An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

作     者：Li-heng LOU Ling-ling SUN Jun LIU Hai-jun GAO 

作者机构：Institute of VLSI DesignZhejiang University MOE Key Laboratory of RF Circuits and SystemsHangzhou Dianzi University 

出 版 物：《Journal of Zhejiang University-Science C(Computers and Electronics)》 (浙江大学学报C辑（计算机与电子（英文版）)

年 卷 期：2013年第14卷第3期

页      面：205-213页

核心收录：

学科分类：0711[理学-系统科学] 07[理学] 08[工学] 081101[工学-控制理论与控制工程] 0811[工学-控制科学与工程] 071102[理学-系统分析与集成] 081103[工学-系统工程] 

基　　金：Project supported by the National Basic Research Program (973) of China (No. 2010CB327403) the National Natural Science Foundation of China (Nos. 61001066 and 61102027) 

主　　题：Layout optimizing Modeling PSP Charge model Cross-coupled Metal-oxide-semiconductor(MOS) Voltage controlled oscillator(VCO) 

摘      要：This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors(MOSFETs) with optimized layout in the voltage controlled oscillator(VCO).The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong *** simulation convergence is greatly improved by this *** original scheme is developed to extract the parameters of the PSP charge model based on S-parameters *** interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector *** model is verified with an LC VCO design,and exhibits excellent convergence during *** results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy,respectively,indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency(RF) circuit design.