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A sub-1-dB noise figure monolithic GNSS LNA

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Journal of Semiconductors 2013年第9期34卷 149-153页

作者：周仁杰项勇王虹甘业兵钱敏马成炎叶甜春 Institute of microelectronics Chinese Academy of Sciences Hangzhou Zhongke microelectronics co. ltd. jiaxing lianxing microelectronics co. ltd.

A monolithic integrated low noise amplifier （LNA） based on a SiGe H/3T process tbr a global nawgatlon satellite system （GNSS） is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of -6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600 x 650 μmz die area.

关键词： LNA GNSS monolithic integrated SiGe HBT

Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

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Journal of Semiconductors 2015年第3期36卷 85-87页

作者：田晓丽陆江滕渊张文亮卢烁今朱阳军 Institute of microelectronics Chinese Academy of Sciences Shanghai lianxing Electronics co. Ltd

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N^＋ buffer layer, the other is decreasing the implant dose of the P^＋ collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.

关键词： avalanche breakdown snap back bipolar transistor gain high voltage IGBT

In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity

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Plasma Science and Technology 2014年第3期16卷 239-243页

作者：饶志鹏万军李超波陈波刘键黄成强夏洋 Key Laboratory of microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences jiaxing Research and commercialization Center for microelectronics Equipment jiaxing Kemin Electronic Equipment & Technologies co. LTD

In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectroscopy （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425-550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process.

关键词： plasma-enhanced atomic layer deposition in-situ nitrogen plasma N-dopedTiO2 photocatalyst

Synthesis and electromagnetic transport of large-area 2D WTe_(2) thin film

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Journal of Semiconductors 2022年第10期43卷 50-55页

作者： Yumeng Zhang Zhejia Wang Jiaheng Feng Shuaiqiang Ming Furong Qu Yang Xia Meng He Zhimin Hu Jing Wang Institute of microelectronics of the Chinese Academy of Sciences Beijing100029China University of Chinese Academy of Sciences Beijing100049China jiaxing microelectronics Instrument and Equipment Engineering Center of the Chinese Academy of Sciences Jiaxing 314000China jiaxing Kemin Electronic Equipment Technology co. Ltd.Jiaxing 314000China Institute of Physics of the Chinese Academy of Sciences Beijing100190China

Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer de-position and chemical vapor deposition technology,and the effects of different tellurization temperatures on the properties of tungsten telluride films were *** growth rate,crystal structure and composition of the film samples were character-ized and analyzed by using scanning electron microscope,Raman spectroscopy and X-ray photoelectron *** res-ults showed that tungsten telluride thin films with good crystal orientation in(001)were obtained at telluride temperature of 550℃.When the telluride temperature reached 570℃,the tungsten telluride began to decompose and unsaturated mag-netoresistance was found.

关键词： atomic layer deposition(ALD) chemical vapor deposition(CVD) telluride temperature WTe_(2)thin film

Dehydroxylation action on surface of TiO_2 films restrained by nitrogen carrier gas during atomic layer deposition process

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Rare Metals 2014年第5期33卷 583-586页

作者： Zhi-Peng Rao Bang-Wu Liu Chao-Bo Li Yang Xia Jun Wan Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences jiaxing Research and commercialization Center for microelectronics Equipment Zhejiang Institute of Advanced Technology Chinese Academy of Sciences jiaxing Kemin Electronic Equipment & Technologies co. LtdZhejiang Institute of Advanced Technology Chinese Academy of Sciences

A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition（ALD） was investigated by X-ray photoelectron spectroscopy（XPS）, contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.

关键词： Atomic layer deposition TiO2 N2 Surface hydroxyl groups XPS Reaction model

contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

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Journal of Materials Science & Technology 2023年第2期133卷 230-237页

作者： Ling Tong Xiaojiao Guo Zhangfeng Shen Lihui Zhou Jingyi Ma Xinyu Chen Honglei Chen Yin Xia Chuming Sheng Saifei Gou Die Wang Xinyu Wang Xiangqi Dong Yuxuan Zhu Xinzhi Zhang David Wei Zhang Sheng Dai Xi Li Peng Zhou Yangang Wang Wenzhong Bao State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China college of Biological Chemical Science and EngineeringJiaxing UniversityJiaxing 314001China Key Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center Institute of Fine ChemicalsSchool of Chemistry&Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China State Key Laboratory of Surface Physics and Department of Physics Fudan UniversityShanghai 200433China

Two-dimensional(2D)semiconductors can be utilized to continually miniaturize nanoscale electronic ***,achieving a practical solution for satisfying electrical contact with 2D semiconductors remains *** this study,we developed a novel contact structure with transferred multilayer(t-ML)MoS 2 by integrating both edge and top *** in-situ plasma treatment for the edge of the MoS 2 channel and successive metal deposition,we achieved 16 times lower contact resistivity(22.8 kΩμm)than that of the top contacted *** thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS 2 due to the alleviated current-crowding effect re-sulting from the small contact *** temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling ***,the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport *** work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors,paving the way for future large-scale 2D electronic devices.

关键词： Edge contact 2D materials Field-effect transistors Schottky barrier contact resistance

In vitro corrosion resistance of a Ta2O5 nanofilm on MAO coated magnesium alloy AZ31 by atomic layer deposition

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Bioactive Materials 2020年第1期5卷 34-43页

作者： Chang-Yang Li Chi Yu Rong-Chang Zeng Bo-Cheng Zhang Lan-Yue Cui Jun Wan Yang Xia corrosion Laboratory for Light Metals College of Materials Science and EngineeringShandong University of Science and TechnologyQingdao266590China jiaxing microelectronics Engineering Center Chinese Academy of SciencesJiaxing314022China Institute of microelectronics Chinese Academy of SciencesBeijing100029China School of Materials Science and Engineering Zhengzhou UniversityZhengzhou450002China

Micro-arc oxidation(MAO)coating with outstanding adhesion strength to Mg alloys has attracted more and more ***,owing to the porous structure,aggressive ions easily invaded the MAO/substrate interface through the through pores,limiting long-term corrosion ***,a dense and biocompatible tantalum oxide(Ta2O5)nanofilm was deposited on MAO coated Mg alloy AZ31 through atomic layer deposition(ALD)technique to seal the micropores and regulate the degradation *** micrography,chemical compositions and crystallographic structure were characterized using FE-SEM,EDS,XPS and *** corrosion resistance of all samples was evaluated through electrochemical and hydrogen evolution *** revealed that the Ta2O5 film mainly existed in the form of ***,uniform deposition of Ta2O5 film and effective sealing of micropores and microcracks in MAO coating were *** current density(icorr)of the composite coating decreased three orders of magnitude than that of the substrate and MAO coating,improving corrosion ***,the formation and corrosion resistance mechanisms of the composite coating were proposed.

关键词： Magnesium alloys Micro-arc oxidation Atomic layer deposition coatings

Sensitive MoS_(2)photodetector cell with high air-stability for multifunctional in-sensor computing

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Chip 2022年第3期1卷 61-68页

作者： Dong-Hui Zhao Zheng-Hao Gu Tian-Yu Wang Xiao-Jiao Guo Xi-Xi Jiang Min Zhang Hao Zhu Lin Chen Qing-Qing Sun David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innova-tion Center Shanghai 201203China college of Data Science Jiaxing Univer-sityJiaxing City 314001China

With the development of artificial intelligence and the Internet of Things,the number of sensory nodes is growing rapidly,leading to the exchange of large quantities of redundant data between sensors and computing *** computing schemes,which integrate sensing and processing,have provided a promising route to addressing the sensing/processing bottleneck by reducing power consumption,time delay and hardware *** this study,an in-sensor computing architecture involving a photoelectronic cell based on a wafer-scale two-dimensional MoS_(2)thin film was *** MoS_(2)photodetector cell used a top-gate device structure with in-dium tin oxide(ITO)as the transparent gate electrode,which exhibited high air-stability and a high photoresponsivity(R)up to 555.8 A W^(-1) at an illumination power density(P_(in))of 16.0μW cm^(-2)(λ=500 nm).Additionally,a MoS_(2)photodetector array with uniform photoresponsive characteristics was ***,logic gates,including inverter,NAND,and NOR,were achieved based on MoS_(2)photodetector *** multifunctional and robust in-sensor computing was ascribed to the uniform wafer-scale MoS_(2)film grown by atomic layer deposition(ALD)and the unique device *** the detection of optical signals and logic operations were achieved through MoS_(2)photodetector cells with area efficiency,the proposed in-sensor computing device paves the way for potential applications in high-performance,integrated sensing and processing systems.

关键词： In-sensor computing Photodetectors MoS_(2) Atomic layer de-position Transparent electrode

Surface plasmon assisted high-performance photodetectors based on hybrid TiO_(2)@GaO_(x)N_(y)-Ag heterostructure

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Journal of Semiconductors 2023年第7期44卷 45-53页

作者： Jiajia Tao Guang Zeng Xiaoxi Li Yang Gu Wenjun Liu David Wei Zhang Hongliang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics&SystemsSchool of MicroelectronicsFudan Univer-sityShanghai 200433China Jiashan Fudan Institute Jiaxing 314100China

In this work,we reported a high-performance-based ultraviolet-visible(UV-VIS)photodetector based on a TiO_(2)@GaO_(x)N_(y)-Ag *** particles were introduced into TiO_(2)@GaO_(x)N_(y)to enhance the visible light detection perfor-mance of the heterojunction *** 380 nm,the responsivity and detectivity of TiO_(2)@GaO_(x)N_(y)-Ag were 0.94 A/W and 4.79×109 Jones,respectively,and they increased to 2.86 A/W and 7.96×1010 Jones at 580 *** rise and fall times of the response were 0.19/0.23 and 0.50/0.57 s,***,at 580 nm,the responsivity of fabricated devices is one to four orders of magnitude higher than that of the photodetectors based on TiO_(2),Ga_(2)O_(3),and other *** excellent optoelectronic characteristics of the TiO_(2)@GaO_(x)N_(y)-Ag heterojunction device could be mainly attributed to the synergistic effect of the type-Ⅱband structure of the metal-semiconductor-metal heterojunction and the plasmon resonance effect of Ag,which not only effectively promotes the separation of photogenerated carriers but also reduces the recombination *** is fur-ther illuminated by finite difference time domain method(FDTD)simulation and photoelectric *** TiO_(2)@GaO_(x)N_(y)-Ag arrays with high-efficiency detection are suitable candidates for applications in energy-saving communica-tion,imaging,and sensing networks.

关键词： TiO_(2)@GaO_(x)N_(y)-Ag ultraviolet-visible photodetector type-Ⅱband structure plasmon resonance effect