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Application of in-situ characterization techniques in modern aqueous batteries

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Rare Metals 2024年第8期43卷 3553-3575页

作者： Jia-Hao Wu Hong-Wei Cai Zhao-Hui deng Jean-Jacques Gaumet Yu Bao Wen Luo department of Physics State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingSchool of Materials Science and EngineeringWuhan University of Technology laboratoire de Chimie et physique:Approche Multi-Echelles Des Milieux Complexes (LCP-A2MC)Institut Jean Barriol Université de Lorraine department of Medicinal Chemistry Hubei College of Chinese Medicine

The development of high-performance aqueous batteries calls for an in-depth knowledge of their chargedischarge redox and failure mechanism,as well as a systematic understanding of the dynamic evolution of microstructure,phase composition,chemical composition,and local chemical environment of the materials for ***-situ characterization technology is expected to understand and reveal the problems faced by aqueous rechargeable batteries,such as the dissolution of electrode materials,the growth of metal negative electrode dendrites,passivation,corrosion,side reactions and a series of *** on this,typical in-situ characterization techniques and their basic mechanisms are summarized,including in-situ optical visualization,in-situ microscopy techniques(in-situ scanning electron microscopy(SEM),in-situ transmission electron microscopy(TEM)),in-situ X-ray techniques(in-situ X-ray diffraction(XRD),in-situ X-ray photoelectron spectroscopy(XPS),in-situ near-edge structural X-ray absorption spectroscopy(XANES)),and in-situ spectroscopy techniques(in-situ Raman spectroscopy,in-situ Fourier transform infrared(FTIR)).Moreover,some emerging techniques concerning aqueous battery research,especially gas evolution and materials dissolution issues,such as in-situ electrochemical quartz crystal microbalance(EQCM).in-situ fiber-optic sensing,in-situ gas chromatography(GC) are *** last,the applications of advanced in-situ characterizations in future research of aqueous batteries are emphasized and discussed,along with some of the remaining challenges and possible solutions.

关键词： Aqueous battery In-situ characterization Phase transformation Solid electrolyte interphase Zinc dendrite growth

Structural, Electronic and Optical Properties of Sc_xAl_1-xN alloys within DFT Calculations

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Journal of Applied Mathematics and Physics 2024年第2期12卷 569-584页

作者： Asma Said Yasmina Oussaifi Moncef Said laboratoire de la matière condensée et nanosciences Département de physique Faculté des sciences de Monastir Monastir Tunisie

Structural, electronic and optical properties of Sc-based aluminum-nitride alloy have been carried out with first-principles methods using both local density approximation (LDA) and Heyd-Scuseria-Ernzerhof (HSE) hybrid functional. This latter provides a more accurate description of the lattice parameters, enthalpy of formation, electronic and optical properties of our alloy than standard DFT. We found the transition from wurtzite to rocksalt structures at 61% of Sc concentration. By increasing the scandium concentration, the lattice parameters and the band gap decrease. The HSE band gap is in good agreement with available experimental data. The existence of the strong hybridization between Sc 3d and N 2p indicates the transport of electrons from Sc to N atoms. Besides, it is shown that the insertion of the Sc atom leads to the redshift of the optical absorption edge. The optical absorption of ScxAl1-xN is found to decrease with increasing Sc concentrations in the low energy range. Because of this, ScxAl1-xN have a great potential for applications in photovoltaics and photocatalysis.

关键词： DFT Electronic and Optical Properties ScAlN Hybrid Functional HSE

Surface morphology and electrochemical characterization of electrodeposited Ni-Mo nanocomposites as cathodes for hydrogen evolution

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Chinese Physics B 2015年第10期24卷 559-563页

作者： Elhachmi Guettaf Temam Hachemi Ben Temam Said Benramache laboratoire de physique des couches minces et applications Université de Biskra

In this work, we study the influences of current density on surface morphology and electrochemical characterization of electrodeposited Ni-Mo. The Ni-Mo composite coatings are deposited on pretreated copper substrates by electrolytic deposition. The Ni-Mo solution is taken from nickel sulfate fluid and ammonium heptamolybdate with 10 g/l. The Ni-Mo composite coatings are deposited at a temperature of 303 K with an applied current density of j dep= 10 A/dm2-30 A/*** find that the corrosion resistance is improved by incorporating Mo particles into Ni matrix in 0.6-M Na Cl solution. From the potentiodynamic polarization curve of electrodeposited Ni-Mo it is confirmed that the corrosion resistance decreases with increasing applied current density. The x-ray diffraction（XRD） analyses of Ni-Mo coatings indicate three phases of Mo Ni4, Mo1.24Ni0.76, and Ni3 Mo phases crystallites of nickel and molybdenum. The scanning electronic microscopy（SEM） tests indicate that Ni-Mo coatings present cracks and pores.

关键词： Ni-Mo electrolytic deposition corrosion resistance potentiodynamic polarization plating current density

Properties of n-type SnO_2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications

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Journal of Semiconductors 2015年第12期36卷 34-37页

作者： H.Bendjedidi A.Attaf H.Saidi M.S.Aida S.Semmari A.Bouhdjar Y.Benkhetta laboratoire de physique des couches minces et applications Université de Biskra laboratoire des couches minces et Interfaces Université Mentouri

Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures （300, 350, 400, 450 and 500 ℃）. The structural studies reveal that the SnO2 films are polycrystalline at 350,400, 450, 500 ℃ with preferential orientation along the （200） and （101） planes, and amorphous at 300 ℃. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10^-2 Ω.cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.

关键词： tin oxide thin films spray ultrasonic structural properties optical properties

Optoelectronic properties of SnO2 thin films sprayed at different deposition times

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Chinese Physics B 2016年第4期25卷 296-302页

作者： Allag Abdelkrim Saad Rahmane Ouahab Abdelouahab Attouche Hafida Kouidri Nabila laboratoire de physique des couches minces et applications Universit de Biskra BP 145 RP 07000 Biskra Alg&ie

This article presents the elaboration of tin oxide （SnO2） thin films on glass substrates by using a home-made spray pyrolysis system. Effects of film thickness on the structural, optical, and electrical film properties are investigated. The films are characterized by several techniques such as x-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet- visible （UV-Vis） transmission, and four-probe point measurements, and the results suggest that the prepared films are uniform and well adherent to the substrates. X-ray diffraction （XRD） patterns show that SnO2 film is of polycrystal with cassiterite tetragonal crystal structure and a preferential orientation along the （110） plane. The calculated grain sizes are in a range from 32.93 nm to 56.88 nm. Optical transmittance spectra of the films show that their high transparency average transmittances are greater than 65% in the visible region. The optical gaps of SnO2 thin films are found to be in a range of 3.64 eV-3.94 eV. Figures of merit for SnO2 thin films reveal that their maximum value is about 1.15 x 10-4 Ω-1 at λ = 550 nm. Moreover, the measured electrical resistivity at room temperature is on the order of 10^-2 Ω.cm.

关键词： thin film SnO2 spray pyrolysis thickness properties

Effect of SnCl2 and SnCl4 precursors on SnSx thin films prepared by ultrasonic spray pyrolysis

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Journal of Semiconductors 2017年第6期38卷 18-23页

作者： Z.Hadef K.Kamli A.Attaf M.S.Aida B.Chouial laboratoire des Semi-Conducteurs Faculte des Sciences Universite Badji Mokhtar Annaba Algeria laboratoire de physique des couches minces et applications lpcma Universite de Biskra Algeria laboratoire de couches minces et Interfaces Faculte des Sciences Universite de Constantine Algeria

Thin films of SnSx,semiconductors,have been successfully synthesized by ultrasonic spray pyrolysis technique,using two precursors namely：tin（II）chloride and tin（IV）chloride,*** solutions were prepared by the dilution of different Sn molarities of the two precursors *** precursor molarities were varied from 0.04 to 0.07 mol/L,whereas that of S was fixed at 0.1 mol/*** present work focuses on the effect of the different precursor’s molarities on the nature and the properties of the prepared thin films in order to optimize the growth conditions.X-ray diffraction analysis reveals that the precursor’s molarities alter the grain size of the prepared films,which varied from 8 to 14 nm and from 12 to 16 nm,according to the used *** films analysis by SEM,shows that the SnS2 films are more dense and smooth than the SnS *** composition of the elements is analysed with an EDX spectrometer,and the obtained result for M（sn）=0：07 mol/L indicates that the atomic ratio of Sn to S is 51.57：48：43 and 36：64 for films synthesized from the first and second precursors *** measurements show that the conductivity behavior depends on the used precursors and their molarities.

关键词： precursors ultrasonic spray tin sulfide semiconductor thin films characterization

The calculation of band gap energy in zinc oxide films

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Journal of Semiconductors 2015年第1期36卷 17-22页

作者： Ali Arif Okba Belahssen Salim Gareh Said Benramache Electrical Engineering department Faculty of Technology University of Biskra Algeria laboratoire de physique des couches minces et applications (lpcma) Université de Biskra Algeria Mechanical Engineering department Faculty of Technology University of Biskra Algeria

We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor;the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis *** thin films were deposited at different substrate temperatures ranging between 200 and 500℃. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96–0.99999, indicating high quality representation of data based on Equation（2）, so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.

关键词： ZnO thin films semiconductor band gap energy correlation

Thermoluminescent response of gamma irradiated Na^(+)–Cu^(+) ionexchanged silicate glass in large dose range

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Nuclear Science and Techniques 2023年第5期34卷 22-32页

作者： Safa Toumi Khaled Farah laboratoire de Physico‑Chimie des Matériaux Département de PhysiqueFacultédes Sciences de MonastirUniversitéde MonastirMonastirTunisia Institut Supérieur du Transport et de la Logistique de Sousse Universitéde Sousse4023 SousseTunisia laboratoire de Recherche en Energie et Matière Développement des Sciences Nucléaires(LR16CNSTN02)Centre National des Sciences et Technologies Nucléaires2020 Sidi‑ThabetTunisia

The introduction of metals into vitreous matrices is the origin of various interesting phenomena;in particular,the presence of copper ions in glass has been the subject of considerable research because of its numerous *** ion-exchange process is primarily used to introduce copper ions into glass *** thermoluminescence(TL)of silicate glass was studied to evaluate its potential as gamma-sensitive material for dosimetric applications;the effect of copper doping on the thermoluminescent sensitivity was investigated using the Cu-Na ion-exchange technique for different concentrations and doping conditions,over a wide dose range of 10 mGy to 100 *** results showed that Cu doping significantly improved the sensitivity of the glasses to gamma *** the ion-exchange,two peaks appeared in the glow curves at approximately 175 and 230°C,respectively,which possibly originated from the Cu^(+) centers,along with a weak TL peak at around 320℃.We also attempted to explain the origin of the observed thermoluminescence by exploiting the Electron paramagnetic resonance(EPR)*** results clearly show quenching of the TL emission with increasing copper *** present work indicates that the thermoluminescence response of these glasses to gamma rays can be reasonably measured in the range of 0.001-100 *** study also facilitates the understanding of the basic TL mechanism in this glass system.

关键词： Cu-Na ion-exchange Silicate glass Thermoluminescence Gamma irradiation Electron paramagnetic resonance

A Simplified Numerical Study of the Kr/Cl_2 Plasma Chemistry in Dielectric Barrier Discharge

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Plasma Science and Technology 2013年第4期15卷 343-349页

作者： N.LARBI DAHO BACHIR A.BELASRI laboratoire de physique des plasmas mat'eriaux conducteurs et leurs applications LPPMCA Universit'e USTO'MBOran Algeria

In this paper, the generation of excimers and exciplexe radiation in mixtures of rare gas with halogen by homogeneous dielectric barrier discharge （DBD） is investigated. The typical characteristics of an excilamp based on KrCI＊ exciplexe molecules and the kinetic processes for the formation and the decay of this molecules in the Kr/Cl2 mixture are studied. The computer model developed is based on the Kr/Cl2 mixture chemistry, the equivalent electric circuit and the Boltzmann equations. The importance in the kinetic processes of some species such as the metastable state of Krypton （Kr＊（3P0,2）） and the negative ion of chloride （C1-） is considered. The results illustrate the time variations of charged species （ne, Kr＋, CI-, Cl＋, Cl＋, Kr＋）, excited atoms and molecules （Kr＊（3p0,2）, Kr＊（3P1）, Cl＊, Cl2）, the excimers （Kr, KrCl＊（B）, KrCI＊（C）, Kr2Cl＊） and the UV photon concentrations （in 222 nm, 235 nm, 258 nm and 325 nm range）. The effects of chlorine concentration and the total gas pressure in the Kr-Cl2 discharge on the electric parameters and radiation emissions are investigated.

关键词： rare gas kinetic homogenous discharge dielectric barrier discharge KrCl*excilamp