A sub-1-dB noise figure monolithic GNSS LNA

作     者：周仁杰 项勇 王虹 甘业兵 钱敏 马成炎 叶甜春 

作者机构：Institute of MicroelectronicsChinese Academy of Sciences Hangzhou Zhongke Microelectronics Co. Ltd. Jiaxing Lianxing Microelectronics Co. Ltd. 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第9期

页      面：149-153页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 081105[工学-导航、制导与控制] 0804[工学-仪器科学与技术] 0825[工学-航空宇航科学与技术] 0811[工学-控制科学与工程] 

主　　题：LNA GNSS monolithic integrated SiGe HBT 

摘      要：A monolithic integrated low noise amplifier （LNA） based on a SiGe H/3T process tbr a global nawgatlon satellite system （GNSS） is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of -6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600 x 650 μmz die area.