A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior

作     者：刘松 单光宝 谢成民 杜欣荣 

作者机构：Department of Postgraduates Xian Microelectronics Technology Research Institute 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第2期

页      面：92-98页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National Defense Basic Scientific Research Program of China(No.A0320132012) 

主　　题：3D IC TSV TSV electrical model MOS effect transmission line 

摘      要：The analytical model of voltage-controlled MOS capacitance of tapered through silicon via （TSV） is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency- dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.