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A new horizon for neuroscience:terahertz biotechnology in brain research

Neural Regeneration Research 2025年第2期20卷 309-325页

作者： Zhengping Pu Yu Wu Zhongjie Zhu Hongwei Zhao Donghong Cui Shanghai Key Laboratory of Psychotic Disorders Shanghai Mental Health CenterShanghai Jiao Tong University School of MedicineShanghaiChina Department of Psychiatry Kangci Hospital of JiaxingTongxiangZhejiang ProvinceChina Shanghai Synchrotron Radiation facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghaiChina Key Laboratory of Interfacial Physics and Technology Shanghai Institute of Applied PhysicsChinese Academy of ScienceShanghaiChina National facility for Protein Science in Shanghai Shanghai Advanced Research InstituteChinese Academy of SciencesShanghaiChina

Terahertz biotechnology has been increasingly applied in various biomedical fields and has especially shown great potential for application in brain *** this article,we review the development of terahertz biotechnology and its applications in the field of *** evidence indicates promising prospects for the use of terahertz spectroscopy and terahertz imaging techniques in the diagnosis of amyloid disease,cerebrovascular disease,glioma,psychiatric disease,traumatic brain injury,and myelin *** vitro and animal experiments have also demonstrated the potential therapeutic value of terahertz technology in some neuropsychiatric *** the precise underlying mechanism of the interactions between terahertz electromagnetic waves and the biosystem is not yet fully understood,the research progress in this field shows great potential for biomedical noninvasive diagnostic and therapeutic ***,the biosafety of terahertz radiation requires further exploration regarding its two-sided efficacy in practical *** review demonstrates that terahertz biotechnology has the potential to be a promising method in the field of neuropsychiatry based on its unique advantages.

关键词： biological effect brain neuron neuropsychiatry neuroscience non-thermal effect terahertz imaging terahertz radiation terahertz spectroscopy terahertz technology

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Constructing quasi-2D perovskite to collect hot carriers to reduce open-circuit voltage loss for efficient inverted perovskite solar cells

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Science China Chemistry 2025年

作者： Lei Gu Xing Li Chao Wu Yang Feng Chunming Yang Lin Song Frontiers Science Center for Flexible Electronics Institute of Flexible Electronics Northwestern Polytechnical University Shanghai Synchrotron Radiation facility Shanghai Advanced Research Institute Chinese Academy of Sciences

Inverted perovskite solar cells （PSCs） have received great attention owing to the high certificated power conversion efficiency（PCE） reaching 26.7%. However, interfacial charge recombination is far superior to perovskite bulk charge recombination due to the use of fullerenes and their derivatives in inverted perovskite solar cells, which induces devastating open circuit voltage（VOC） losses. For this reason the present work attempts to use 4-chloropiperidine hydrochloride for the upper surface modification of perovskite to construct a quasi-two-dimensional （2D） structure with suitable 2D layer widths （n=2, 3 dominant）,which has a smaller electron carrier transport barrier without sacrificing short-circuit current （JSC） in the device. This strategy effectively passivates the interfacial defect states while promoting energy level alignment to achieve carrier dissociation and equilibrium transport at the interface, which in turn resulted in improved fill factor （FF）. In addition, additional energy levels are provided by 2D perovskites to collect hot carriers, resulting in improved device open circuit voltage （VOC）. As a result, the device PCE increases from 22.37%to 24.11%after the 4CPD treatment. In addition, the 4CPD-treated PSCs maintain 90%of the initial PCE after storage in an N2atmosphere at 50°C for 1,080 h, whereas the control devices show a 15%PCE loss under the same aging conditions. This work provides new opportunities to suppress interfacial charge recombination in inverted devices.

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Diffractive Deep Neural Networks at Visible Wavelengths

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Engineering 2021年第10期7卷 1483-1491页

作者： Hang Chen Jianan Feng Minwei Jiang Yiqun Wang Jie Lin Jiubin Tan Peng Jin Center of Ultra-precision Optoelectronic Instrument Harbin Institute of TechnologyHarbin 150001China nanofabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Key Laboratory of micro-Systems and micro-Structures Manufacturing Ministry of EducationHarbin Institute of TechnologyHarbin 150001China

Optical deep learning based on diffractive optical elements offers unique advantages for parallel processing,computational speed,and power *** landmark method is the diffractive deep neural network(D^(2) NN)based on three-dimensional printing technology operated in the terahertz spectral *** the terahertz bandwidth involves limited interparticle coupling and material losses,this paper extends D^(2) NN to visible wavelengths.A general theory including a revised formula is proposed to solve any contradictions between wavelength,neuron size,and fabrication limitations.A novel visible light D^(2) NN classifier is used to recognize unchanged targets(handwritten digits ranging from 0 to 9)and targets that have been changed(i.e.,targets that have been covered or altered)at a visible wavelength of 632.8 *** obtained experimental classification accuracy(84%)and numerical classification accuracy(91.57%)quantify the match between the theoretical design and fabricated system *** presented framework can be used to apply a D^(2) NN to various practical applications and design other new applications.

关键词： Optical computation Optical neural networks Deep learning Optical machine learning Diffractive deep neural networks

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A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties

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Journal of Semiconductors 2023年第6期44卷 7-23页

作者： Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang School of nano Technology and nano Bionics University of Science and Technology of ChinaHefei 230026China nano Fabrication facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

Power electronic devices are of great importance in modern *** decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion *** the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device *** gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been ***,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic ***,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been *** article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)*** key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed.

关键词： enhancement mode FETs β-Ga_(2)O_(3)

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An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a nano Void Channel

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Chinese Physics Letters 2018年第3期35卷 106-109页

作者：赵德胜刘冉付凯于国浩蔡勇黄宏娟王逸群孙润光张宝顺 The State Key Laboratory of ASIC and Systems School of Information Science and TechnologyFudan University nano Fabrication facility Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences

We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.

关键词： Ga An Al N/GaN Lateral Field Emission Device with a nano Void Channel

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Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition

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Chinese Physics Letters 2020年第6期37卷 115-118页

作者： Yu Zhao Yan Teng Jing-Jun Miao Qi-Hua Wu Jing-Jing Gao Xin Li Xiu-Jun Hao Ying-Chun Zhao Xu Dong Min Xiong Yong Huang Key Lab of nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China nano-fabrication facility Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China

Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal-organic chemical vapor deposition *** formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and itsⅠ-Ⅴcharacteristics.A cut-off wavelength around 5μm was determined in 77 K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640μm *** preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.

关键词： InAs/GaSb dopant planar

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Influence of introducing Zr,Ti,Nb and Ce elements on externally solidified crystals and mechanical properties of high-pressure die-casting Al–Si alloy

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International Journal of Minerals,Metallurgy and Materials 2025年第1期32卷 147-153页

作者： Junjie Li Wenbo Yu Zhenyu Sun Weichen Zheng Liangwei Zhang Yanling Xue Wenning Liu Shoumei Xiong Center of Materials Science and Engineering School of Mechanical and Electronic Control EngineeringBeijing Jiaotong UniversityBeijing 100044China Traffic&Transportation Engineering Central South UniversityChangsha 410075China Shanghai Synchrotron Radiation facility Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China School of Materials Science and Engineering Tsinghua UniversityBeijing 100084China

High pressure die casting(HPDC)AlSi10Mn Mg alloy castings are widely used in the automobile *** can optimize the mechanical properties of castings through heat treatment,while the release of thermal stress arouses the deformation of large integrated ***,the development of non-heat treatment Al alloys is becoming the hot *** addition,HPDC contains externally solidified crystals(ESCs),which are detrimental to the mechanical properties of *** achieve high strength and toughness of non-heat treatment die-casting Al-Si alloy,we used AlSi9Mn alloy as matrix with the introduction of Zr,Ti,Nb,and *** influences on ESCs and mechanical properties were systematically investigated through three-dimensional reconstruction and thermodynamic *** results reveal that the addition of Ti increased ESCs'size and porosity,while the introduction of Nb refined ESCs and decreased ***,large-sized Al_3(Zr,Ti)phases formed and degraded the mechanical *** introduction of Ce resulted in the poisoning effect and reduced mechanical properties.

关键词： aluminium alloy high-pressure die-casting externally solidified crystals non-heat treatment

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Review of laser diagnostics at the Vulcan laser facility

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High Power Laser Science and Engineering 2015年第3期3卷 3-12页

作者： Ian Musgrave Marco Galimberti Alexis Boyle Cristina Hernandez-Gomez Andrew Kidd Bryn Parry Dave Pepler Trevor Winstone John Collier Central Laser facility Science and Technology Facilities CouncilRAL

In this paper we review the provision of the laser diagnostics that are installed on the Vulcan laser facility. We will present strategies for dealing with the energy of high energy systems and with ways of handling the beam sizes of the lasers. We present data captured during typical experimental campaigns to demonstrate their reliability and variation in shot to shot values.

关键词： calorimeter high power laser laser diagnostics pulse energy

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Mainchain conformation ordering self-assembly tailored room temperature phosphorescence emission

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Science China Chemistry 2025年第1期68卷 329-336页

作者： Yuzhu Li Yumeng Gao Feng Tian Yu Wang Yuan Yao Shaoliang Lin Xiang Ma Binbin Xu Shanghai Key Laboratory of Advanced Polymeric Materials Key Laboratory for Ultrafine Materials of Ministry of Education School of Materials Science and Engineering East China University of Science and Technology Shanghai Synchrotron Radiation facility Shanghai Advanced Research Institute Chinese Academy of Sciences Key Laboratory for Advance Materials and Feringa Noble Prize Scientist Joint Research Centre Frontiers Science for Materiobiology and Dynamic Chemistry School of Chemistry and Molecular Engineering East China University of Science & Technology

Developing organic room-temperature phosphorescence （RTP） materials with a wide range of tunable-emission is significant in expanding the applications of RTP ***,we rationally designed amphiphilic alternating copolymers poly(1,2-bis（4-alkoxyphenyl）ethane-1,2-dione-alt-（ethylene glycol）x)(P（Bz-alt-EGx）) that combined the advantage of alternating benzil and EGxskeleton,and tunable mainchain *** a mainchain conformation ordering assembly （COA） process,P（Bz-alt-EGx） self-assembled into well-defined platelets,and such assemblies emitted blue RTP at ca.425 nm due to the ordered folded-chain conformation and confined *** contrast,traditional self-assembly （TA） of P（Bz-alt-EGx） obtained less ordered aggregates,such as asymmetric worms,vesicles,and rod-like *** resultant less ordered aggregates exhibited yellow-green RTP at ca.550 *** wide-tuning RTP emission in solution （between blue and yellow-green,over125 nm） is realized using the P（Bz-alt-EGx） alternating copolymers under the treatment of different self-assembly *** study uncovers a new strategy to tailor the RTP emission through different self-assembly pathways and holds great promise for the fabrication of advanced optical materials.

关键词： self-assembly conformation ordering alternating copolymer phosphorescence emission

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A preliminary experimental validation of superposition strategy in thermal management of integrated circuit with multiple hot-spots

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Science China(Technological Sciences) 2014年第11期57卷 2138-2143页

作者： LIU Kun PI YuDan WANG Wei LI ZhiHong CHEN Jing JIN YuFeng Institute of microelectronics Peking University National Key Laboratory of Science and Technology on micro/nano Fabrication

Thermal management is a key issue in the integrated circuit(IC)*** this paper,the superposition strategy was experimentally validated using a modeling IC device,which was fabricated by laboratory-level microfabrication *** thin film resistors on the top of dielectric layer were used to analogize the multiple hot-spots in the modeling IC *** measured temperature rise with multiple hot-spots agrees well with the predictions given by the superposition *** the help of the superposition strategy,thermal management of IC device can be significantly simplified by decomposing the system into sub-systems and optimizing each part *** influence coefficients in the superposition strategy extracted from the experimental measurement offer the IC designers a useful engineering tool to facility the thermal optimization and evaluate the thermal performance of IC devices.

关键词： superposition strategy thermal management modeling IC device multiple hot-spots influence coefficient

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