A MOCVD-Growth Multi-Wavelength Laser Monolithically Integrated on InP

作     者：张希林 陆丹 张瑞康 王圩 吉晨 

作者机构：Key Laboratory of Semiconductors Materials Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2014年第31卷第6期

页      面：98-101页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61274046  61201103  61335009 and 61320106013  and the National High Technology Research and Development Program of China under Grant No 2013AA014202 

主　　题：LASER photochemistry PLASMA waveguides WAVEGUIDES RESEARCH ELECTRIC conductors INDUCTIVELY coupled plasma spectrometry PHYSICAL & theoretical chemistry 

摘      要：We present an arrayed waveguide grating multi-wavelength laser （MWL）. The device is operated with five wave- length channels of 194 GHz spacing around a central wavelength of 1.57μm. A side mode suppression ratio of better than 35 dB for all channels is demonstrated. A very attractive feature of the MWL is that it has been realized by a novel one step regrowth approach to achieve a high quality active and passive interface.