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Revealing the atomic mechanism of diamond–iron interfacial reaction

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Carbon Energy 2024年第3期6卷 255-263页

作者： Yalun Ku Kun Xu Longbin Yan Kuikui Zhang Dongsheng Song Xing Li Shunfang Li Shaobo Cheng Chongxin Shan Henan key laboratory of Diamond Optoelectronic materials and Devices Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhouChina Department of Mechanical Engineering Stanford UniversityStanfordCaliforniaUSA information materials and Intelligent Sensing laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationInstitutes of Physical Science and Information TechnologyAnhui UniversityHefeiChina Institute of Quantum materials and physics Henan Academy of SciencesZhengzhouChina

Diamond,with ultrahigh hardness,high wear resistance,high thermal conductivity,and so forth,has attracted worldwide ***,researchers found emergent reactions at the interfaces between diamond and ferrous materials,which significantly affects the performance of diamond-based ***,combing experiments and theoretical calculations,taking diamond–iron(Fe)interface as a prototype,the counter-diffusion mechanism of Fe/carbon atoms has been ***,it is identified that Fe and diamond first form a coherent interface,and then Fe atoms diffuse into diamond and prefer the carbon vacancies ***,the relaxed carbon atoms diffuse into the Fe lattice,forming Fe_(3)***,graphite is observed at the Fe_(3)C surface when Fe_(3)C is over-saturated by carbon *** present findings are expected to offer new insights into the atomic mechanism for diamondferrous material's interfacial reactions,benefiting diamond-based device applications.

关键词： coherent interface counter-diffusion diamond iron phase transition

Synthesis and optical properties of highly efficient Na_(3)KMg_(7)(PO_(4))_(6):Eu^(2+)blue phosphor for full-spectrum white-light-emitting diodes:The role of Li_(2)CO_(3)flux

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Journal of Rare Earths 2024年第7期42卷 1217-1223,I0001页

作者： Zihao Wang Sisi Liang Chenyang Zhan Kunyuan Xu Jie Hu Dejian Chen Liping Song Haomiao Zhu School of physics and materials Science Nanchang UniversityNanchang330000China Ganjiang Innovation Academy Chinese Academy of SciencesGanzhou341000China CAS key laboratory of Design and Assembly of functional Nanostructures and Fujian Key Laboratory of NanomaterialsFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002China Xiamen key laboratory of Rare Earth photoelectric functional materials Xiamen Research Center of Rare Earth MaterialsHaixi InstituteChinese Academy of SciencesXiamen361021China

Full-spectrum phosphor-converted white-light-emitting diodes(pc-WLED)are emerging as a mainstream technology in semiconductor ***,high-performance blue phosphor which can be excited efficiently by a 400 nm NUV diode chip is still ***,we present a blue-emitting Na_(3)KMg_(7)(PO_(4))6:Eu^(2+)phosphor synthesized by the solid-reaction ***,we find that the using of Li_(2)CO_(3)as flux can significantly improve the crystal quality and thus the emission efficiency of the ***,the excitation peak of the phosphor shifts from 365 to 400 nm,which is pivotal for efficient NUV(400 nm)diode chip *** practical Eu^(2+)concentration is also enhanced by using Li_(2)CO_(3)as flux,and the absorption efficiency is greatly *** phosphor exhibits superior PL thermal stability,namely retains 94%integrated photoluminescence intensity at 150℃of that at 25℃.As a result,the optimized phosphor shows an emission band peaked at 437 nm with a bandwidth of 40 nm and a high external photoluminescence quantum yield of 51.7%.Finally,a pc-WLED was fabricated by using NKMPO:Eu^(2+)blue,Sr_(2)SiO_(4):Eu^(2+)green,CaAlSiN_(3):Eu^(2+)red phosphors,and a 400 nm NUV diode *** shows a high color rendering index of R_(a)=96.4 and a correlated color temperature of 4358 *** results prove that NKMPO:Eu^(2+)is a promising blue phosphor for full-spectrum WLED based on NUV diode chips.

关键词： Eu^(2+) Blue phosphor Na_(3)KMg_(7)(PO_(4))_(6) Full-spectrum white LEDs Rare earths

Advancing microarray fabrication:One-pot synthesis and highresolution patterning of UV-crosslinkable perovskite quantum dots

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Nano Research 2024年第9期17卷 8600-8609页

作者： Linfeng Yuan Dejian Chen Kun He Jiamin Xu Kunyuan Xu Jie Hu Sisi Liang Haomiao Zhu CAS key laboratory of Design and Assembly of functional Nanostructures and Fujian Key Laboratory of Nanomaterials Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China Fujian Science&technology Innovation laboratory for Optoelectronic information of China Fuzhou 350108China University of Chinese Academy of sciences Beijing 100049China College of Chemistry and materials Science Fujian Normal UniversityFuzhou 350007China Xiamen key laboratory of Rare Earth photoelectric functional materials Xiamen Research Center of Rare Earth MaterialsHaixi InstituteChinese Academy of SciencesXiamen 361021China

The development of highly efficient,solution-processable,and environmentally stable perovskite quantum dots(PQDs)is crucial for their accurate high-resolution patterning and subsequently enabling the practical deployment of PQD based emissive display *** study presents an innovative strategy for integrating all-inorganic PQDs and ultraviolet(UV)crosslinkable acrylate polymer at a structural and functional *** achievement is accomplished by meticulous design and one-pot synthesis of UV-crosslinkable CsPbX3(X=Cl,Br,I)PQDs solution,which exhibit outstanding environmental *** the solution-processable characteristics of the resulting UV-crosslinkable PQDs,precise patterning of high-resolution(2μm,7608 pixels·in.-1)and colorful PQDs microarrays can be readily achieved through inkjet printing and high-throughput photolithography(~2μm in pitch line/space patterning).The UV cross-linked process guarantees a homogeneous distribution of PQDs,effectively mitigating coffee ring effect and improving the overall quality of stereoscopic *** photo-cured PQDs film,which undergoes free radical photopolymerization,displays an impressive photoluminescence quantum yield(PL QY)of up to 89.2%,reaching 98%of the value observed in the solution *** approach outlined in this research is both cost-effective and pragmatic,exhibiting tremendous promise for diverse system-level integrated optoelectronic devices,such as ultra-high-resolution micro-light-emitting device(micro-LED)displays.

关键词： perovskite quantum dots microarrays cross-linking strategy Inkjet printing photolithography

Efficient Spin-Flip between Charge-Transfer States for High-Performance Electroluminescence, without an Intermediate Locally Excited State

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Research 2024年第1期2023卷 339-349页

作者： Donghai Zhang Shanshan Jiang Xiaodong Tao Fulin Lin Lingyi Meng Xu-Lin Chen Can-Zhong Lu State key laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian 350002China Fujian Science and technology Innovation laboratory for Optoelectronic information of China FuzhouFujian 350108China Xiamen key laboratory of Rare Earth photoelectric functional materials Xiamen Institute of Rare Earth MaterialsHaixi InstitutesChinese Academy of SciencesXiamenFujian 361021China University of Chinese Academy of sciences Beijing 100049China

Thermally activated delayed fluorescence(TADF)materials with both high photoluminescence quantum yield(PLQY)and fast reverse intersystem crossing(RISC)are strongly desired to realize efficient and stable organic light-emitting diodes(OLEDs).Control of excited-state dynamics via molecular design plays a central role in optimizing the PLQY and RISC rate of TADF materials but remains ***,3 TADF emitters possessing similar molecular structures,similar high PLQYs(89.5%to 96.3%),and approximate energy levels of the lowest excited singlet states(S_(1)),but significantly different spin-flipping RISC rates(0.03×10^(6) s^(−1) vs.2.26×10^(6) s^(−1))and exciton lifetime(297.1 to 332.8μs vs.6.0μs)were systematically synthesized to deeply investigate the feasibility of spin-flip between charge-transfer excited states(^(3)CT–^(1)CT)transition.

关键词： transition lifetime desired

X-ray-activated Bi^(3+)/Pr^(3+)co-doped LiYGeO_4 phosphor with UV and NIR dual-emissive persistent luminescence

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Journal of Rare Earths 2024年第5期42卷 955-961,I0005页

作者： Xianggui Yin Hongyun Zhong Lin Liu Junpeng Shi Xia Sun Yun Zhang State key laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002China Xiamen key laboratory of Rare Earth photoelectric functional materials Xiamen Institute of Rare Earth MaterialsHaixi InstituteChinese Academy of SciencesXiamen361021China Fujian Science and technology Innovation laboratory for Optoelectronic information of China Fuzhou350108China

X-ray-activated luminescence materials have broad application prospects in photodynamic therapy of deep *** them,X-ray-activated persistent luminescence materials(PLMs)exhibiting multiple emission peaks have drawn extensive attention for the ir capacity to achieve a combination of bioimaging and therapeutic ***,we developed a novel PLM,LiYGeO_4:Bi^(3+),Pr^(3+),that simultaneously exhibits UV and NIR dual persistent luminescence(PersL)emissions after irradiation by *** material can be re peatedly excited by X-ray and emits similar lumine scence intensity every time,which shows good PersL *** addition,LiYGeO_4:Bi^(3+),Pr^(3+)exhibits photostimulated PersL properties by stimulation with a red light-emitting diode(LED)or NIR laser after long-term *** work provides a new choice of X-ray-excited PLMs with UV and NIR dual emission and the novel phosphor shows promise as a potential candidate for the integration of treatment and diagnosis of deep tumors.

关键词： Co-doping X-ray-activated Dual emissions Persistent luminescence Rare earths

Superconducting state in Ba_((1-x)) Sr_(x)Ni_(2)As_(2) near the quantum critical point

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Chinese physics B 2024年第6期33卷 488-493页

作者：余承峰张宗源宋林兴吴彦玮袁小秋侯杰涂玉兵侯兴元李世亮单磊 information materials and Intelligent Sensing laboratory of Anhui Province Institutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China key laboratory of Structure and functional Regulation of Hybrid materials(Anhui University) Ministry of EducationHefei 230601China Beijing National laboratory for Condensed Matter physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical sciences University of Chinese Academy of SciencesBeijing 100190China Songshan Lake materials laboratory Dongguan 523808China

In the phase diagram of the nickel-based superconductor Ba_(1-x)Sr_(x)Ni_(2)As_(2),T_(C) has been found to be enhanced sixfold near the quantum critical point(QCP) x=0.71 compared with the parent ***,the mechanism is still under ***,we report a detailed investigation of the superconducting properties near the QCP(x≈0.7) by utilizing scanning tunneling microscopy and *** temperature-dependent superconducting gap and magnetic vortex state were obtained and analyzed in the framework of the Bardeen-Cooper-Schrieffer *** ideal isotropic s-wave superconducting gap excludes the long-speculated nematic fluctuations while preferring strong electron-phonon coupling as the mechanism for T_(C) enhancement near the *** lower than expected gap ratio of Δ/(k_(B) T_(C)) is rooted in the fact that Ba_(1-x)Sr_(x)Ni_(2)As_(2) falls into the dirty limit with a serious pair breaking effect similar to the parent compound.

关键词： nickel-based superconductor electron–phonon coupling dirty limit scanning tunneling microscopy/spectroscopy

Pressure-induced magnetic phase and structural transition in SmSb2

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Chinese physics B 2024年第6期33卷 484-489页

作者：李涛王舒阳陈绪亮陈春华房勇杨昭荣 Science Island Branch of Graduate School University of Science and Technology of China Anhui key laboratory of Low-Energy Quantum materials and Devices High Magnetic Field LaboratoryHFIPS Chinese Academy of Sciences Jiangsu laboratory of Advanced functional materials Department of Physics Changshu Institute of Technology Institutes of Physical Science and information technology Anhui University Collaborative Innovation Center of Advanced Microstructures

Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb2,here we present a high-pressure study of an isostructural antiferromagnetic（AFM） SmSb2through electrical transport and synchrotron x-ray diffraction *** PC～2.5 GPa,we found a pressure-induced magnetic phase transition accompanied by a Cmca→P4/nmm structural phase *** the pristine AFM phase below PC,the AFM transition temperature of SmSb2is insensitive to pressure;in the emergent magnetic phase above PC,however,the magnetic critical temperature increases rapidly with increasing *** addition,at ambient pressure,the magnetoresistivity（MR） of SmSb2increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2 *** increasing pressure above PC,the MR behavior remains similar to that observed at ambient pressure,both in terms of temperature-and field-dependent *** leads us to argue an AFM-like state for SmSb2above *** the investigated pressure of up to 45.3 GPa and the temperature of down to 1.8 K,we found no signature of superconductivity in SmSb2.

关键词： high pressure antiferromagnet magnetoresistivity structural transition

High-Efficiency Photo-Induced Charge Transfer for SERS Sensing in N-Doped 3D-Graphene on Si Heterojunction

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Energy & Environmental materials 2024年第2期7卷 272-280页

作者： Guanglin Zhang Jie Sun Genwang Wei Shan Zhang Zhengyi He Huijuan Wu Bingkun Wang Siwei Yang Guqiao Ding Zhiduo Liu Zhiwen Jin Caichao Ye Gang Wang Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Department of Biochemistry and Molecular Biology School of Basic Medical Sciences Shenzhen University Academy for Advanced Interdisciplinary Studies & Department of materials Science and Engineering Guangdong Provincial Key Laboratory of Computational Science and Material Design Southern University of Science and Technology State key laboratory of functional materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Centre for Quantum physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology School of Physical Science and technology & key laboratory for Magnetism and Magnetic materials of the Ministry of Education Lanzhou University

Nitrogen-doped three-dimensional graphene（N-doped 3D-graphene） is a graphene derivative with excellent adsorption capacity, large specific surface area, high porosity, and optoelectronic properties. Herein, N-doped 3Dgraphene/Si heterojunctions were grown in situ directly on silicon（Si）substrates via plasma-assisted chemical vapor deposition（PACVD）, which is promising for surface-enhanced Raman scattering（SERS） substrates candidates. Combined analyses of theoretical simulation, incorporating N atoms in 3D-graphene are beneficial to increase the electronic state density of the system and enhance the charge transfer between the substrate and the target molecules. The enhancement of the optical and electric fields benefits from the stronger light-matter interaction improved by the natural nano-resonator structure of N-doped 3D-graphene. The as-prepared SERS substrates based on N-doped 3D-graphene/Si heterojunctions achieve ultralow detection for various molecules: 10-8M for methylene blue（MB） and10-9M for crystal violet（CRV） with rhodamine（R6G） of 10-10M. In practical detected, 10-8M thiram was precisely detected in apple peel extract. The results indicate that N-doped 3D-graphene/Si heterojunctions based-SERS substrates have promising applications in low-concentration molecular detection and food safety.

关键词： charge transfer DFT simulation N-doped 3D-graphene SERS Thiram detection

Performance optimization of the neutron-sensitive image intensifier used in neutron imaging

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Chinese physics B 2024年第8期33卷 380-387页

作者：谭金昊宋玉收周健荣杨文钦蒋兴奋刘杰张超月周晓娟夏远光刘术林闫保军刘辉王松林赵豫斌庄建孙志嘉陈元柏 Harbin Engineering University Harbin 150000China Spallation Neutron Source Science Center Dongguan 523803China State key laboratory of Particle Detection and Electronics Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China key laboratory of China Building materials Industry for Special photoelectric materials Institute of Special Glass Fiber and Optoelectronic Functional MaterialsChina Building Materials AcademyBeijing 100024China

As a non-destructive testing technology,neutron imaging plays an important role in various fields,including material science,nuclear engineering,and fundamental *** imaging detector with a neutron-sensitive image intensifier has been developed and demonstrated to achieve good spatial resolution and timing ***,the influence of the working voltage on the performance of the neutron-sensitive imaging intensifier has not been *** optimize the performance of the neutron-sensitive image intensifier at different voltages,experiments have been performed at the China Spallation Neutron Source(CSNS)neutron *** change in the light yield and imaging quality with different voltages has been *** is shown that the image quality benefits from the high gain of the microchannel plate(MCP)and the high accelerating electric field between the MCP and the *** the accelerating electric field is more effective than increasing the gain of MCPs for the improvement of the imaging *** the total gain of the MCP stack can be realized more effectively by improving the gain of the standard MCP than that of the n *** results offer a development direction for image intensifiers in the future.

关键词： neutron detector neutron imaging microchannel plate image intensifier