai University Key laboratory of Photo-electronics thin film Devices and Technique Key laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University

In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.

关键词： a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell simulation analyses of microelectronic andphotonic structures (AMPS-1D)

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

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Chinese Physics B 2010年第3期19卷 568-573页

作者：张晓丹张鹤魏长春孙建侯国付熊绍珍耿新华赵颖 Institute of Photo-electronics thin film Devices and Technique of Nankai University Key Laboratory of Photo-electronics Thin Film Devices and Technique of TianjinKey Laboratory of Photo-electronic Information Science and Technology(Nankai University)Ministry of Education

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.

关键词： high pressure and high power microcrystalline silicon heating effect

Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

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Chinese Physics B 2009年第10期18卷 4558-4563页

作者：张晓丹孙福和魏长春孙建张德坤耿新华熊绍珍赵颖 Institute of Photo-electronics Thin Film Devices and Technique of Nankai University Key Laboratory of Photo-ElectronicsThin Film Devices and Technique of Tianjin Key Laboratory of Photo-Electronic Information Science and Technology (Nankai University) Ministry of Education

This paper studies boron contamination at the interface between the p and i layers of μc-Si：H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μc-Si：H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μc-Si：H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.

关键词： boron contamination single chamber microcrystalline silicon solar cells

Influence of local environment on the intensity of the localized surface plasmon polariton of Ag nanoparticles

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Chinese Physics B 2010年第4期19卷 388-393页

作者：黄茜张晓丹张鹤熊绍珍耿卫东耿新华赵颖 Institute of Photo-electronics thin film Devices and Technique of Nankai University Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin Key laboratory of Opto-electronic Information Science and Technology(Nankai University and Tianjin University) Ministry of Education

A combined Ag nanoparticle with an insulating or conductive layer structure has been designed tor molecular detection using surface enhanced Raman scattering microscopy. Optical absorption studies revealed localized surface plasmon resonance, which shows regular red shift with increasing environmental dielectric constant. With the combined structure of surface enhanced Raman scattering substrates and rhodamine 6C as a test molecule, the results in this paper show that the absorption has a linear relationship with the local electromagnetic field for insulating substrates, and the electrical property of the substrate has a non-negligible effect on the intensity of the local electromagnetic field and hence the Raman enhancement.

关键词： silver nanoparticles resonance absorption surface enhanced Raman scattering local environment

Polycrystalline GaSb thin films grown by co-evaporation

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Journal of Semiconductors 2009年第3期30卷 26-29页

作者：乔在祥孙云何炜瑜何青李长健 Key laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education Key Laboratory of Photo-Electronics Thin Film Devices and Techniques of TianjinInstitute of Photoelectronic Thin Film Device and TechnologyNankai University

We report optical and electrical properties of polycrystalline GaSb thin films which were successfully grown by co-evaporation on soda-lime glass substrates. The thin films have preferential orientation of the （111） direction. SEM results indicate that the average grain size of GaSb thin film is 500 nm with the substrate temperature of 560 ℃. The average reflectance of GaSb thin film is about 30% and the absorption coefficient is of the order of 10^4 cm^-1. The optical bandgap of GaSb thin film is 0.726 eV. The hole concentration shows a clear increasing trend as the Ga-evaporation-temperature/Sb-evaporation-temperature （TGa/Tsb） ratio increases. When the Ga crucible temperature is 810 ℃ and the antinomy crucible temperature is 415 ℃, the hole concentration of polycrystalline GaSb is 2 × 10^17 cm^-3 and the hole mobility is 130 cm^2/（V·s）. These results suggest that polycrystalline GaSb thin film is a good candidate for the use as a cheap material in TPV cells.

关键词： substrate temperature band gap co-evaporation polycrystalline GaSb films

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

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Chinese Physics B 2011年第8期20卷 403-407页

作者： Ni Jian Zhang Jian-Jun Cao Yu Wang Xian-Bao Li Chao Chen Xin-Liang Geng Xin-Hua Zhao Ying Institute of Photo-electronics thin film Devices and Technique of Nankai University Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin Key Laboratory of Photo-electronicInformation Science and Technology of Ministry of Education (Nankai University) Tianjin 300071 China

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

关键词： amorphous silicon solar cell low temperature open-circuit voltage

Performance improvement of n-i-p μc-Si:H solar cells by gradient hydrogen dilution technique

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Science China(Technological Sciences) 2009年第6期52卷 1756-1761页

作者： YUAN YuJie HOU GuoFu ZHANG JianJun XUE JunMing CAO LiRan ZHAO Ying GENG XinHua Key laboratory of Optoelectronic Information Science and Technology of Ministry of Education Key Laboratory of Photo-Electronics Thin Film Devices and Technique of TianjinInstitute of Photo-Electronics Thin Film Devices and TechniqueNankai UniversityTianjin 300071China

High pressure radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)process was adopted to investigate the effect of constant hydrogen dilution technique and gradient hydrogen dilu-tion technique on the structural evolution of intrinsic films and the performance of n-i-p microcrystal-line silicon solar *** experiment results demonstrated that the grain size and crystalline volume fraction along the growth direction of intrinsic films can be controlled and the performance of solar cells can be greatly improved by gradient hydrogen dilution *** initial active-area efficiency of 5.7%(Voc=0.47V,Jsc=20.2mA/cm2,FF=60%)for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.12%(Voc=1.2V,Jsc=12.05mA/cm2,FF=70%)for the a-Si:H/μc-Si:H tandem n-i-p solar cells has been achieved.

关键词： gradient hydrogen dilution technique microcrystalline silicon n-i-p solar cells