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Identifying the dynamic behaviors in complete reconstruction of Co-based complex precatalysts during electrocatalytic oxygen evolution

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Journal of Energy Chemistry 2025年第1期100卷 226-233页

作者： Jingfang Zhang Danyang Wu Linke Cai Youluan Lu Fanpeng Cheng Lijuan Shi Qun Yi Yao Liu Yi Huang Key laboratory of Green Chemical Engineering Process of Ministry of Education Engineering Research Center of Phosphorus Resources Development and Utilization of Ministry of Education Hubei Key Laboratory of Novel Reactor and Green Chemical Technology School of Chemical Engineering & Pharmacy Wuhan Institute of Technology Key laboratory of Pesticide & Chemical Biology of Ministry of Education Engineering Research Center of Photoenergy Utilization for Pollution Control and Carbon Reduction of Ministry of Education College of Chemistry Central China Normal University College of Materials Science and Engineering Fuzhou University

Transition metal-based nanomaterials have emerged as promising electrocatalysts for oxygen evolution reaction（OER）. Considerable research efforts have shown that self-reconstruction occurs on these nanomaterials under operating conditions of OER process. However, most of them undergo incomplete reconstruction with limited thickness of reconstruction layer, leading to low component utilization and arduous exploration of real catalytic mechanism. Herein, we identify the dynamic behaviors in complete reconstruction of Co-based complexes during OER. The hollow phytic acid（PA） cross-linked CoFe-based complex nanoboxes with porous nanowalls are designed because of their good electrolyte penetration and mass transport ability, in favor of the fast and complete reconstruction. A series of experiment characterizations demonstrate that the reconstruction process includes the fast substitution of PA by OH-to form Co（Fe）(OH)xand subsequent potential-driven oxidation to Co（Fe）OOH. The obtained CoFeOOH delivers a low overpotential of 290 mV at a current density of 10 mA cm-2and a long-term *** experiment results together with theory calculations reveal that the Fe incorporation can result in the electron rearrangement of reconstructed CoFeOOH and optimization of their electronic structure,accounting for the enhanced OER activity. The work provides new insights into complete reconstruction of metal-based complexes during OER and offers guidelines for rational design of high-performance electrocatalysts.

关键词： Complete reconstruction Co-based complex Precatalysts Oxygen evolution reaction

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EQR SiPM with P-on-N diode configuration

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Nuclear Science and Techniques 2019年第8期30卷 19-25页

作者： Jian-Quan Jia Jia-Li Jiang Kun Liang Ru Yang De-Jun Han novel device laboratory Beijing Normal University

The silicon photomultiplier(SiPM) with epitaxial quenching resistor(EQR) is an emerging and developing technology that has recently attracted the interest from the research community. It has characteristics of a continuous low-resistance cap layer and integrated quenching resisters in epitaxial silicon layer, which makes it possible to increase microcell density or reduce microcell size, thus obtaining large dynamic range and high photon detection efficiency(PDE) simultaneously. Results published show that the EQR SiPM with N-on-P diode configuration had relatively low PDE at peak wavelength of 480 nm as 16%. This paper reported the EQR SiPM with P-on-N diode configuration having active area of 3 × 3 mm^2 and cell density of 10,000/mm^2(total 90,000 pixels). It was characterized with gain of 2E5, dark count rate of 7 MHz, crosstalk of 7%, dynamic range of 85,000 pixels, overall recovery time of 32 ns at room temperature and over-voltage of 3.5 V. The improved PDE at peak wavelength of 420 nm was 30%.

关键词： Silicon photomultiplier Epitaxial quenching P-on-N diode Characteristics

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Active layer self-protection process for organic field-effect transistors

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Journal of Semiconductors 2009年第9期30卷 45-48页

作者：刘舸刘明商立伟涂德钰刘兴华王宏柳江 laboratory of Nanofabrication and novel device Integration Institute of MicroelectronicsChinese Academy of Sciences

To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.

关键词： OFET pentacene CuPc stability

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Material properties and effective work function of reactive sputtered TaN gate electrodes

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Journal of Semiconductors 2011年第5期32卷 32-35页

作者：张满红霍宗亮王琴刘明 laboratory of Nanofabrication and novel device Integration Institute of MicroelectronicsChinese Academy of Sciences

The resistivity, crystalline structure and effective work function （EWF） of reactive sputtered TaN has been investigated. As-deposited TaN films have an fcc structure. After post-metal annealing （PMA） at 900℃, the TaN films deposited with a N2 flow rate greater than 6.5 sccm keep their fcc structure, while the films deposited with a N2 flow rate lower than 6.25 sccm exhibit a microstructure change. The flatband voltages of gate stacks with TaN films as gate electrodes on SiO2 and HfO2 are also measured. It is concluded that a dipole is formed at the dielectric-TaN interface and its contribution to the EWF of TaN changes with the Ta/N ratio in TaN, the underneath dielectric layer and the PMA conditions.

关键词： metal gate thermal stability effective work function dipole

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Study of top and bottom contact resistance in one organic field-effect transistor

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Chinese Physics B 2009年第8期18卷 3530-3534页

作者：刘舸刘明王宏商立伟姬濯宇刘兴华柳江 laboratory of Nanofabrication and novel device Integration Institute of MicroelectronicsChinese Academy of Sciences

This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.

关键词： organic field-effect transistor top contact geometry bottom contact geometry hybrid contact geometry

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Phase zone photon sieve

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Chinese Physics B 2009年第1期18卷 183-188页

作者：贾佳谢常青 Key laboratory of Nano-Fabrication and novel device Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

A novel diffractive optical element, named phase zone photon sieve （PZPS）, is presented. There are three kinds of phase plates in PZPSs： PZPS1, PZPS2, and PZPS3. Each of the PZPSs has its own structure and is made on quartz substrate by etching. The three PZPSs have stronger diffraction peak intensity than a photon sieve （PS） when the margin pinhole and zone line width are kept the same. The PZPS3 can produce a smaller central diffractive spot than the ordinary PS with the same number of zones on the Fresnel zone plate. We have given the design method for and the simulation of PZPS and PS. PZPS has potential applications in optical maskless lithography.

关键词： photon sieve Fresnel zone plate diffractive optics

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An overview of the switching parameter variation of RRAM

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Chinese Science Bulletin 2014年第36期59卷 5324-5337页

作者： Meiyun Zhang Shibing Long Guoming Wang Yang Li Xiaoxin Xu Hongtao Liu Ruoyu Liu Ming Wang Congfei Li Pengxiao Sun Haitao Sun Qi Liu Hangbing L Ming Liu laboratory of Nanofabrication and novel device Integration Institute of Microelectronics Chinese Academy of Sciences

Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed.

关键词：切换参数变化非易失性存储器随机存取存储器统计分析模型操作速度统计方法渗流模型

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Gate oxide punching thru mechanism in plasma dry etching

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Science China(Technological Sciences) 2008年第11期51卷 1990-1994页

作者： ZHANG QingZhao XIE ChangQing LIU Ming LI Bing CHEN BaoQin ZHU XiaoLi laboratory of Nanofabrication and novel device Integration Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that what caused the punching thru was not only the selectivity of poly-silicon/oxide but also the pattern topography. We used the basic SRAM pattern to check this topography effect, and found that gate oxide located at the narrow spacing of two parallel serpentine lines was the most easily punched thru. What caused the topography effect was the starvation of oxygen in these places which were induced by the residue of poly-silicon and enhanced by electron shading effect. So, to solve the issue of gate oxide punching thru, firstly the selectivity should be enough, secondly we should pay attention to the etching pattern topography.

关键词： plasma etch punch thru gate oxide

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A first-principle investigation of the oxygen defects in Si_3N_4-based charge trapping memories

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Journal of Semiconductors 2014年第1期35卷 40-45页

作者：罗京卢金龙赵宏鹏代月花刘琦杨金蒋先伟许会芳 School of Electronics and Information Engineering Anhui University laboratory of Nano-Fabrication and novel device Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

Based on first principle calculations, a comprehensive study of substitutional oxygen defects in hexagonal silicon nitride （β-Si3N4） has been carried out. Firstly, it is found that substitutional oxygen is most likely to form clusters at three sites in Si3N4 due to the intense attractive interaction between oxygen defects. Then, by using three analytical tools （trap energy, modified Bader analysis and charge density difference）, we discuss the trap abilities of the three clusters. The result shows that each kind of cluster at the three specific sites presents very different abilities to trap charge carriers （electrons or holes）： two of the three clusters can trap both kinds of charge carriers, confirming their amphoteric property; While the last remaining one is only able to trap hole carriers. Moreover, our studies reveal that the three clusters differ from each other in terms of endurance during the program/erase progress. Taking full account of capturing properties for the three oxygen clusters, including trap ability and endurance, we deem holes rather than electrons to be optimal to act as operational charge carriers for the oxygen defects in Si3N4-based charge trapping memories.

关键词： charge trapping memory silicon nitride substitutional oxygen capturing property first-principle

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Metal dopants in HfO_2-based RRAM: first principle study

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Journal of Semiconductors 2014年第4期35卷 25-31页

作者：赵远洋汪家余徐建彬杨菲刘琦代月花 Institute of Electronic and Information Project Anhui University laboratory of Nano-Fabrication and novel device Integrated Technology Institute of Microelectronics Chinese Academyof Sciences

Based on density-functional theory （DFT）, the effects of metal dopants in HfO2-based RRAM are studied by the Vienna ab initio simulation package （VASP）, Metal dopants are classified into two types （interstitial and substitutional） according to the formation energy when they exist in HfO2 cell. Several conductive channels are observed through the isosurface plots of the partial charge density for HfO2 doped with interstitial metals, while this phenomenon cannot be found in HfO2 doped with substitutional metals. The electron density of states （DOS） and the projected electron density of states （PDOS） are calculated and analyzed; it is found that the conduction filament in HfO2 is directly formed by the interstitial metals and further, that the substitutional metals cannot directly generate conduction filament. However, all the metal dopants contribute to the formation of the oxygen vacancy （Vo） filament. The formation energy of the Vo and the interaction between metal dopants and Vo are calculated; it is revealed that the P-type substitutional metal dopants have a strong enhanced effect on the Vo filament, the interstitial metal dopants have a minor assistant effect, while Hf-like and N-Woe substitutional metal dopants have the weakest assistant effect.

关键词： RRAM metal dopant conduction filament interstitial substitutional

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