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Potential role of tanycyte-derived neurogenesis in Alzheimer's disease

Neural Regeneration Research 2025年第6期20卷 1599-1612页

作者： Guibo Qi Han Tang Jianian Hu Siying Kang Song Qin Department of Anatomy Histologyand EmbryologySchool of Basic Medical SciencesFudan UniversityShanghaiChina State key laboratory of Medical Neurobiology and moe Frontiers Center for Brain Science Fudan UniversityShanghaiChina

Tanycytes, specialized ependymal cells located in the hypothalamus, play a crucial role in the generation of new neurons that contribute to the neural circuits responsible for regulating the systemic energy balance. The precise coordination of the gene networks controlling neurogenesis in naive and mature tanycytes is essential for maintaining homeostasis in adulthood. However, our understanding of the molecular mechanisms and signaling pathways that govern the proliferation and differentiation of tanycytes into neurons remains limited. This article aims to review the recent advancements in research into the mechanisms and functions of tanycyte-derived neurogenesis. Studies employing lineage-tracing techniques have revealed that the neurogenesis specifically originating from tanycytes in the hypothalamus has a compensatory role in neuronal loss and helps maintain energy homeostasis during metabolic diseases. Intriguingly,metabolic disorders are considered early biomarkers of Alzheimer's disease. Furthermore,the neurogenic potential of tanycytes and the state of newborn neurons derived from tanycytes heavily depend on the maintenance of mild microenvironments, which may be disrupted in Alzheimer's disease due to the impaired blood–brain barrier ***, the specific alterations and regulatory mechanisms governing tanycyte-derived neurogenesis in Alzheimer's disease remain unclear. Accumulating evidence suggests that tanycyte-derived neurogenesis might be impaired in Alzheimer's disease, exacerbating neurodegeneration. Confirming this hypothesis, however, poses a challenge because of the lack of long-term tracing and nucleus-specific analyses of newborn neurons in the hypothalamus of patients with Alzheimer's disease. Further research into the molecular mechanisms underlying tanycyte-derived neurogenesis holds promise for identifying small molecules capable of restoring tanycyte proliferation in neurodegenerative diseases. This line of investigation could pro

关键词： Alzheimer's disease blood–brain barrier ependymoglial cells hypothalamus metabolic diseases neural stem cells neurogenesis neuroinflammatory diseases neurons tanycyte

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A Robust on-Wafer Large Signal Transistor Characterization Method at mm-Wave Frequency

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Chinese Journal of Electronics 2019年第4期28卷 871-877页

作者： SU Jiangtao CAI Jialin ZHENG Xing SUN Lingling key laboratory of rf circuits and systems Ministry of Education

Accurate on-wafer large signal characterization of rf transistor is crucial for the optimum design of wireless communication circuits. We report a novel and systematic measurement method for the accurate acquisition of input and output power of on-wafer transistors up to 40 GHz. This method employs external couplers to extract the travelling waves, combined with a novel large signal calibration algorithm to calculate the power at on-wafer probe tip. The accuracy of this method was bench marked versus conventional approaches in a real measurement bench, and further been verified by characterizing the large signal response of a 0.25μm GaN HEMT device. It is concluded that the measurement uncertainty has been greatly decreased with this new method, especially at mm-wave frequencies.

关键词： Calibration Nonlinear measurement rf power amplifier mm-wave band On-wafer test

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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

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Journal of Zhejiang University-Science C(Computers and Electronics) 2013年第3期14卷 205-213页

作者： Li-heng LOU Ling-ling SUN Jun LIU Hai-jun GAO Institute of VLSI Design Zhejiang University moe key laboratory of rf circuits and systems Hangzhou Dianzi University

This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong *** simulation convergence is greatly improved by this *** original scheme is developed to extract the parameters of the PSP charge model based on S-parameters *** interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector *** model is verified with an LC VCO design,and exhibits excellent convergence during *** results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency(rf) circuit design.

关键词： Layout optimizing Modeling PSP Charge model Cross-coupled Metal-oxide-semiconductor(MOS) Voltage controlled oscillator(VCO)

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A Fast Two-Tone Active Load-Pull Algorithm for Assessing the Non-linearity of rf Devices

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Chinese Journal of Electronics 2022年第1期31卷 25-32页

作者： SU Jiangtao CAI Jialing ZHENG Xing SUN Lingling key laboratory of rf circuits and systems Ministry of Education key laboratory of Large Scale Integrated circuits Design Zhejiang Province

Radio frequency(rf) devices used in modern wireless systems must meet increasingly complicated spectral constraints while still operating with high power efficiency. A fast real-time two-tone active loadpull algorithm is proposed to assess the relationship between nonlinear performance with associated device load impedance variations. This algorithm employs real time measurement data to extract two-tone local nonlinear behaviour model, which is further used for the prediction of injected signal value in the active real-time loadpull system, therefore minimizing the number of iterations required for load emulation. The proposed method was validated on a real two-tone load-pull measurement bench using off-the-shelf instruments. The result shows that the measurement speed has been greatly increased without sacrifice of the impedance emulation *** intelligent two-tone load-pull algorithm is expected to be applied in the designing of modern communication system and radar transmitters, as well as the validation of the models of radio frequency transistors.

关键词： measurement speed real-time load-pull system spectral constraints radio frequency transistors real time measurement data intelligent two-tone load-pull algorithm two-tone local nonlinear behaviour model radio frequency devices impedance emulation accuracy modern communication system modern wireless systems nonlinearity radiocommunication rf devices associated device load impedance variations radar transmitters injected signal value two-tone load-pull measurement bench load emulation high power efficiency fast real-time two-tone active load-pull algorithm nonlinear performance

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High-performance transparent graphene-based antennas

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Science China(Technological Sciences) 2025年第2期68卷 306-314页

作者： Chaoye HONG Lusong WEI Weijia WANG Youmei TANG Qinghai ZHU Jiangtao HUANGFU Mingsheng XU College of Integrated circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang UniversityHangzhou 310027China College of Information Science and Electronic Engineering Zhejiang UniversityHangzhou 310027China

With the continuous development of wireless communication technology,applications in the military,aerospace,and vehicle wireless communication sectors have demanded miniaturized and aesthetically pleasing *** antennas,which combine the advantages of optical and radio-frequency(rf)technologies,have become a popular research ***,existing transparent antennas often suffer from complex preparation processes,fragile materials,poor conductivity,and low optical ***,we develop hybrid conductive thin films using graphene and silver nanowires,achieving a transmittance of 86% and a sheet resistance of 7.8Ω/sq with high environmental *** demonstrate the suitability of this nanocomposite in two applications:a transparent ultrahigh-frequency rf-identification tag folded dipole antenna and a transparent X-band microwave half-wave dipole *** antennas offer high gain,high radiation efficiency,and small size,indicating that transparent graphene-based antennas have remarkable potential for intelligent information sensor systems.

关键词： antenna transparent rfID small size graphene silver nanowires

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Scalable modeling and comparison for spiral inductors using enhanced 1-π and 2-π topologies

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Journal of Semiconductors 2010年第5期31卷 126-132页

作者：邹欢欢孙玲玲文进才刘军 key laboratory of rf circuits and systems Ministry of EducationHangzhou Dianzi University

Two different scalable models developed based on enhanced 1-πand 2-πtopologies are presented for onchip spiral inductor *** elements used in the two topologies for accurately predicting the characteristics of spiral inductors at radio frequencies are constructed in geometry-dependent equations for scalable *** a comparison between the 1-πand 2-πscalable models is made from the following aspects：the complexity of equivalent circuit models and parameter-extraction procedures,scalable rules and the accuracy of scalable *** two scalable models are further verified by the excellent match between the measured and simulated results on extracted parameters up to self-resonant frequency（Srf） for a set of spiral inductors with different L,R and N,which are fabricated by employing 0.18-μm 1P6M rf CMOS technology.

关键词： rf-CMOS on-chip spiral inductor scalable model 1-π 2-π

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rf CMOS modeling:a scalable model of rf-MOSFET with different numbers of fingers

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Journal of Semiconductors 2010年第11期31卷 33-37页

作者：余裕宁孙玲玲刘军 key laboratory of rf circuits and systems of Ministry of Education Hangzhou Dianzi University

A novel scalable model for multi-finger rf MOSFETs modeling is *** the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the *** model is further verified using a standard 0.13μm rf CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μ*** agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.

关键词： rf-MOSFETs scalable model parasitic components layout-based

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rf CMOS modeling:a novel empirical large-signal model for an rf-MOSFET

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Journal of Semiconductors 2010年第4期31卷 52-56页

作者：孙玲玲吕彬义刘军陈磊 key laboratory of rf circuits and systems Ministry of EducationHangzhou Dianzi University

A novel empirical model for large-signal modeling of an rf-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm rf CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.

关键词： rf-MOSFET large-signal model self heating

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A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs

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Journal of Semiconductors 2014年第3期35卷 70-78页

作者：刘军余志平孙玲玲 key laboratory of rf circuits and systems Ministry of Education Hangzhou Dianzi University

A complete and accurate surface potential based large-signal model for compound semiconductor HEMTs is presented. A surface potential equation resembling the one used in conventional MOSFET models is achieved. The analytic solutions from the traditional surface potential theory that developed in MOSFET models are inherited. For core model derivation, a novel method is used to realize a direct application of the standard surfacepotentialmodelofMOSFETsforHEMTmodeling,***-order derivatives of I–V /C–V remain continuous, making the model suitable for rf large-signal applications. Furthermore, the self-heating effects and the transconductance dispersion are also modelled. The model has been verified through comparison with measured DC IV, Gummel symmetry test, CV, minimum noise figure, small-signal Sparameters up to 66 GHz and single-tone input power sweep at 29 GHz for a 475 m0.1 m InGaAs/GaAs power pHEMT, fabricated at a commercial foundry.

关键词： surface-potential based compound semiconductor HEMTs large-signal model

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A low-phase-noise ring oscillator with coarse and fine tuning in a standard CMOS process

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Journal of Semiconductors 2012年第7期33卷 85-88页

作者：高海军孙玲玲邝小飞楼立恒 key laboratory of rf circuits and systems Ministry of EducationHangzhou Dianzi University

A low-phase-noise wideband ring oscillator with coarse and fine tuning techniques implemented in a standard 65 nm CMOS process is presented. Direct frequency modulation in the ring oscillator is analyzed and a switched capacitor array is introduced to produce the lower VCO gain required to suppress this effect. A two dimensional high-density stacked MOM-capacitor was adopted as the switched capacitor to make the proposed ring VCO compatible with standard CMOS processes. The designed ring VCO exhibits an output frequency from 480 to 1100 MHz, resulting in a tuning range of 78%, and the measured phase noise is -120 dBc/Hz @ 1 MHz at 495 MHz output. The VCO core consumes 3.84 mW under a 1.2 V supply voltage and the corresponding FOM is -169 dBc/Hz.

关键词： ring oscillator switched capacitor array phase noise MOM-capacitor standard CMOS

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