Metallic Sb-stabilized porous silicon with stable SEI and high electron/ion conductivity boosting lithium-ion storage performance
作者机构:The State Key Laboratory of Refractories and Metallurgy and Institute of Advanced Materials and NanotechnologyWuhan University of Science and TechnologyWuhan 430081China Wuhan National Laboratory for Optoelectronics(WNLO)School of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan 430074China Department of PhysicsDepartment of Materials Science&Engineeringand Department of Biomedical EngineeringCity University of Hong KongHong Kong 999077China
出 版 物:《Rare Metals》 (稀有金属(英文版))
年 卷 期:2024年第43卷第9期
页 面:4234-4242页
核心收录:
学科分类:0808[工学-电气工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:financially supported by the National Natural Science Foundation of China(Nos.51974208,U2003130,52002297 and U2004120) the Basic Research Program of Shenzhen Municipal Science and Technology Innovation Committee(No.JCYJ20210324141613032) the Outstanding Youth Foundation of Natural Science Foundation of Natural Science Foundation of Hubei Province(No.2020CFA099) the Innovation Group of Key Research and Development Program of Hubei Province(Nos.2021BAA208 and 2022BCA061) the Knowledge Innovation Project of Wuhan City(No.2022010801010303),National Key R&D Program of China(No.2022YFB2404800) the Key R&D Projects of Hubei Province(Nos.2022BCA061,2021BAA176) City University of Hong Kong Strategic Research Grant(SRG),Hong Kong,China(No.7005505) City University of Hong Kong Donation Research Grant(DON-RMG No.9229021)
主 题:Silicon Anodes Lithium-ion batteries Antimony Solid electrolyte interphase
摘 要:Silicon(Si)has mild discharge potential and high theoretical capacity,making it a highly desirable material for lithium-ion batteries(LIBs).Nevertheless,the excessive volume expansion,poor ion/electron conductiv ity and unstable solid electrolyte interface(SEI)hinde practical application to ***,the metallic antimony(Sb)stabilized porous Si(SiDSb)composite was prepared by magnesiothermic reduction of Sb_(2)O_(3)and Mg_(2)Si and chemical etching to remove the by-product of *** highly conductive Sb nanodots embedded in the Si liga ments promote not only the formation of conductive and stable LiF-rich SEI,but also the electron/ion transpor ability of *** to the outstanding bulk/interface stability,excellent conductivity,as well as ideal porous structure,the SiDSb electrode demonstrates a capacity of820 mAh·g^(-1)after undergoing 320 turns at 1000 mA·g^(-1).Additionally,it exhibits a stable capacity of 675 m Ah·g^(-1)when tested at a higher current density of 5000 m A·g^(-1).The results reveal a viable solution to solve three problems at the same time,namely the poor conductivity,inferior SEI and excessive volume expansion of Si,boding well for the design of Si-based materials for high-energy LIBs.