Active layer self-protection process for organic field-effect transistors

作     者：刘舸 刘明 商立伟 涂德钰 刘兴华 王宏 柳江 

作者机构：Laboratory of Nanofabrication and Novel Device IntegrationInstitute of MicroelectronicsChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第9期

页      面：45-48页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the State Key Development Program for Basic Research of China(No.2006CB806204) the National Natural Science Foundation of China(Nos.60676001,60676008) 

主　　题：OFET pentacene CuPc stability 

摘      要：To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.