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Construction of 3D porous Cu_(1.81)S/nitrogen-doped carbon frameworks for ultrafast and long-cycle life sodium-ion storage

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International Journal of Minerals,Metallurgy and Materials 2025年第1期32卷 191-200页

作者： Chen Chen Hongyu Xue Qilin Hu Mengfan Wang Pan Shang Ziyan Liu Tao Peng Deyang Zhang Yongsong Luo Key Laboratory of microelectronics and Energy of Henan Province Henan Joint International Research Laboratory of New Energy Storage TechnologyCollege of Physics and Electronic EngineeringXinyang Normal UniversityXinyang 464000China School of Physics and Electronic Engineering Nanyang Normal UniversityNanyang 473061China

Transition metal sulfides have great potential as anode mterials for sodium-ion batteries(SIBs)due to their high theoretical specific ***,the inferior intrinsic conductivity and large volume variation during sodiation-desodiation processes seriously affect its high-rate and long-cyde performance,unbeneficial for the application as fast-charging and long-cycling SIBs ***,the three-dimensional porous Cu_(1.81)S/nitrogen-doped carbon frameworks(Cu_(1.81)S/NC)are synthesized by the simple and facile sol-gel and annealing processes,which can accommodate the volumetric expansion of Cu_(1.81)S nanoparticles and accelerate the transmission of ions and electrons during Na^(+)insertion/extraction processes,exhibiting the excellent rate capability(250.6 mA·g^(-1)at 20.0 A·g^(-1))and outstanding cycling stability(70% capacity retention for 6000 cycles at 10.0 A·g^(-1))for ***,the Na-ion full cells coupled with Na_(3)V_(2)(PO_(4))_(3)/C cathode also demonstrate the satisfactory reversible specific capacity of 330.5 mAh·g^(-1)at 5.0 A·g^(-1)and long-cycle performance with the 86.9% capacity retention at 2.0 A·g^(-1)after 750 *** work proposes a promising way for the conversionbased metal sulfides for the applications as fast-charging sodium-ion battery anode.

关键词： copper sulfide nanoparticles porous carbon framework fast charging long-cycle performance sodium-ion full batteries

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Mutual-structure weighted guided image filtering for depth map restoration

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Optoelectronics Letters 2025年第1期21卷 51-56页

作者： LIU Zijian SONG Jian CHEN Quanmin XU Jiangtao Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin University Spikesee Technology Co. Ltd.

Although guided image filtering(GIF) is known for preserving edges and fast computation, it may produce inaccurate outputs in depth map restoration. In this paper, a novel confidence-weighted GIF called mutual-structure weighted GIF(MSWGIF) is proposed, which replaces the mean filtering strategy in GIF during handling overlapping windows. The confidence value is composed of a depth term and a mutual-structure term, where the depth term is utilized to protect the edges of the output, and the mutual-structure term helps to select accurate windows during the structure characteristics of the guidance image are transferred to the output. Experimental results show that MSWGIF reduces the root mean square error(RMSE) by an average of 12.37%, and the average growth rate of correlation(CORR) is 0.07% on average. Additionally, the average growth rate of structure similarity index measure(SSIM) is 0.34%.

关键词： Wiener filtering

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A Rapid Adaptation Approach for Dynamic Air‑Writing Recognition Using Wearable Wristbands with Self‑Supervised Contrastive Learning

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Nano-Micro Letters 2025年第2期17卷 417-431页

作者： Yunjian Guo Kunpeng Li Wei Yue Nam‑Young Kim Yang Li Guozhen Shen Jong‑Chul Lee Department of Electronic Convergence Engineering Kwangwoon UniversitySeoul 01897South Korea Radio Frequency Integrated Circuit(RFIC)Bio centre Kwangwoon UniversitySeoul 01897South Korea Department of Electronic Engineering Kwangwoon UniversitySeoul 01897South Korea School of microelectronics Shandong UniversityJinan 250101People’s Republic of China State Key Laboratory of Integrated Chips and Systems Fudan UniversityShanghai 200433People’s Republic of China School of Integrated Circuits and Electronics Beijing Institute of TechnologyBeijing 100081People’s Republic of China

Wearable wristband systems leverage deep learning to revolutionize hand gesture recognition in daily *** existing approaches that often focus on static gestures and require extensive labeled data,the proposed wearable wristband with selfsupervised contrastive learning excels at dynamic motion tracking and adapts rapidly across multiple *** features a four-channel sensing array composed of an ionic hydrogel with hierarchical microcone structures and ultrathin flexible electrodes,resulting in high-sensitivity capacitance *** wireless transmission from a Wi-Fi module,the proposed algorithm learns latent features from the unlabeled signals of random wrist ***,only few-shot labeled data are sufficient for fine-tuning the model,enabling rapid adaptation to various *** system achieves a high accuracy of 94.9%in different scenarios,including the prediction of eight-direction commands,and air-writing of all numbers and *** proposed method facilitates smooth transitions between multiple tasks without the need for modifying the structure or undergoing extensive task-specific *** utility has been further extended to enhance human–machine interaction over digital platforms,such as game controls,calculators,and three-language login systems,offering users a natural and intuitive way of communication.

关键词： Wearable wristband Self-supervised contrastive learning Dynamic gesture Air-writing Human-machine interaction

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Effects of Annealing Temperature on the Structural,Optical,and Electrical Properties of ZnO Thin Films Grown on n-Si<100>Substrates by the Sol–Gel Spin Coating Method

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Acta Metallurgica Sinica(English Letters) 2014年第4期27卷 682-688页

作者： Aniruddh Bahadur Yadav Amritanshu Pandey S.Jit Department of Electronics Engineering Centre for Research in MicroelectronicsIndian Institute of Technology (Banaras Hindu University)

The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this *** structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic *** XRD analysis shows a polycrystalline nature of the films at all three annealing ***,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the *** surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing *** properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,*** fourpoint probe measurement shows a decrease in resistivity from 2：1 10 2to 8：1 10 4X cm with the increased temperature from 450 to 650 °*** study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.

关键词： Nanocrystalline ZnO thin film Sol–gel Annealing Surface morphology Photoluminescence(PL) Resistivity Grain size

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Alternative Strategy for Development of Dielectric Calcium Copper Titanate‑Based Electrolytes for Low‑Temperature Solid Oxide Fuel Cells

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Nano-Micro Letters 2025年第1期17卷 310-332页

作者： Sajid Rauf Muhammad Bilal Hanif Zuhra Tayyab Matej Veis MAKYousaf Shah Naveed Mushtaq Dmitry Medvedev Yibin Tian Chen Xia Martin Motola Bin Zhu College of Mechatronics and Control Engineering Shenzhen UniversityShenzhen 518060People’s Republic of China Department of Inorganic Chemistry Faculty of Natural SciencesComenius University BratislavaIlkovicova684215 BratislavaSlovakia Energy Storage Joint research Center School of Energy and EnvironmentSoutheast UniversityNanjing 210096People’s Republic of China Hydrogen Energy Laboratory Ural Federal University620002 EkaterinburgRussia Laboratory of Electrochemical Devices Based on Solid Oxide Proton Electrolytes Institute of High Temperature Electrochemistry620066 EkaterinburgRussia School of microelectronics Hubei UniversityWuhan 430062People’s Republic of China

The development of low-temperature solid oxide fuel cells(LT-SOFCs)is of significant importance for realizing the widespread application of *** has stimulated a substantial materials research effort in developing high oxide-ion conductivity in the electrolyte layer of *** this context,for the first time,a dielectric material,CaCu_(3)Ti_(4)O_(12)(CCTO)is designed for LT-SOFCs electrolyte application in this *** individual CCTO and its heterostructure materials with a p-type Ni_(0.8)Co_(0.15)Al_(0.05)LiO_(2−δ)(NCAL)semiconductor are evaluated as alternative electrolytes in LT-SOFC at 450–550℃.The single cell with the individual CCTO electrolyte exhibits a power output of approximately 263 mW cm^(-2) and an open-circuit voltage(OCV)of 0.95 V at 550℃,while the cell with the CCTO–NCAL heterostructure electrolyte capably delivers an improved power output of approximately 605 mW cm^(-2) along with a higher OCV over 1.0 V,which indicates the introduction of high hole-conducting NCAL into the CCTO could enhance the cell performance rather than inducing any potential short-circuiting *** is found that these promising outcomes are due to the interplay of the dielectric material,its structure,and overall properties that led to improve electrochemical mechanism in CCTO–***,density functional theory calculations provide the detailed information about the electronic and structural properties of the CCTO and NCAL and their heterostructure CCTO–*** study thus provides a new approach for developing new advanced electrolytes for LT-SOFCs.

关键词： LT-SOFCs Dielectric CaCu_(3)Ti_(4)O_(12) Semiconductor Ni_(0.8)Co_(0.15)Al_(0.05)LiO_(2−δ) Ionic conductivity Heterostructure electrolyte

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Sensitivity analysis of an HgCdTe based photovoltaic receiver for long-wavelength free space optical communication systems

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Optoelectronics Letters 2009年第1期5卷 21-25页

作者： A.D.D.Dwivedi P.Chakrabarti centre for research in microelectronics Department of Electronics EngineeringInstitute of TechnologyBanaras Hindu University

We examine theoretically the performance of an Hg0.77Cd0.23Te based p-n photodetector/HFET optical receiver due to its possible application at 10.6 μm free space optical communication system at high bit rate.A rigorous noise model of the receiver has been developed for this *** calculate the total noise and sensitivity of the *** front-end of the receiver exhibits a sensitivity of -45 dBm at a bit rate of 1 Gb/s and -30 dBm at a bit rate of 10 Gb/s,and the total mean-square noise curren t〈i2n〉=5×10-15 A2 at a bit rate of 1 Gb/s an d〈i2n〉 =10-12 A2 at a bit rate of 10 Gb/s,and a 3-dB bandwidth of 10 GHz.

关键词： Hg HFET Sensitivity analysis of an HgCdTe based photovoltaic receiver for long-wavelength free space optical communication systems free

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Surface micromorphology and nanostructures evolution in hybrid laser processes of slicing and polishing single crystal 4H-SiC

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Journal of Materials Science & Technology 2024年第17期184卷 235-244页

作者： Yuhang Li Zhe Zhang Qi Song Haiyan Shi Yu Hou Song Yue Ran Wang Shunshuo Cai Zichen Zhang microelectronics Instruments and Equipment R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China International research centre for Nano Handling and Manufacturing of China Changchun University of Science and TechnologyChangchun 130022China

Slicing and post-treatment of SiC crystals have been a significant challenge in the integrated circuit and microelectronics *** compete with wire-sawing and mechanical grinding technology,a promis-ing approach combining laser slicing and laser polishing technologies has been innovatively applied to increase utilization and decrease damage defects for single crystal *** material utiliza-tion has been achieved in the hybrid laser processes,where material loss is reduced by 75%compared to that of conventional machining *** any special process control or additional treat-ment,an internally modified layer formed by laser slicing can easily separate the 4H-SiC crystals using an external force of about∼3.6 *** modified layer has been characterized using a micro-Raman method to determine residual *** sliced surface exhibits a combination of smooth and coarse appearances around the fluvial morphology,with an average surface roughness of over S_(a) 0.89μ*** amorphous phase surrounds the SiC substrate,with two dimensions of lattice spacing,d=0.261 nm and d=0.265 nm,confirmed by high-resolution transmission electron microscopy(HRTEM).The creation of laser-induced periodic surface nanostructures in the laser-polished surface results in a flatter surface with an average roughness of less than S_(a) 0.22μ*** to the extreme cooling rates and multiple thermal cy-cles,dissociation of Si-C bonding,and phase separation are identified on the laser-polished surface,which is much better than that of the machining *** anticipate that this approach will be applicable to other high-value crystals and will have promising viability in the aerospace and semiconductor industries.

关键词： Laser polishing Silicon carbide Internal modification Laser slicing Surface quality Microstructure

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Physics based circuit compatible model for hybrid antiferroelectric random access memory

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Science China(Information Sciences) 2025年第1期 396-397页

作者： Qiuxia WU Yue PENG Wenwu XIAO Wenxuan MA Shuo ZHANG Litao SUN Chunfu ZHANG Xiaohua MA Yue HAO School of microelectronics Xidian University Xi'an Uni IC Semiconductors

Since the discovery of HfO2-based ferroelectric （FE） materials in 2011,considerable advancements have been made in material preparation,mechanism research,and device realization [1].Consequently,these materials are now regarded as leading candidates for embedded non-volatile memory（eNVM）.Beyond eNVM applications,recent studies have demonstrated that memory devices with antiferroelectric（AFE） films can achieve high response speeds,low latency,and reduced power consumption while maintaining excellent endurance characteristics [2,3].Additionally,the typical double hysteresis loops and multiple non-overlapping polarization current peaks of AFE films offer a novel approach to designing multistate ***,in order to further promote the application of high storage density AFE,an AFRAM electronic design automation （EDA） model must be developed,and it has yet to be proposed.

关键词：

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A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior

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Journal of Semiconductors 2015年第2期36卷 92-98页

作者：刘松单光宝谢成民杜欣荣 Department of Postgraduates Xian Microelectronics Technology Research Institute

The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency- dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.

关键词： 3D IC TSV TSV electrical model MOS effect transmission line

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A novel 10-nm physical gate length double-gate junction field effect transistor

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Chinese Physics B 2008年第2期17卷 685-689页

作者：侯晓宇黄如陈刚刘晟张兴俞滨王阳元 Institute of microelectronics Peking University NASA Ames research Center

A novel double-gate （DG） junction field effect transistor （JFET） with depletion operation mode is proposed in this paper. Compared with the conventional DG MOSFET, the novel DG JFET can achieve excellent performance with square body design, which relaxes the requirement on silicon film thickness of DG devices. Moreover, due to the structural symmetry, both p-type and n-type devices can be realized on exactly the same structure, which greatly simplifies integration. It can reduce the delay by about 60% in comparison with the conventional DG MOSFETs.

关键词： MOSFET double-gate MOSFET depletion operation mode

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