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Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS

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Journal of Semiconductors 2010年第12期31卷 49-53页

作者：韩雁张斌丁扣宝张世峰韩成功胡佳贤朱大中 institute of Microelectronics & photoelectronics Zhejiang University

The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS （SG-NLDMOS） transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift （NDD） region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS （UG-NLDMOS） transistors.

关键词： SG-NLDMOS Ron degradation charge-pumping interface state positive oxide-trapped charge

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

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Chinese Physics Letters 2006年第8期23卷 2259-2261页

作者：徐传明孙云周琳李凤岩张力薛玉明周志强何青 institute of photoelectronics Nankai University Tianjin 300071

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.

关键词： CUINSE2 LAYERS MORPHOLOGY DIFFUSION PRESSURE

Off-state avalanche breakdown induced degradation in 20 V NLDMOS devices

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Journal of Semiconductors 2010年第9期31卷 37-40页

作者：张世锋丁扣宝韩雁韩成功胡佳贤张斌 institute of Microelectronics & photoelectronics Zhejiang University

Degradation behaviors of 20 V NLDMOS operated under off-state avalanche breakdown conditions are presented.A constant current pulse stressing test is applied to the *** different degradation mechanisms are identified by analysis of electrical data,technology computer-aided design（TCAD） simulations and charge pumping *** first mechanism is attributed to positive oxide-trapped charges in the N-type drift region,and the second one is due to decreased electron mobility upon interface state formation in the drift *** of the mechanisms are enhanced with increasing avalanche breakdown current.

关键词： NLDMOS avalanche breakdown degradation charge-pumping

Design and FPGA verification of a novel reliable real-time data transfer system

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Journal of Zhejiang University-Science A(Applied Physics & Engineering) 2008年第10期9卷 1406-1410页

作者： Yu-ping LIAN Yan HAN Ming-xu HUO Jin-long CHEN Yan ZHANG institute of Microelectronics and photoelectronics Zhejiang University Hangzhou 310027 China

Considering the increasing use of information technology with established standards, such as TCP/IP and XML in modem industrial automation, we present a high cost performance solution with FPGA （field programmable gate array） implementation of a novel reliable real-time data transfer system based on EPA （Ethemet for plant automation） protocol and IEEE 1588 standard. This combination can provide more predictable and real-time communication between automation equipments and precise synchronization between devices. The designed EPA system has been verified on Xilinx Spartan3 XC3S1500 and it consumed 75% of the total slices. The experimental results show that the novel industrial control system achieves high synchronization precision and provides a 1.59-ps standard deviation between the master device and the slave ones. Such a real-time data transfer system is an excellent candidate for automation equipments which require precise synchronization based on Ethemet at a comparatively low price.

关键词： Ethemet for plant automation (EPA) IEEE 1588 Precise synchronization Real-time data transfer

A 65-nm low-noise low-costΣ△modulator for audio applications

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Journal of Semiconductors 2012年第2期33卷 82-86页

作者： Liang Guo Liao Lu Luo Hao Liu Xiaopeng Han Xiaoxia Han Yan institute of Microelectronics&photoelectronics Zhejiang UniversityHangzhou 310027China

This paper introduces a low-noise low-costΣA modulator for digital audio analog-to-digital conversion. By adopting a low-noise large-output swing operation amplifier,not only is the flicker noise greatly inhibited,but also the power consumption is *** the area cost is relatively *** modulator was implemented in a SMIC standard 65-nm CMOS *** results show it can achieve 96 dB peak signal-to-noise plus distortion ratio（SNDR） and 105 dB dynamic range（DR） over the 22.05-kHz audio band and occupies 0.16 mm^2. The power consumption of the proposed modulator is 4.9 mW from a 2.5 V power supply,which is suitable for high-performance,low-cost audio codec applications.

关键词： Σ△modulator low-noise low-cost analog-to-digital converter

Optimized design and experiment of one-dimensional omnidirectional reflector using P-wave angle domain compensated overlapping method

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Chinese Optics Letters 2007年第11期5卷 665-667页

作者：李夏薛唯蒋玉蓉王华清喻志农 Department of photoelectronics Engineering School of Information Science and Technology Beijing Institute of TechnologyBeijing 100081

The optimized method of extending the omni-photonic band gap （omni-PBG） was discussed based on analyzing the P-wave reflectivity characteristics in one-dimensional （1D） periodic multilayer film. A visible omnidirectional reflector with hybrid structure was designed using P-wave compensated overlapping in angle domain. The experimental result was in good agreement with the theoretical simulation.

关键词： Light reflection Multilayer films One dimensional Optimization Photonic band gap

An integrated driving circuit implemented with p-type LTPS TFTs for AMOLED

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Optoelectronics Letters 2009年第2期5卷 104-107页

作者：赵丽晴吴春亚郝大收姚颖孟志国熊绍珍 institute of photoelectronics Nankai UniversityTianjin 300071 China

Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro- posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the paramete...

关键词： Polysilicon Semiconducting silicon compounds Shift registers

Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

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Chinese Physics B 2009年第8期18卷 3563-3567页

作者：韩晓艳侯国付张晓丹魏长春李贵君张德坤陈新亮孙健张建军赵颖耿新华 institute of photoelectronics Thin Film Devices and Technique of Nankai University Key Laboratory of photoelectronics Thin Film Devices and Technique of Tianjin Key Laboratory of Optoelectronic Information Science and Technology Ministry of Education

This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-highfrequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μc-Si：H layers were prepared by using a different total gas flow rate （Ftotal）, behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of - 1.0 nm/s. The influence of Ftotal on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μc-Si：H thin films were improved with increasing Ftotal. The variation of the microstructure was regarded as the main reason for the difference of the J V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With Ftotal of 300 sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5 A/s （1 A=0.1 nm）.

关键词： microcrystalline silicon high rate solar cell total gas flow rate

An 18-bit high performance audio ∑-△D/A converter

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Journal of Semiconductors 2010年第7期31卷 79-84页

作者：张昊黄小伟韩雁张泽松韩晓霞王昊梁国 institute of Microelectronics and photoelectronics Zhejiang University CISD Institute of Microelectronic CAD Department of Electronic Engineering City University of Hong Kong

A multi-bit quantized high performance sigma-delta（Σ-Δ） audio DAC is *** to its singlebit counterpart,the multi-bit quantization offers many advantages,such as simplerΣ-Δmodulator circuit,lower clock frequency and smaller spurious *** the data weighted average（DWA） mismatch shaping algorithm,element mismatch errors induced by multi-bit quantization can be pushed out of the signal band,hence the noise floor inside the signal band is greatly *** cope with the crosstalk between digital and analog circuits,every analog component is surrounded by a guard ring,which is an innovative *** 18-bit DAC with the above techniques,which is implemented in a 0.18μm mixed-signal CMOS process,occupies a core area of 1.86 mm^*** measured dynamic range（DR） and peak SNDR are 96 dB and 88 dB,respectively.

关键词： digital-to-analog converter Σ-Δmodulator multi-bit quantization switched-capacitor