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Thickness and sp3 bond modulation of（Ti/tetrahedral amorphous carbon）_n multilayer coatings

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Tungsten 2025年第1期7卷 152-160页

作者： Zhi-Jun Xie Jia-Lin Li Ling Gong Xiang-Li Zhong Hong-Jia Song Jin-Bin Wang National-Provincial laboratory of Special Function thin film Materials School of Materials Science and Engineering Xiangtan University

The durability of wear-resistant tetrahedral amorphous carbon（ta-C） coatings is intimately linked to their thickness and the concentration of *** enhance the lifespan of the coatings,we have prepared a multilayer coating consisting of alternating layers of Ti and ta-C,denoted as（Ti/ta-C）_n,using arc ion plating.A multi-layer structure in conjunction with stage cooling is employed to enhance the thickness and promote *** results indicate that the ID/IGvalue,representing the ratio of the intensity of the D peak to that of the G peak in Raman spectroscopy,decreases from 0.85 when no stage cooling is applied to 0.35 when stage cooling is employed,suggesting an enhancement in the fraction of sp3bonds within the *** obtained（Ti/ta-C）_n multilayer coating without peeling off has a maximum thickness of 1.14 μm,which is almost double that of the ta-C coating single layer *** the same time,the coating has a low coefficient of friction,down to 0.069,and maintains excellent friction properties with a wear rate of 3.4×10-6mm3·N-1·*** results conclusively show that the preparation technology can enhance both thickness and sp3bonding in ta-C coatings,significantly expanding their utility across tools,molds,and precision engineering components.

关键词： Arc ion plating Multilayer structure sp3 bond Ta-C coating Wear resistance

Performance enhancement of perovskite solar cells with Cs2PtI6-xBrx absorber layer based on numerical simulation

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Optoelectronics Letters 2025年

作者： Du Zuyan Yuan Yujie Hou Guofu Xin Yupeng Bi Jinlian Li Wei Tianjin Key laboratory of film Electronic and Communication Devices， School of Integrated Circuit Science and Engineering， Tianjin University of Technology Institute of Photoelectronic thin film Devices and Technology， Nankai University

Cs2TiBr6， characterized as a lead-free vacancy-ordered double perovskite material， demonstrates notable stability and photoelectric performance， rendering it suitable for application in perovskite solar cells. However， the experimental efficiency of this material is currently limited， achieving only 3.12%. This efficiency limitation primarily stems from the material’s wide bandgap， which results in insufficient light absorption. To address this issue， this study utilized Cs2PtI6-xBrxfor band structure fine-tuning. By adjusting the bandgap of Cs2PtI6-xBrxthrough Br-doping， not only was the alignment of the energy bandgap in the absorption layer effectively adjusted， but the cutoff range of light absorption was also significantly expanded. Setting the Cs2PtI6-xBrxbandgap to 1.4 eV resulted in optimal device performance. Additionally， comparative analyses aimed at boosting solar cell efficiency were performed on both hole transport and electron transport layer materials. Subsequently， the structure of the perovskite solar cell was optimized using an FTO/TiO2/Cs2TiBr6/Cs2PtI6-xBrx/Cu2O/Au configuration. Furthermore， the influence of the absorber layer thickness and defect density on device performance was studied. Ultimately， this configuration enabled the Cs2TiBr6/Cs2PtI6-xBrxsolar cell to achieve a peak conversion efficiency of 29.69%.

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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Science China(Information Sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials laboratory School of Microelectronics Southern University of Science and Technology State Key laboratory of Electronic thin films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

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Chinese Physics Letters 2015年第12期32卷 160-162页

作者：孙顶葛阳许盛之张力李宝璋王广才魏长春赵颖张晓丹 Institute of Photo Electronics thin film Devices and Technology and Key Laboratory of Photoelectronic Thin Film Devices and TechnologyNankai University

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.

关键词： Improvement of the Open Circuit Voltage of CZTSe thin-film Solar Cells by Surface Sulfurization Using SnS

Influence of selenium evaporation temperature on the structure of Cu_2ZnSnSe_4 thin film deposited by a co-evaporation process

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Journal of Semiconductors 2015年第4期36卷 74-77页

作者：孙顶许盛之张力陈泽葛阳王宁梁雪娇魏长春赵颖张晓丹 Institute of Photo Electronics thin film Devices and Technology Nankai UniversityKey Laboratory of Photoelectronic Thin Film Devices and Technology

Cu2ZnSnSe4 （CZTSe） thin film solar cells have been fabricated using a one-step co-evaporation technique. The structural properties of polycrystalline CZTSe films deposited at different selenium evaporation temperatures （TSe） have been investigated using X-ray diffraction spectra, scanning electron microscopy, and atomic force microscopy. A relationship between TSe and the secondary phases deposited in the initial stage is established to explain the experimental observations. The Se flux is not necessarily increased too much to reduce Sn loss and the consumption of Se during fabrication could also be reduced. The best solar cell, with an efficiency of 2.32%, was obtained at a medium Tse of 230 ℃ （active area 0.34 cm2）.

关键词： Cu2ZnSnSe4 one-step co-evaporation selenium flux thin film solar cells Sn loss

Raman scattering of polycrystalline GaSb thin films grown by the co-evaporation process

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Chinese Physics B 2009年第5期18卷 2012-2015页

作者：乔在祥孙云何炜瑜刘玮何青李长健 The Tianjin Key laboratory for Photoelectronics thin film Devices and Technology Nankai University

This paper reports that CaSb thin films have been co-deposited on soda-lime glass substrates. The GaSb thin film structural properties are characterized by Raman spectroscopy. The Sb-A1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature, which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease. In Raman spectra, the transverse optical （TO） mode intensity is stronger than that of the longitudinal optical （LO） mode, which indicates that all the samples are disordered. The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the CaSb thin film. A downshift of the TO and LO frequencies of the polycrystalline CaSb thin film to single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa. The uniaxial stress decreases with increasing substrate temperature. These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.

关键词： GaSb co-evaporation Raman stress

The effect of composition on structural and electronic properties in polycrystalline CuGaSe_2 thin film

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Chinese Physics B 2008年第8期17卷 3138-3142页

作者：张力何青徐传明薛玉明李长健孙云 The Tianjin Key laboratory for Photoelectronic thin film Devices and Technology Nankai University

Polycrystalline CuGaSe2 thin films on Mo-coated soda-lime glass substrates have been synthesized by coevaporation process from Cu, Ga and Se sources. Structural and electrical properties of the as-grown CuGaSe2 films strongly depend on the film composition. Stoichiometric CuGaSe2 is fabricated, as indicated by x-ray diffraction spectroscope （XRD） and x-ray fluorescence （XRF）. A two-phase region is composed of CuGaSe2 and Cu2-xSe phases for Cu-rich films, and CuGaSe2 and CuGa3Se5 phases for Ga-rich films, respectively. Morphological properties are detected by scanning electron microscope （SEM） for various compositional films, the grain sizes of the CuGaSe2films decrease with the extent of deviation from stoichiometric composition. Raman spectroscopy of Cu-rich samples shows that there exist large Cu-Se particles on the film surface. The results from Hall effect measurements for typical samples indicate that CuGaSe2 films are always of p-type semiconductor from Cu-rich to Ga-rich. Stoichiometric CuGaSe2 films exhibit relatively large mobility than any other compositional films. Finally, polycrystalline CuGaSe2 thin film solar cell with a best conversion efficiency of 6.02% has been achieved under the standard air mass （AM）1.5 spectrum for 100mW/cm^2 at room temperature （aperture area, 0.24cm^2）. The open circuit voltage of the CuGaSe2 solar cells is close to770 mV.

关键词： CuGaSe2 thin films CuGa3Se5 Cu2-xSe

Interfaces of high-efficiency kesterite Cu_2ZnSnS(e)_4 thin film solar cells

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Chinese Physics B 2018年第1期27卷 2-18页

作者：高守帅姜振武武莉敖建平曾玉孙云张毅 Institute of Photoelectronic thin film Devices and Technology Tianjin Key Laboratory of Photoelectronic Thin Film Devices and TechnologyNankai University The MOE Key laboratory of Weak-Light Nonlinear Photonics School of Physics Nankai University

Cu2ZnSnS（e）4 （CZTS（e）） solar cells have attracted much attention due to the elemental abundance and the non- toxicity. However, the record efficiency of 12.6% for CuzZnSn（S,Se）4 （CZTSSe） solar cells is much lower than that of Cu（In,Ga）See （CIGS） solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount inves- tigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS（e） solar cells, including：（i） the band alignment optimization at buffer/CZTS（e） interface, （ii） tailoring the thickness of MoS（e）2 interfacial layers between CZTS（e） absorber and Mo back contact, （iii） the passivation of rear interface, （iv） the passivation of front interface, and （v） the etching of secondary phases.

关键词： Cu2ZnSnS4 solar cells kesterite interface passivation

Numerical simulation of a triple-junction thin-film solar cell based on μc-Si_(1-x)Ge_x :H

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Chinese Physics B 2013年第9期22卷 680-685页

作者：黄振华张建军倪牮曹宇胡子阳李超耿新华赵颖 Institute of Photo-electronics thin film Devices and Technique Nankai University Key laboratory of Photo-electronics thin film Devices and Technique Key laboratory of Photo-electronic Information Science and Technology of Ministry of Education Nankai University

In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.

关键词： a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell simulation analyses of microelectronic andphotonic structures (AMPS-1D)