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Design and Fabrication of a 400 GHz InP-Based Arrayed Waveguide Grating with Flattened Spectral Response

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Chinese Physics Letters 2015年第5期32卷 55-58页

作者： ZHANG Xi-Lin LIU Song Tao LU Dan ZHANG Rui-Kang JI Chen Key laboratory of semiconductors Materials Institute of SemiconductorsChinese Academy of Sciences

A four-channel 400 GHz channel spacing InP-based arrayed waveguide grating with a flattened wavelength re- sponse by employing a multimode interference coupler at the input waveguide of the filter is prepared. The fabricated devices show a flattened spectral response with a broadened 3-dB bandwidth up to 3.5 nm, interchan- nel non-uniformity of 〈0. 7dB and excellent match to the simulation results.

关键词： AWG InP Design and Fabrication of a 400 GHz InP-Based Arrayed Waveguide Grating with Flattened Spectral Response

Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators

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Chinese Physics B 2010年第7期19卷 333-337页

作者：张云霄廖栽宜赵玲娟潘教青朱洪亮王圩 Key laboratory of semiconductors Materials Institute of SemiconductorsChinese Academy of Sciences

We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photo- diodes （EC-UTC-PDs） and intra-step quantum well electroabsorption modulators （IQW-EAMs） on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 t2 thin-film resistor and a bypass capacitor integrated on a chip.

关键词： electroabsorption modulator intra-step quantum wells uni-traveling-carrier RF-gain

Efficient and Stable Perovskite Solar Cells and Modules Enabled by Tailoring Additive Distribution According to the Film Growth Dynamics

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Nano-Micro Letters 2025年第2期17卷 387-400页

作者： Mengen Ma Cuiling Zhang Yujiao Ma Weile Li Yao Wang Shaohang Wu Chong Liu Yaohua Mai Institute of New Energy Technology College of Physics&Optoelectronic EngineeringJinan UniversityGuangzhou 510632People’s Republic of China Key laboratory of New semiconductors and Devices of Guangdong Higher Education Institutes Jinan UniversityGuangzhou 510632People’s Republic of China Guangdong Mellow Energy Co. LimitedYuanming RoadZhuhai 519075GuangdongPeople’s Republic of China

Gas quenching and vacuum quenching process are widely applied to accelerate solvent volatilization to induce nucleation of perovskites in blade-coating *** this work,we found these two pre-crystallization processes lead to different order of crystallization dynamics within the perovskite thin film,resulting in the differences of additive *** then tailor-designed an additive molecule named 1,3-bis(4-methoxyphenyl)thiourea to obtain films with fewer defects and holes at the buried interface,and prepared perovskite solar cells with a certified efficiency of 23.75%.Furthermore,this work also demonstrates an efficiency of 20.18%for the large-area perovskite solar module(PSM)with an aperture area of 60.84 cm^(2).The PSM possesses remarkable continuous operation stability for maximum power point tracking of T_(90)>1000 h in ambient air.

关键词： Gas quenching Additive distribution Buried passivation Blade coating Crystallization dynamics

Fabrication and Characterization of High Power 1064-nm DFB Lasers

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Chinese Physics Letters 2013年第11期30卷 91-93页

作者： TAN Shao-Yang ZHAI Teng LU Dan WANG Wei ZHANG Rui-Kang JI Chen Key laboratory of semiconductors Materials Institute of SemiconductorsChinese Academy of SciencesBeijing 100083

A ridge waveguide distributed-feedback laser emitting at 1064 nm is *** low-temperature-grown In_(0.21)Ga_(0.79)As/GaAs quantum wells are employed as the active layer.A second-order grating is formed by holographic ph... 详细信息

关键词： waveguide laser Lasers

The room temperature ferromagnetism in highly strained twodimensional magnetic semiconductors

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Journal of semiconductors 2023年第4期44卷 13-14页

作者： Dahai Wei State Key laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In spintronics,it is still a challenge in experiments to realize the ferromagnetic semiconductors with Curie temperature Tc above room *** 2017,the successful synthesis of two-dimensional(2D)van der Waals ferromagnetic semiconductors,including the monolayer CrI3 with Tc=45 K[1]and the bilayer Cr2Ge2Te6 with Tc=28 K[2]in experiments,has attracted extensive attention in the 2D ferromagnetic *** of the key problems is to find suitable 2D magnetic semiconductors,which can have room-temperature operation as required in applications.

关键词： temperature semiconductors ferromagnetic

A MOCVD-Growth Multi-Wavelength Laser Monolithically Integrated on InP

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Chinese Physics Letters 2014年第6期31卷 98-101页

作者：张希林陆丹张瑞康王圩吉晨 Key laboratory of semiconductors Materials Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

We present an arrayed waveguide grating multi-wavelength laser （MWL）. The device is operated with five wave- length channels of 194 GHz spacing around a central wavelength of 1.57μm. A side mode suppression ratio of better than 35 dB for all channels is demonstrated. A very attractive feature of the MWL is that it has been realized by a novel one step regrowth approach to achieve a high quality active and passive interface.

关键词： LASER photochemistry PLASMA waveguides WAVEGUIDES RESEARCH ELECTRIC conductors INDUCTIVELY coupled plasma spectrometry PHYSICAL & theoretical chemistry

High Power 1060 nm Distributed Feedback Semiconductor Laser

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Chinese Physics Letters 2014年第2期31卷 52-54页

作者：翟腾谭少阳陆丹王圩张瑞康吉晨 Key laboratory of semiconductors Materials Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

A GaAs based high power distributed feedback （DFB） semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 106Ohm with a side mode suppression ratio of larger than 50dB.

关键词： SEMICONDUCTOR lasers FEEDBACK control systems HIGH power lasers DIFFRACTION gratings WAVEGUIDES

Fabrication and optimization of 1.55-μm InGaAsP/InP high-power semiconductor diode laser

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Journal of semiconductors 2015年第9期36卷 89-92页

作者：柯青谭少阳刘松涛陆丹张瑞康王圩吉晨 Key laboratory of semiconductors Materials Institute of SemiconductorsChinese Academy of Sciences

A comprehensive design optimization of 1.55-#m high power InGaAsP/InP board area lasers is performed aiming at increasing the internal quantum efficiency （ηi） while maintaining the low internal loss （αi） of the device, thereby achieving high power operation. Four different waveguide structures of broad area lasers were fabricated and characterized in depth. Through theoretical analysis and experiment verifications, we show that laser structures with stepped waveguide and thin upper separate confinement layer will result in high αi and overall slope efficiency. A continuous wave （CW） single side output power of 160 mW was obtained for an uncoated laser with a 50μm active area width and 1 mm cavity length.

关键词： high power laser InP internal loss internal quantum efficiency

A facile and non-destructive quartz fiber shadow mask process for the sub-micrometer device fabrication on two-dimensional semiconductors

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Rare Metals 2022年第1期41卷 319-324页

作者： Li-An Li Fang-Yuan Zhao Shen-Qiang Zhai Feng-Qi Liu Zhong-Ming Wei Key laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

The normal fabrication process for electronic and optoelectronic devices can bring in significant modifications on two-dimensional(2D)semiconductors’intrinsic *** address this issue,some dry methods have been developed,such as“transfer contact”method and“shadow mask technology”.However,the method that can combine the advantages of low cost,non-destruction,and high reliability at sub-micrometer scale is rarely ***,we demonstrate a fabrication technique using ultrafine quartz fibers as shadow *** this technique,sub-micrometer scale devices can be“all dry”fabricated facilely,and the intrinsic properties of 2D semiconductors are ***,the masking effect can be evaluated in situ based on the light interference between the quartz fiber and the substrate to increase the fabrication reliability.

关键词： quartz fiber process