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高功率密度外延的单晶金刚石制备高性能辐射探测器

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Science China Materials 2024年第7期67卷 2329-2334页

作者：丁森川张金风苏凯任泽阳陈军飞杨智清张进成郝跃 State Key laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Xidian-Wuhu research Institute Wuhu 241002China

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积(MPCVD)方法在高温高压(HTHP)金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了等离... 详细信息

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积(MPCVD)方法在高温高压(HTHP)金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了等离子体中的碳氢(C/H)比,并显著降低了金刚石外延层中的杂质和位错含量.(004)面X射线衍射摇摆曲线的半高宽(FWHM)仅为15弧秒,在室温下的光致发光光谱中没有检测到杂质发光带.使用制备的200μm厚的外延金刚石膜制成的辐射探测器可对α-粒子响应,其电子的电荷收集效率为97.03%,能量分辨率为2.1%,空穴的电荷收集效率和能量分辨率为97.86%和1.5%.此外,电子和空穴的迁移率和寿命的乘积分别达到8×10^(−5)和4.1×10^(−4) cm^(2) V^(−1).此方法有望满足商用金刚石辐射探测器对性能和成本控制的严苛要求.

关键词： single-crystal diamond radiation detectors high-power-density epitaxy charge collection efficiency

Synthesis,structure,and thermal expansion in CaZrF6 with two polymorphs

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Nano research 2024年第9期17卷 8618-8626页

作者： Peixian Zhang Yongqiang Qiao Kaiyue Zhao Qingjie Wang Huan Zhao Juan Guo Erjun Liang Tao Sun Jiangwei Zhang Qilong Gao Key laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China College of Energy Materials and Chemistry Inner Mongolia UniversityHohhot 010021China First Affiliated Hospital of Dalian Medical University 222 Zhongshan RoadDalian 116011China Ordos laboratory Ordos 017000China

Due to the high structural flexibility and controllable thermal expansion,cubic double ReO_(3)-type negative thermal expansion(NTE)fluorides provide a solution for solving the prominent phenomenon of thermal expansion mismatch between ***,the expensive raw materials and complex synthesis steps limit its practical *** this work,we have designed a more advantageous method for the synthesis of NTE material CaZrF6,and it is expected to be generalized to the synthesis of other double ReO_(3)-***,a new orthorhombic phase CaZrF6 has been synthesized via this method in a lower *** the strong isotropic NTE of the cubic phase CaZrF6,the orthorhombic phase shows the strong anisotropic positive thermal expansion(PTE).The combined analysis of temperature-dependent X-ray diffraction(XRD),Raman spectra,and first-principles calculations shows that the low frequency phonon vibration mode with negative Grüneisen parameter in cubic CaZrF6 are strongly correlated with the transverse thermal vibration of F atoms and dominates the NTE of the material.

关键词： negative thermal expansion fluorides polymorph lattice dynamics first principles calculations

Low Stress TSV Arrays for High-Density Interconnection

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Engineering 2024年第7期38卷 201-208页

作者： Binbin Jiao Jingping Qiao Shiqi Jia Ruiwen Liu Xueyong Wei Shichang Yun Yanmei Kong Yuxin Ye Xiangbin Du Lihang Yu Bo Cong Institute of microelectronics Chinese Academy of SciencesBeijing 100000China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100000China State Key laboratory for Manufacturing Systems Engineering Xi’an Jiaotong UniversityXi’an 710049China

In three-dimensional(3D)stacking,the thermal stress of through-silicon via(TSV)has a significant influence on chip performance and reliability,and this problem is exacerbated in high-density TSV *** this study,a novel hollow tungsten TSV(W-TSV)is presented and *** hollow structure provides space for the release of thermal *** results showed that the hollow W-TSV structure can release 60.3%of thermal stress within the top 2 lm from the surface,and thermal stress can be decreased to less than 20 MPa in the radial area of 3 *** ultra-high-density(1600 TSV∙mm2)TSV array with a size of 640×512,a pitch of 25 lm,and an aspect ratio of 20.3 was fabricated,and the test results demonstrated that the proposed TSV has excellent electrical and reliability *** average resistance of the TSV was 1.21 *** leakage current was 643 pA and the breakdown voltage was greater than 100 *** resistance change is less than 2%after 100 temperature cycles from40 to 125℃.Raman spectroscopy showed that the maximum stress on the wafer surface caused by the hollow W-TSV was 31.02 MPa,which means that there was no keep-out zone(KOZ)caused by the TSV *** results indicate that this structure has great potential for applications in large-array photodetectors and 3D integrated circuits.

关键词： Thermal stress Through-silicon via(TSV)High-density integration

Soft multifunctional neurological electronic skin through intrinsically stretchable synaptic transistor

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Nano research 2024年第7期17卷 6550-6559页

作者： Pengcheng Zhu Shuairong Mu Wenhao Huang Zeye Sun Yuyang Lin Ke Chen Zhifeng Pan Mohsen Golbon Haghighi Roya Sedghi Junlei Wang Yanchao Mao Key laboratory of Materials Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450001China School of Mechanical and Power Engineering Zhengzhou UniversityZhengzhou 450001China Department of Chemistry Shahid Beheshti UniversityTehran ***Iran

Neurological electronic skin(E-skin)can process and transmit information in a distributed manner that achieves effective stimuli perception,holding great promise in neuroprosthetics and soft *** E-skin with multifunctional perception abilities can enable robots to precisely interact with the complex surrounding ***,current neurological E-skins that possess tactile,thermal,and visual perception abilities are usually prepared with rigid materials,bringing difficulties in realizing biologically synapse-like ***,we report a soft multifunctional neurological E-skin(SMNE)comprised of a poly(3-hexylthiophene)(P3HT)nanofiber polymer semiconductor-based stretchable synaptic transistor and multiple soft artificial sensory receptors,which is capable of effectively perceiving force,thermal,and light *** stretchable synaptic transistor can convert electrical signals into transient channel currents analogous to the biological excitatory postsynaptic *** it also possesses both short-term and long-term synaptic plasticity that mimics the human memory *** integrating a stretchable triboelectric nanogenerator,a soft thermoelectric device,and an elastic photodetector as artificial receptors,we further developed an SMNE that enables the robot to make precise actions in response to various surrounding *** with traditional neurological E-skin,our SMNE can maintain the softness and adaptability of biological synapses while perceiving multiple stimuli including force,temperature,and *** SMNE could promote the advancement of E-skins for intelligent robot applications.

关键词： electronic skin soft stretchable polymer semiconductor synaptic transistor multifunctional

Upconversion luminescence and temperature sensing performance of Er^(3+) ions doped self-activated KYb(MoO_(4))_(2) phosphors

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Journal of Rare Earths 2024年第8期42卷 1507-1513,I0004页

作者： Ye Tong Wenpeng Liu Shoujun Ding School of microelectronics and Data Science Anhui University of TechnologyMaanshan243002China Advanced Laser Technology laboratory of Anhui Province Hefei230037China Anhui Institute of Optics and Fine Mechanics Chinese Academy of SciencesHefei230031China

In this work,a series of self-activated KYb(MoO_(4))_(2) phosphors with various x at% Er^(3+) doping concentrations(x=0.5,1,3,5,8,10,15) was synthesized by the solid-state reaction *** phase structure of the as-prepared samples was analyzed by X-ray diffraction(XRD),XRD Rietveld refinement and Fourier transform infrared(FT-IR) *** as-prepared samples retain the orthorhombic structure with space group of Pbcn even Er^(3+) doping concentration up to 15 at%.High-purity upconversion(UC) green emission with green to red intensity ratio of 55 is observed from the as-prepared samples upon the excitation of 980 nm semiconductor laser and the optimum doping concentration of Er^(3+) ions in the self-activated KYb(MoO_(4))_(2) host is revealed as 3 at%.The strong green UC emission is confirmed as a two-photon process based on the power-dependent UC *** addition,the fluorescence intensity ratios(FIRs) of the two thermally-coupled energy levels,namely ^(2)H_(11/2) and ^(4)S_(3/2).of Er^(3+) ions were investigated in the temperature region 300-570 K to evaluate the optical temperature sensor behavior of the *** maximum relative sensitivity(S_(R)) is determined to be 0.0069 K^(-1) at300 K and the absolute sensitivity(S_(A)) is determined to be 0.0126 K^(-1) at 300 *** S_(A) of self-activated KYb(MoO_(4))2:Er^(3+)is almost twice that of traditional KY(MoO_(4))2:Er^(3+)/Yb^(3+)codoping *** results demonstrate that Er^(3+) ions doped self-activated KYb(MoO_(4))2 phosphor has promising application in visible display,trademark security and optical temperature sensors.

关键词： Er^(3+)ions doped KYb(MoO_(4))_(2) Self-activated phosphors Upconversion luminescence Solid-state reaction method Optical temperature sensors Rare earths

Novel 2D bifunctional layered rare-earth hydroxides@GO catalyst as a functional interlayer for improved liquid-solid conversion of polysulfides in lithium-sulfur batteries

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Chinese Chemical Letters 2024年第5期35卷 434-440页

作者： Haodong Wang Xiaoxu Lai Chi Chen Pei Shi Houzhao Wan Hao Wang Xingguang Chen Dan Sun CAS Key laboratory of Design and Assembly of Functional Nanostructures and Fujian Provincial Key laboratory of Nanomaterials Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China College of Chemistry and Materials Fujian Normal UniversityFuzhou 350007China Xiamen Institute of Rare Earth Materials Haixi InstitutesChinese Academy of SciencesXiamen 361021China School of microelectronics Hubei UniversityWuhan 430062China Xiamen Key laboratory of Rare Earth Photoelectric Functional Materials Xiamen 361021China

The detrimental“shuttle effect”of lithium polysulfides(LiPSs)together with sluggish multi-order reaction kinetics are the main drawbacks hindering lithium-sulfur(Li-S)batteries from commercial ***,we first propose the implementability of layered rare-earth hydroxides(LREHs)in Li-S batteries to optimize electrochemical *** this work,a two-dimensional(2D)rare-earth-based composite constructed by the layered gadolinium hydroxy chloride[Gd_(2)(OH)_(5)(H_(2)O)_(n)]Cl nanoplates(LGdH NPs)and graphene oxide(GO)was designed as a sulfur immobilizer for Li-S *** the experimental results and density functional theory(DFT)calculations,it is revealed that the LGdH@GO composite not only provides a strong anchoring of the intermediates during cycling,but also acts as an effective catalyst to accelerate the liquid-solid conversion of *** Li-S batteries assembled by LGdH@GO modified separators delivered a superior rate performance with a specific capacity of 605.34 mAh/g at 5 C,as well as excellent cycle stability with a decay rate of 0.087%over 500 cycles at 2 *** study provided a deep understanding of the mechanism to suppress the“shuttle effect”by the LREHs,and a guide to design effective functional interlayers for high-performance Li-S batteries with excellent electrocatalytic activity.

关键词： Lithium-sulfur batteries Functional separator Layered rare-earth hydroxides Shuttle effect Adsorption Catalysis

A high precision two-axis GMR angular sensor manufactured by post-annealing

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Science China(Information Sciences) 2024年第6期67卷 465-466页

作者： Zitong ZHOU Zhiqiang CAO Shaohua YAN Xiaolong WANG Libo XIE Shiyang LU Dapeng ZHU Qunwen LENG Weisheng ZHAO School of Integrated Circuit Science and Engineering Beihang University Beihang Qingdao microelectronics research Institute Beihang University National Key Lab of Spintronics Institute of International InnovationBeihang University

Angle sensors are widely used in numerous fields such as industry,military,medical care,and the Internet of Things(IoT)[1].Magnetoresistance angle sensors have become a mainstream approach for angle measurement becaus... 详细信息

关键词： Annealing

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

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Science China(Information Sciences) 2024年第9期67卷 346-347页

作者： Yong ZHANG Dongxin TAN Cizhe FANG Zheng-Dong LUO Qiyu YANG Qiao ZHANG Yu ZHANG Xuetao GAN Yan LIU Yue HAO Genquan HAN State Key Discipline laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University Hangzhou Institute of Technology Xidian University Key laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical University

Machine vision has become crucial in the modern intelligence era, especially in rapidly developing applications such as autonomous vehicles and robotic visual sensors [1].With the ever-increasing requirements of visua... 详细信息

关键词： Ferroelectric RAM

Spin transport characteristics modulated by the GeBi interlayer in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures

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Chinese Physics B 2024年第2期33卷 471-475页

作者：李明明张磊金立川郭海中 Key laboratory of Materials Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China State Key laboratory of Electronic Thin Films&Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Quantum Materials and Physics Henan Academy of SciencesZhengzhou 450046China

For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor *** main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin ***,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated *** effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were *** spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier ***,the band gap of the GeBi layer was tuned by changing the Bi *** spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi *** results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.

关键词： spin current Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures spin pumping inverse spin Hall effect