检索结果-南通市图书馆

A high linearity SiGe HBT LNA for GPS receiver

在线全文

学校读者我要写书评

暂无评论

Journal of Semico.ductors 2014年第4期35卷 92-97页

作者：罗彦彬石坚马成炎甘业兵钱敏 Institute of microelectronics Chinese Academy of Sciences Hangzhou Zhongke microelectronics co.ltd. jiaxing lianxing microelectronics co.ltd.

A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar casco.ed with an MOSFET LNA was fabricated in a co.mercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and co.pression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB co.pression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and co.sumes 3.6 mA from a 2.85 V power supply.

关键词： LNA noise figure high linearity OPldB IIP3 SiGe HBT

Backside optimization for improving avalanche breakdown behavior of 4.5 kV IGBT

在线全文

学校读者我要写书评

暂无评论

Journal of Semico.ductors 2015年第3期36卷 85-87页

作者：田晓丽陆江滕渊张文亮卢烁今朱阳军 Institute of microelectronics Chinese Academy of Sciences Shanghai lianxing Electronics co. Ltd

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and co.pared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N^＋ buffer layer, the other is decreasing the implant dose of the P^＋ co.lector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.

关键词： avalanche breakdown snap back bipolar transistor gain high voltage IGBT

In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity

在线全文

学校读者我要写书评

暂无评论

Plasma Science and Technology 2014年第3期16卷 239-243页

作者：饶志鹏万军李超波陈波刘键黄成强夏洋 Key Laboratory of microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences jiaxing Research and co.mercialization Center for microelectronics Equipment jiaxing Kemin Electronic Equipment & Technologies co. LTD

In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectrosco.y （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425-550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested acco.ding to the XPS results and the typical atomic layer deposition process.

关键词： plasma-enhanced atomic layer deposition in-situ nitrogen plasma N-dopedTiO2 photocatalyst

Synthesis and electromagnetic transport of large-area 2D WTe_(2) thin film

在线全文

学校读者我要写书评

暂无评论

Journal of Semico.ductors 2022年第10期43卷 50-55页

作者： Yumeng Zhang Zhejia Wang Jiaheng Feng Shuaiqiang Ming Furong Qu Yang Xia Meng He Zhimin Hu Jing Wang Institute of microelectronics of the Chinese Academy of Sciences Beijing100029China University of Chinese Academy of Sciences Beijing100049China jiaxing microelectronics Instrument and Equipment Engineering Center of the Chinese Academy of Sciences Jiaxing 314000China jiaxing Kemin Electronic Equipment Technology co. Ltd.Jiaxing 314000China Institute of Physics of the Chinese Academy of Sciences Beijing100190China

Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer de-position and chemical vapor deposition technology,and the effects of different tellurization temperatures on the properties of tungsten telluride films were *** growth rate,crystal structure and co.position of the film samples were character-ized and analyzed by using scanning electron microsco.e,Raman spectrosco.y and X-ray photoelectron *** res-ults showed that tungsten telluride thin films with good crystal orientation in(001)were obtained at telluride temperature of 550℃.When the telluride temperature reached 570℃,the tungsten telluride began to deco.pose and unsaturated mag-netoresistance was found.

关键词： atomic layer deposition(ALD) chemical vapor deposition(CVD) telluride temperature WTe_(2)thin film

Dehydroxylation action on surface of TiO_2 films restrained by nitrogen carrier gas during atomic layer deposition process

在线全文

学校读者我要写书评

暂无评论

Rare Metals 2014年第5期33卷 583-586页

作者： Zhi-Peng Rao Bang-Wu Liu Chao-Bo Li Yang Xia Jun Wan Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences jiaxing Research and co.mercialization Center for microelectronics Equipment Zhejiang Institute of Advanced Technology Chinese Academy of Sciences jiaxing Kemin Electronic Equipment & Technologies co. LtdZhejiang Institute of Advanced Technology Chinese Academy of Sciences

A strong influence of nitrogen gas on the co.tent of surface hydroxyl groups of TiO2 films by atomic layer deposition（ALD） was investigated by X-ray photoelectron spectrosco.y（XPS）, co.tact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the co.tent of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water co.tact angles and optical reflection spectra show that the co.tent variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.

关键词： Atomic layer deposition TiO2 N2 Surface hydroxyl groups XPS Reaction model