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Evolution of copper species during heat treatment and its effect on CO oxidation reaction on CuCeZrO_(y) catalyst synthesized by a facile solvent-free route

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Journal of Rare Earths 2024年第4期42卷 660-667页

作者： Guangying Fu Dongsen Mao Jun Yu Qiangsheng Guo School of Chemical and Environmental Engineering Shanghai Institute of TechnologyShanghai21418 China The ZeoMat group Qingdao Institute of Bioenergy and Bioprocess TechnologyCASQingdao26611China

Several ternary oxides CuCeZrO_(y)(CCZ)were synthesized by a facile grinding method followed by calcination at high temperatures,and used as catalysts for CO oxidation at low *** influences of calcination temperature(400-600℃)on the physicochemical properties of the assynthesized ternary oxides were investigated by thermogravimetric analysis/differential scanning calorimetry(TGA/DSC),X-ray diffraction(XRD),transmission electron microscopy(TEM),Raman,inductively coupled plasma-optical emission spectrometry(ICP-OES),N_(2) adsorption,H_(2)-temperature programmed reduction(H_(2)-TPR),and X-ray photoelectron spectroscopy(XPS)*** results show that the increase in calcination temperature from 400 to 500℃is conducive to the high dispersion of CuOx on catalyst surface and the incorporation of Cu species into the support to form the Cu-Ce-Zr-O solid *** raising of calcination temperature from 500 to 600℃,however,leads to the segregation of Cu species from the solid solution to aggregate on support surface and growth of highly dispersed CuOx *** highest catalytic activity is acquired over the CCZ calcined at 500℃,which can be ascribed to the largest contents of Cu+species and oxygen vacancies owing to the formation of the maximum amount of Cu-Ce-Zr-O solid solution.

关键词： CuCeZrO_(y)catalyst co oxidation Calcination temperature Grinding method Oxalate precursor Rare earths

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Tunable hexagonal boron nitride topological optical delay line in the visible region

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Chinese Optics Letters 2024年第5期22卷 124-130页

作者：费宏明武敏林瀚杨毅彪肖连团 College of Physics Taiyuan University of TechnologyTaiyuan 030024China College of Information Engineering Shanxi Vocational University of Engineering Science and TechnologyJinzhong 030619China College of Science RMIT UniversityMelbourneVictoria 3000Australia College of Electronic Information and optical Engineering Taiyuan University of TechnologyTaiyuan 030024China

Tunability,ultracompact design,high group index,low loss,and broad bandwidth are desired properties for integrated optical delay lines(ODLs).However,those properties are challenging to achieve simultaneously in the visible *** paper proposes a tunable hexagonal boron nitride topological optical delay line(ODL)in the visible region based on valley photonic *** topological edge state from the beard-type boundary allows the achievement of an ultralow group velocity close to zero,which results in a large group index of 629 at 645 ***,we demonstrate tuning of the slow-light wavelength and optical delay times with electrically tunable liquid crystals by applying external *** device has an ultracompact size of 5μm×2.7μm with an optical delay distance of 25a(a is the lattice constant)and a delay time of 12 *** design can provide a new possibility for designing ODLs working in the visible region for optical communication and quantum computing systems.

关键词： valley photonic crystal topological edge states optical delay lines

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Metallic Sb-stabilized porous silicon with stable SEI and high electron/ion conductivity boosting lithium-ion storage performance

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Rare Metals 2024年第9期43卷 4234-4242页

作者： Jia-Guo Deng Hao-Qin Feng Yu-Long Xu Si-Guang Guo Jian-Ping Li Kai-Fu Huo Ji-Jiang Fu Biao Gao Pual-K.Chu The State Key Laboratory of Refractories and Metallurgy and Institute of Advanced Materials and Nanotechnology Wuhan University of Science and Technology Wuhan National Laboratory for Optoelectronics (WNLO) School of Optical and Electronic InformationHuazhong University of Science and Technology Department of Physics Department of Materials Science & Engineeringand Department of Biomedical EngineeringCity University of Hong Kong

Silicon （Si） has mild discharge potential and high theoretical capacity,making it a highly desirable material for lithium-ion batteries （LIBs）.Nevertheless,the excessive volume expansion,poor ion/electron conductiv ity and unstable solid electrolyte interface （SEI） hinde practical application to ***,the metallic antimony（Sb） stabilized porous Si （SiDSb） composite was prepared by magnesiothermic reduction of Sb2O3and Mg2Si and chemical etching to remove the by-product of *** highly conductive Sb nanodots embedded in the Si liga ments promote not only the formation of conductive and stable LiF-rich SEI,but also the electron/ion transpor ability of *** to the outstanding bulk/interface stability,excellent conductivity,as well as ideal porous structure,the SiDSb electrode demonstrates a capacity of820 mAh·g-1after undergoing 320 turns at 1000 mA·***,it exhibits a stable capacity of 675 m Ah·g-1when tested at a higher current density of 5000 m A·*** results reveal a viable solution to solve three problems at the same time,namely the poor conductivity,inferior SEI and excessive volume expansion of Si,boding well for the design of Si-based materials for high-energy LIBs.

关键词： Anodes Antimony Lithium-ion batteries Silicon Solid electrolyte interphase

Analysis of Phenotypes Associated with Deficiency of PAX6 Haplotypes in Chinese Aniridia Families

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当代医学科学（英文） 2024年第4期44卷 820-826页

作者： Xiao-lu HAO Ran CHEN Wei LIU Bao-ke HOU Ling-hui QU Zhao-hui LI Da-jiang WANG Xin JIN Hou-bin HUANG Senior Department of Opthalmology the Third Medical Center of Chinese PLA General HospitalBeijing 100039China Bolin Eye Care group Beijing 100098China Department of Ophthalmology Hainan Hospital of Chinese PLA General HospitalSanya 572000China Department of Ophthalmology the74th Army Group HospitalGuangzhou 510318China

Objective:To examine the clinical phenotype and genetic deficiencies present in Chinese aniridia families with PAX6 haplotype ***:A comprehensive questionnaire and ophthalmological assessments were administered to both affected patients and unaffected *** clinical feature analysis included the evaluation of visual acuity,intraocular pressure,slit-lamp anterior segment examination,fundus photography,and spectral domain optical coherence *** identify the mutation responsible for aniridia,targeted next-generation sequencing was used as a beneficial ***:A total of 4 mutations were identified,consisting of two novel frameshift mutations(c.314delA,p.K105Sfs*33 and c.838_845dup AACACACC,p.S283Tfs*85),along with two recurring nonsense mutations(c.307C＞T,p.R103X and c.619A＞T,p.K207*).Complete iris absence,macular foveal hypoplasia,and nystagmus were consistent in these PAX6 haplotype-deficient Chinese aniridia families,while corneal lesions,cataracts,and glaucoma exhibited heterogeneity both among the families and within the same ***:In our study,two novel PAX6 mutations associated with aniridia were identified in Chinese families,which expanded the phenotypic and genotypic spectrum of PAX6 *** also analyzed the clinical characteristics of PAX6 haplotype deficiency in Chinese aniridia families.

关键词： PAX6 aniridia genotype haplotype deficiency mutation phenotype

Impact of device resistances in the performance of graphene-based terahertz photodetectors

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Frontiers of Optoelectronics 2024年第2期 89-99页

作者： óscar Castelló Sofía M.López Baptista Kenji Watanabe Takashi Taniguchi Enrique Diez Jesús Enrique Velázquez-Pérez Yahya M.Meziani José M.Caridad Juan A.Delgado-Notario Department of Applied Physics University of Salamanca Unidad de Excelencia en Luz y Materia Estructurada(LUMES) University of Salamanca Research Center for Electronic and optical Materials National Institute for Materials Science Research Center for Materials Nanoarchitectonics National Institute for Materials Science Nanotechnology group USAL–Nanolab University of Salamanca

In recent years, graphene field-effect-transistors(GFETs) have demonstrated an outstanding potential for terahertz(THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune(decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

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Inverse design of broadband and dispersion-flattened highly GeO-doped optical fibers based on neural networks and particle swarm algorithm

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Optoelectronics Letters 2024年

作者： LI Runrui WANG Chuncan Key Laboratory of All optical Network and Advanced Telecommunication Network， Ministry of Education， Institute of Lightwave Technology， Beijing Jiaotong University

Reverse design of highly GeO2-doped silica optical fibers with broadband and flat dispersion profiles is proposed using a neural network combined with a particle swarm optimization algorithm. Firstly， the neural network model designed to predict optical fiber dispersion is trained with an appropriate choice of hyperparameters， achieving a root mean square error （RMSE） of 9.47×10-7on the test dataset， with a determination coefficient （R-squared） of 0.999. Secondly， the neural network is combined with the particle swarm optimization algorithm for the inverse design of dispersion-flattened optical fibers. To expand the search space and avoid particles becoming trapped in local optimal solutions， the particle swarm optimization algorithm incorporates adaptive inertia weight updating and a simulated annealing algorithm. Finally， by using a suitable fitness function， the designed fibers exhibit flat group velocity dispersion （GVD） profiles at 1400-2400 nm， where the GVD fluctuations and minimum absolute GVD values are below 18 and 7 ps/nm·km， respectively.

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In situ tracking of the lithiation and sodiation process of disodium terephthalate as anodes for rechargeable batteries by Raman spectroscopy

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Nano Research 2024年第1期17卷 245-252页

作者： Xiu-Mei Lin Chong Han Xin-Tao Yang Jia-Sheng Lin Wei-Qiang Yang Hong-Xu Guo Yao-Hui Wang Jin-Chao Dong Jian-Feng Li Department of Chemistry and Environment Science Fujian Province University Key Laboratory of Analytical ScienceMinnan Normal UniversityZhangzhou 363000China College of Energy College of Chemistry and Chemical EngineeringCollege of MaterialsState Key Laboratory of Physical Chemistry of Solid SurfacesiChEMXiamen UniversityXiamen 361005China Institute of optical and Electronic Technology China Jiliang UniversityHangzhou 310018China

Organic compounds represent an appealing group of electrode materials for rechargeable batteries due to their merits of biomass,sustainability,environmental friendliness,and *** terephthalate(Na_(2)C_(8)H_(4)O_(4),Na_(2)TP),an organic salt with a theoretical capacity of 255 mAh·g^(-1),is electroactive towards both lithium and ***,its electrochemical energy storage(EES)process has not been directly observed via in situ characterization techniques and the underlying mechanisms are still under ***,in situ Raman spectroscopy was employed to track the de/lithiation and de/sodiation processes of *** appearance and then disappearance of the–COOLi Raman band at 1625 cm^(-1) during the de/lithiation,and the increase and then decrease of the–COONa Raman band at 1615 cm^(-1) during the de/sodiation processes of Na2TP elucidate the one-step with the 2Li+or 2Na+transfer *** also found that the inferior cycling stability of Na2TP as an anode for sodium-ion batteries(SIBs)than lithium-ion batteries(LIBs)could be due to the larger ion radium of Na+than Li+,which results in larger steric resistance and polarization during *** Na2TP,therefore,shows greater changes in spectra during de/sodiation than de/*** expect that our findings could provide a reference for the rational design of organic compounds for EES.

关键词： disodium terephthalate(Na_(2)C_(8)H_(4)O_(4) Na2TP) in situ Raman spectroscopy de/lithiation de/sodiation mechanisms

High-repetition-rate and high-power efficient picosecond thin-disk regenerative amplifier

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High Power Laser Science and Engineering 2024年第2期12卷 16-23页

作者： Sizhi Xu Yubo Gao Xing Liu Yewang Chen Deqin Ouyang Junqing Zhao Minqiu Liu Xu Wu Chunyu Guo Cangtao Zhou Qitao Lue Shuangchen Ruan Key Laboratory of Advanced optical Precision Manufacturing Technology of Guangdong Higher Education Institutes Sino-German College of Intelligent ManufacturingShenzhen Technology UniversityShenzhenChina Han’s Laser Technology Industry group Co. Ltd.ShenzhenChina Shenzhen Key Laboratory of Laser Engineering College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhenChina Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology College of Engineering PhysicsShenzhen Technology UniversityShenzhenChina

We present an effective approach to realize a highly efficient,high-power and chirped pulse amplification-free ultrafast ytterbium-doped yttrium aluminum garnet thin-disk regenerative amplifier pumped by a zero-phonon line 969 nm laser *** amplifier delivers an output power exceeding 154 W at a pulse repetition rate of 1 MHz with custom-designed 48 pump *** exceptional thermal management on the thin disk through high-quality bonding,efficient heat dissipation and a fully locked spectrum collectively contributes to achieving a remarkable optical-to-optical efficiency of 61%and a near-diffraction-limit beam quality with an M2 factor of *** the best of our knowledge,this represents the highest conversion efficiency reported in ultrafast thin-disk regenerative ***,the amplifier operates at room temperature and exhibits exceptional stability,with root mean square stability of less than 0.33%.This study significantly represents advances in the field of laser amplification systems,particularly in terms of efficiency and average *** advantageous combination of high efficiency and diffraction limitation positions the thin-disk regenerative amplifier as a promising solution for a wide range of scientific and industrial applications.

关键词： high efficiency high power picosecond laser regenerative amplifier thin-disk laser

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Recent advances in halide perovskite memristors:From materials to applications

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Frontiers of physics 2024年第2期19卷 73-104页

作者： Sixian Liu Jianmin Zeng Qilai Chen Gang Liu Department of Micro/Nano Electronics School of Electronic Information and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China Aerospace Science&Industry Shenzhen(group)Co.Ltd. Shenzhen 518000China

With the emergence of the Internet of Things(IoT)and the rapid growth of big data generated by edge devices,there has been a growing need for electronic devices that are capable of processing and transmitting data at low power and high *** Complementary Metal-Oxide-Semiconductor(CMOS)devices are nonvolatile and often limited by their ability for certain IoT applications due to their unnecessary power consumption for data movement in von Neuman architecture-based *** has led to a surge in research and development efforts aimed at creating innovative electronic components and systems that can overcome these shortcomings and meet the evolving needs of the information era,which share features such as improved energy efficiency,higher processing speeds,and increased *** are a novel type of electronic device that has the potential to break down the barrier between storage and *** storing data and processing information within the same device,memristors can minimize the need for data movement,which allows for faster processing speeds and reduced energy *** further improve the energy efficiency and reliability of memristors,there has been a growing trend toward diversifying the selection of dielectric materials used in *** perovskites(HPs)have unique electrical and optical properties,including ion migration,charge trapping effect caused by intrinsic defects,excellent optical absorption efficiency,and high charge mobility,which makes them highly promising in applications of *** this paper,we provide a comprehensive overview of the recent development in resistive switching behaviors of HPs and the underlying ***,we summarize the diverse range of HPs,their respective performance metrics,as well as their applications in various ***,we critically evaluate the current bottlenecks and possible opportunities in the future research of HP memristors.

关键词： halide perovskite memristor mechanism neuromorphic computing non-volatile memory